MwT-1
12 GHz High Gain
GaAs FET
DOWNLOAD ADDITIONAL DATA
WWW.MWTINC.COM
50
75
241
70
255
CHIP THICKNESS = 125
FEATURES
•
10 dB GAIN AT 12 GHz
•
EXCELLENT FOR FEEDBACK AMPLIFIER APPLICATIONS
100 MHz TO 12 GHz
•
0.3 MICRON REFRACTORY METAL/GOLD GATE
•
630 MICRON GATE WIDTH
•
CHOICE OF CHIP AND THREE PACKAGE TYPES
50
775
255
All Dimensions in Microns
DESCRIPTION
The MwT-1 is a GaAs MESFET device whose nominal quarter-micron gate length and 630 micron gate width make it ideally suited to
applications requiring high-gain in the 100 MHz to 12 GHz frequency range. The straight geometry of the MwT-1 makes it equally
effective for either wideband (e.g. 2 to 6 GHz) or narrow-band applications. The chip is produced using MwT’s reliable metal system and
devices from each wafer are screened to insure reliability. All chips are passivated using MwT’s patented “Diamond-Like Carbon” process
for increased durability, Designers can use MwT’s unique BIN selection feature to choose devices from narrow Idss ranges, insuring
consistent circuit operation.
DC SPECIFICATIONS AT Ta = 25
°
C
SYMBOL
PARAM. & CONDITIONS
UNITS
MIN
TYP
MAX
RF SPECIFICATIONS AT Ta = 25
°
C
SYMBOL
PARAMETERS AND CONDITIONS
FREQ
UNITS
MIN
TYP
IDSS
Gm
Vp
BVGSO
BVGDO
Rth
Saturated Drain Current
Vds= 4.0 V VGS= 0.0 V
Transconductance
Vds= 4.0 V VGS= 0.0 V
Pinch-off Voltage
Vds= 3.0 V IDS= 4.0 mA
Gate-to-Source Breakdown Volt.
Igs= -1.0 mA
Gate-to-Drain Breakdown Volt.
Igd= -1.0 mA
Thermal
Resistance
mA
mS
V
V
V
60
90
120
-2.0
-5.0
-6.0
-10.0
-10.0
240
P1dB
SSG
Output Power at 1 dB Compression
VDS= 5.0 V IDS= 0.6 x IDSS
Small Signal Gain
VDS= 5.0 V IDS= 0.6 x IDSS
Optimum Noise Figure
VDS= 3.0 V IDS= 30 mA
Gain@Opt. NF
VDS= 3.0V IDS= 30 mA
Recommended IDSS Range
for Optimum P1dB
12 GHz
12 GHz
12 GHz
12 GHz
dBm
dB
dB
dB
mA
23.0
9.0
24.0
10.0
2.0
7.0
120-
210
-5.0
NFopt
GA
IDSS
MwT-1 Chip, 171
°C/W
MwT-170, 173
*Overall Rth depends on case mounting.
80
180*
DEVICE EQUIVALENT CIRCUIT MODEL
Lg
GATE
PARAMETER
Rd
Rds
Cds
Cpd
Ld
DRAIN
VALUE
Rs
Ls
Rds
Cds
Rd
Cpd
Ld
Lg
Cpg
Rg
Cgs
Ri
Cgd
gm
tau
1.88
0.04
90
0.001
2.9
0.145
0.32
0.2
0.09
0.83
0.64
4.11
0.06
130.0
2.0
Ω
nH
Ω
pF
Ω
pF
nH
nH
pF
Ω
pF
Ω
pF
mS
psec
Rg
Cgs
Cgd
Cpg
Ri
gm
tau
Rs
Ls
SOURCE
Source Resistance
Source Inductance
Drain-Source Resistance
Drain-Source Capacitance
Drain Resistance
Drain Pad Capacitance
Drain Inductance
Gate Bond Wire Inductance
Gate Pad Capacitance
Gate Resistance
Gate-Source Capacitance
Channel Resistance
Gate-Drain Capacitance
Transconductance
Transit Time
ORDERING INFORMATION
Chip
Package 70
Package 71
Package 73
MwT-1
MwT-170
MwT-171
MwT-173
NOTE:
For Package information, please see supplimentary application note from our website at
www.mwtinc.com. When placing order or inquiring, please specify BIN range, wafer no., if
known, and screening level required.
