RF Power Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED PACKAGE-2
| 参数名称 | 属性值 |
| 是否无铅 | 不含铅 |
| 是否Rohs认证 | 符合 |
| 包装说明 | HERMETIC SEALED PACKAGE-2 |
| 针数 | 2 |
| Reach Compliance Code | compliant |
| 配置 | SINGLE |
| FET 技术 | METAL SEMICONDUCTOR |
| 最高频带 | K BAND |
| JESD-30 代码 | S-CDFM-F2 |
| JESD-609代码 | e4 |
| 湿度敏感等级 | 1 |
| 元件数量 | 1 |
| 端子数量 | 2 |
| 工作模式 | DEPLETION MODE |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
| 封装形状 | SQUARE |
| 封装形式 | FLANGE MOUNT |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 极性/信道类型 | N-CHANNEL |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子面层 | Gold (Au) |
| 端子形式 | FLAT |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 晶体管应用 | AMPLIFIER |
| 晶体管元件材料 | GALLIUM ARSENIDE |
| Base Number Matches | 1 |
| MWT-371 | MWT-3 | MWT-373 | MWT-370 | |
|---|---|---|---|---|
| 描述 | RF Power Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED PACKAGE-2 | RF Power Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, DIE-3 | RF Power Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, | RF Power Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED PACKAGE-4 |
| Reach Compliance Code | compliant | compliant | compliant | compliant |
| 配置 | SINGLE | SINGLE | SINGLE | SINGLE |
| FET 技术 | METAL SEMICONDUCTOR | METAL SEMICONDUCTOR | METAL SEMICONDUCTOR | METAL SEMICONDUCTOR |
| 最高频带 | K BAND | K BAND | K BAND | K BAND |
| JESD-30 代码 | S-CDFM-F2 | R-XUUC-N3 | X-CXMW-F4 | S-CQMW-F4 |
| 元件数量 | 1 | 1 | 1 | 1 |
| 端子数量 | 2 | 3 | 4 | 4 |
| 工作模式 | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED | UNSPECIFIED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
| 封装形状 | SQUARE | RECTANGULAR | UNSPECIFIED | SQUARE |
| 封装形式 | FLANGE MOUNT | UNCASED CHIP | MICROWAVE | MICROWAVE |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | YES | YES | YES | YES |
| 端子形式 | FLAT | NO LEAD | FLAT | FLAT |
| 端子位置 | DUAL | UPPER | UNSPECIFIED | QUAD |
| 晶体管应用 | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
| 晶体管元件材料 | GALLIUM ARSENIDE | GALLIUM ARSENIDE | GALLIUM ARSENIDE | GALLIUM ARSENIDE |
| 是否无铅 | 不含铅 | - | 不含铅 | 不含铅 |
| 是否Rohs认证 | 符合 | - | 符合 | 符合 |
| 包装说明 | HERMETIC SEALED PACKAGE-2 | DIE-3 | - | HERMETIC SEALED PACKAGE-4 |
| 针数 | 2 | 3 | - | 4 |
| JESD-609代码 | e4 | - | e4 | e4 |
| 湿度敏感等级 | 1 | - | 2 | 1 |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED |
| 端子面层 | Gold (Au) | - | Gold (Au) | Gold (Au) |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED |
| Base Number Matches | 1 | 1 | 1 | - |
电子工程世界版权所有
京B2-20211791
京ICP备10001474号-1
电信业务审批[2006]字第258号函
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
