MwT-17
500 MHz-12 GHz High Linearity
Low Noise GaAs FET
DOWNLOAD ADDITIONAL DATA
WWW.MWTINC.COM
50
50
50
50
63
279
90
FEATURES
•
1 WATT POWER OUTPUT WITH HIGH LINEARITY
•
HIGH ASSOCIATED GAIN
•
0.8 MICRON REFRACTORY METAL/GOLD GATE
•
2400 MICRON GATE WIDTH
•
DIAMOND-LIKE CARBON PASSIVATION
•
CHOICE OF CHIP AND ONE PACKAGE TYPE
65
50
116
50
116
1130
50
116
50
65
CHIP THICKNESS = 125
All Dimensions in Microns
DESCRIPTION
The MwT-17 is a GaAs MESFET device which is ideally suited to narrow-band applications such as cellular telephone, PCN, point-to-
point communications links, and other wireless applications as the driver transistor for the output power amplifier. The third-order
intercept performance of the MwT-17 is excellent, typically 15 dB above the 1 dB compression point. The chip is produced using MwT’s
reliable metal system and devices from each wafer are screened to insure reliability. All chips are passivated using MwT’s patented
“Diamond-Like Carbon” process for increased durability, Designers can use MwT’s unique BIN selection feature to choose devices from
narrow Idss ranges, insuring consistent circuit operation.
DC SPECIFICATIONS AT Ta = 25
°
C
SYMBOL
PARAM. & CONDITIONS
UNITS
MIN
TYP
MAX
RF SPECIFICATIONS AT Ta = 25
°
C
SYMBOL
PARAMETERS AND CONDITIONS
FREQ
UNITS
MIN
TYP
IDSS
Gm
Vp
BVGSO
BVGDO
Rth
Saturated Drain Current
Vds= 3.0 V VGS= 0.0 V
Transconductance
Vds= 2.0 V VGS= 0.0 V
Pinch-off Voltage
Vds= 3.0 V IDS= 16.0 mA
Gate-to-Source Breakdown Volt.
Igs= -1.6 mA
Gate-to-Drain Breakdown Volt.
Igd= -1.6 mA
Thermal
Resistance
MwT-17 Chip
mA
mS
V
V
V
°C/W
240
290
380
-2.5
-6.0
-8.0
-12.0
920
P1dB
PAE
Output Power at 1 dB Compression
VDS= 6.0 V IDS= 420mA
Power Added Efficiency
VDS= 6.0 V IDS= 420mA
Small Signal Gain
VDS= 6.0V IDS= 420mA
Recommended IDSS Range
for Optimum P1dB
Intercept Point 3rd Order
VDS= 6.0V IDS= 420mA
Noise Figure
VDS= 6.0V IDS= 420mA
12 GHz
12 GHz
12 GHz
dBm
%
dB
mA
28.5
20
6
30.0
30
7.0
480-
760
+45
0.8
-5.0
SSG
IDSS
-12.0
IP3
33
NF
12 GHz
900 MHz
dBm
dB
*Overall Rth depends on case mounting.
DEVICE EQUIVALENT CIRCUIT MODEL
Lg
GATE
PARAMETER
Rd
Rds
Cds
Cpd
Ld
DRAIN
VALUE
Rs
Ls
Rds
Cds
Rd
Cpd
Ld
Lg
Cpg
Rg
Cgs
Ri
Cgd
gm
tau
0.2
0.04
40.0
0.4
0.17
0.2
0.06
0.16
0.1
0.1
2.5
1.0
0.25
330
1.7
Ω
nH
Ω
pF
Ω
pF
nH
nH
pF
Ω
pF
Ω
pF
mS
psec
Rg
Cgs
Cgd
Cpg
Ri
gm
tau
Rs
Ls
SOURCE
Source Resistance
Source Inductance
Drain-Source Resistance
Drain-Source Capacitance
Drain Resistance
Drain Pad Capacitance
Drain Inductance
Gate Bond Wire Inductance
Gate Pad Capacitance
Gate Resistance
Gate-Source Capacitance
Channel Resistance
Gate-Drain Capacitance
Transconductance
Transit Time
ORDERING INFORMATION
Chip
Package 71
MwT-17
MwT-1771
NOTE:
For Package information, please see supplimentary application note from our website at
www.mwtinc.com. When placing order or inquiring, please specify BIN range, wafer no., if
known, and screening level required.
4268 Solar Way
Fremont
California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208
All rights reserved. MicroWave Technology, Inc. All specifications subject to change without notice.
MwT-17
500 MHz-12 GHz High Linearity
Low Noise GaAs FET
Bonding Diagram for the MwT-17 is Forthcoming
Please Refer to Factory for Information
SAFE OPERATING LIMITS vs. BACKSIDE CHIP
1200
1000
150
125
100
75°
C or Lower
°
Absolute Maximum
Continuous Maximum
MAXIMUM RATINGS AT Ta = 25
°
C
125
100
75°
C or Lower
°
SYMBOL
PARAMETER
UNITS
CONT MAX
1
ABSOLUTE MAX
2
Ids (mA)
800
600
VDS
Tch
Tst
Pin
Drain to Source Voltage
Channel Temperature
Storage Temperature
RF Input Power
V
°C
°C
mW
See Safe Operating Limits
+150
+175
-65 to +150
+175
950
1400
400
NOTES: 1. Exceeding any one of these limits in continuous operation may reduce the
mean-time-to-failure below the design goals.
2. Exceeding any one of these limits may cause permanent damage.
200
0
0
2
4
Vds (V)
6
8
BIN SELECTION
BIN#
IDSS
(mA)
1
2
3
4
360-
400
5
400-
440
6
440-
480
7
480-
520
8
520-
560
9
560-
600
10
600-
640
11
640-
680
12
680-
720
13
720-
760
14
760-
800
15
800-
840
16
840-
880
17
880-
920
18
920-
960
240- 280- 320-
280 320 360
BIN ACCURACY STATEMENT
When placing order or inquiring, please specify BIN range, wafer no., if known, and screening level required.
4268 Solar Way
Fremont
California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208
All rights reserved. MicroWave Technology, Inc. All specifications subject to change without notice.
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