4268 Solar Way
Fremont
California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208
All rights reserved. MicroWave Technology, Inc. All specifications subject to change without notice.
MwT-1
12 GHz High Gain
GaAs FET
MwT-1
DUAL BIAS
Output Reference
Plane
15 Mils Long
Copper Heat Sink
5 Mils Below Level of
Microstrip
MwT-1
OPTIONAL BONDING
Output Reference
Plane
50
Ω
Output
Microstrip
2 Mils
Required for
Self-Bias with
Source Cap Actions
MwT
FP1
50
Ω
Output
Microstrip
2 Mils
19 Mils Long
Copper Heat Sink
5 Mils Below Level of
Microstrip
MwT
FP1
20 Mils
20 Mils
7 Mils Long
18 Mils Long
Input Reference
Plane
2 Mils
50
Ω
Input
Microstrip
Gold Ridge
All Bond
5x 33x 5 Mils
Wires are 1.0
(1 each)
7 Mils Long
Input Reference
Plane
2 Mils
50
Ω
Input
Microstrip
Mil Diameter
Gold Ridge
10x 10x 5 For
Dual Bias, or
All Bond
25pF Caps for
Wires are 1.0
Single Bias
Mil Diameter
(2 each)
SAFE OPERATING LIMITS vs. BACKSIDE CHIP
Absolute Maximum
Continuous Maximum
400.0
Ids (mA)
300.0
200.0
100.0
0
150
125 100
75°
C or Lower
°
°
75°
C or Lower
MAXIMUM RATINGS AT Ta = 25
°
C
SYMBOL
PARAMETER
UNITS
CONT MAX
1
ABSOLUTE MAX
2
125 100
VDS
Tch
Tst
Pin
Drain to Source Voltage
Channel Temperature
Storage Temperature
RF Input Power
V
°C
°C
mW
See Safe Operating Limits
+150
+175
-65 to +150
+175
200
300
0
2
4
Vds (V)
6
8
NOTES: 1. Exceeding any one of these limits in continuous operation may reduce the
mean-time-to-failure below the design goals.
2. Exceeding any one of these limits may cause permanent damage.
TYPICAL NOISE PARAMETERS
MwT-1LN Chip: VDS= 3.0V IDS= 30mA
FREQUENCY
GHz
NF MIN
dB
GAMMA OPT
MAG ANGLE
Rn/50
NOISE FIGURE AND
ASSOCIATED GAIN VS. FREQUENCY
Associated Gain (dB)
2.0
NFopt (dB)
1.5
1.0
0.5
1
2
12
170-
180
13
180-
190
20.0
15.0
10.0
5.0
0.0
3
4
6 8
Frequency (GHz)
14
190-
200
15
200-
210
16
210-
220
1.00
2.00
4.00
6.00
8.00
12.00
0.45
0.65
0.95
1.25
1.52
1.88
0.885
0.722
0.591
0.61
0.656
0.733
32
61
110
139
157
176
1.27
0.5
0.24
0.17
0.14
0.11
12
17
220-
230
20
18
230-
240
BIN SELECTION
BIN#
IDSS
(mA)
1
60-
70
2
70-
80
3
80-
90
4
90-
100
5
100-
110
6
110-
120
7
120-
130
8
130-
140
9
140-
150
10
150-
160
11
160-
170
BIN ACCURACY STATEMENT
When placing order or inquiring, please specify BIN range, wafer no., if known, and screening level required.
4268 Solar Way
Fremont
California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208
All rights reserved. MicroWave Technology, Inc. All specifications subject to change without notice.
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