Datasheet> 器件分类 > 分立半导体> 晶体管> IRG4CC40UB

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IRG4CC40UB: 产品描述Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel, 6 INCH, WAFER; 产品类别分立半导体晶体管; 文件大小34KB，共1页; 制造商International Rectifier （ Infineon ）; 官网地址http://www.irf.com/

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IRG4CC40UB概述

Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel, 6 INCH, WAFER

IRG4CC40UB规格参数

参数名称	属性值
是否无铅	含铅
是否Rohs认证	不符合
零件包装代码	WAFER
包装说明	UNCASED CHIP, O-XUUC-N
Reach Compliance Code	compliant
ECCN代码	EAR99
其他特性	ULTRA FAST SPEED
集电极-发射极最大电压	600 V
配置	SINGLE
门极发射器阈值电压最大值	6 V
JESD-30 代码	O-XUUC-N
JESD-609代码	e0
元件数量	1
封装主体材料	UNSPECIFIED
封装形状	ROUND
封装形式	UNCASED CHIP
峰值回流温度（摄氏度）	NOT SPECIFIED
极性/信道类型	N-CHANNEL
认证状态	Not Qualified
表面贴装	YES
端子面层	TIN LEAD
端子形式	NO LEAD
端子位置	UPPER
处于峰值回流温度下的最长时间	NOT SPECIFIED
晶体管应用	POWER CONTROL
晶体管元件材料	SILICON
Base Number Matches	1

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PD- 91762

IRG4CC40UB

IRG4CC40UB IGBT Die in Wafer Form

600 V

Size 4

Ultra-Fast Speed

6" Wafer

Electrical Characteristics ( Wafer Form )

Parameter

CE (on)

(BR)CES

GE(th)

CES

GES

Description

Collector-to-Emitter Saturation Voltage

Colletor-to-Emitter Breakdown Voltage

Gate Threshold Voltage

Zero Gate Voltage Collector Current

Gate-to-Emitter Leakage Current

Guaranteed (Min/Max)

4.5V Max.

600V Min.

3.0V Min.,6.0V Max.

300 µA Max.

11µA Max.

Test Conditions

= 10A, T

= 25°C, V

= 15V

= 25°C, I

CES

= 250µA, V

= 0V

= V

, T

=25°C, I

=250µA

= 25°C, V

= 600V

= 25°C, V

= +/- 20V

Mechanical Data

Norminal Backmetal Composition, Thickness:

Norminal Front Metal Composition, Thickness:

Dimensions:

Wafer Diameter:

Wafer thickness:

Relevant Die Mechanical Dwg. Number

Minimum Street Width

Reject Ink Dot Size

Ink Dot Location

Recommended Storage Environment:

Recommended Die Attach Conditions

Reference Standard IR packaged part ( for design ) : IRG4PC40U

Cr-Ni / V-Ag ( 1kA-2kA-2.5kA )

99% Al, 1% Si (4 microns)

0.170" x 0.232"

150mm, with std. < 100 > flat

.015" + / -.003"

01-5219

100 Microns

0.25mm Diameter Minimum

Consistent throughout same wafer lot

Store in original container, in dessicated

nitrogen, with no contamination

For optimum electrical results, die attach

temperature should not exceed 300C

Die Outline

9/24/98

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