Philips Semiconductors
Product specification
NPN microwave power transistor
FEATURES
•
Input prematching cell allows an
easier design of circuits
•
Diffused emitter ballasting resistors
providing excellent current sharing
and withstanding a high VSWR
•
Interdigitated structure provides
high emitter efficiency
•
Gold metallization realizes very
good characteristics stability and
excellent lifetime
•
Multicell geometry gives good
balance of dissipated power and
low thermal resistance.
APPLICATIONS
Common base class C narrowband
pulsed power amplifiers at 1030 MHz
for IFF applications.
DESCRIPTION
NPN silicon planar epitaxial
microwave transistor with internal
input prematching cell in a SOT440A
metal ceramic package with base
connected to flange.
3
2
Top view
Marking code:
10010U.
MAM131
MTB10010U
QUICK REFERENCE DATA
Microwave performance for T
mb
= 25
°C
in a common base class C
narrowband amplifier.
MODE OF
f
CONDITIONS
OPERATION
(MHz)
Class C
t
p
= 1
µs;
δ
= 1%
1030
V
CC
(V)
24
P
L
(W)
>9.5
G
PO
(dB)
>9.5
η
C
(%)
>50
Z
i
/Z
L
(Ω)
see
Figs 5
and 6
PINNING - SOT440A
PIN
1
2
3
collector
emitter
base connected to flange
DESCRIPTION
handbook, 4 columns
1
c
b
e
Fig.1 Simplified outline and symbol.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Feb 20
2
Philips Semiconductors
Product specification
NPN microwave power transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
CES
V
EBO
I
C
P
tot
T
stg
T
j
T
sld
Note
1. Up to 0.3 mm from ceramic.
PARAMETER
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
collector current (average)
total power dissipation
storage temperature
junction temperature
soldering temperature
t
≤
10 s; note 1
T
mb
< 75
°C;
t
p
= 1
µs; δ
= 1%
CONDITIONS
open emitter
open base
R
BE
= 0
Ω
open collector
−
−
−
−
−
−
−65
−
−
MTB10010U
MIN.
MAX.
40
15
40
3
0.75
36
+200
200
235
UNIT
V
V
V
V
A
W
°C
°C
°C
MGA037
MGA038
handbook,
50
halfpage
handbook,
12
halfpage
Ptot
(W)
40
PL
(W)
8
30
20
4
10
0
–50
0
50
100
150
200
250
Tmb (
o
C)
0
0
0.5
1
1.5
Pi (W)
2
P
tot max
= 36 W under the nominal pulse conditions.
V
CC
= 24 V; t
p
= 1
µs; δ
= 1%; f = 1030 MHz.
Fig.2
Power derating curve.
Fig.3 Load power as a function of input power.
1997 Feb 20
3
Philips Semiconductors
Product specification
NPN microwave power transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-mb
R
th mb-h
Z
th j-mb
Note
1. See “Mounting
recommendations in the General part of handbook SC19a”.
CHARACTERISTICS
T
mb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
CES
I
EBO
PARAMETER
collector cut-off current
collector cut-off current
emitter cut-off current
CONDITIONS
V
CB
= 30 V; I
E
= 0
V
CE
= 30 V; R
BE
= 0
V
EB
= 1.5 V; I
C
= 0
45
PARAMETER
thermal resistance from junction to mounting base
thermal resistance from mounting base to heatsink
thermal impedance from junction to mounting base
CONDITIONS
T
j
= 100
°C
note 1
t
p
= 1
µs; δ
= 1%;
note 1
MTB10010U
MAX.
10.5
0.7
2.5
UNIT
K/W
K/W
K/W
MAX.
µA
µA
µA
300
4.5
UNIT
APPLICATION INFORMATION
Microwave performance up to T
mb
= 25
°C
and working in pulsed conditions in a narrowband test circuit as shown in
Fig.4.
MODE OF
OPERATION
Class C
CONDITIONS
t
p
= 1
µs; δ
= 1 %
f
(MHz)
1030
24
V
CC
(V)
P
L
(W)
>9.5;
typ. 11
G
po
(dB)
>9.5;
typ. 10
η
C
(%)
>50;
typ. 55
Z
i
/Z
L
(Ω)
see Figs 5 and 6
List of components
(see Fig.4)
COMPONENT
L1
C1
C2
C3
C4
C5
C6
C7
DESCRIPTION
0.4 mm diameter copper wire
tuning capacitor
chip capacitor
chip capacitor
chip capacitor
tantalum capacitor
feedthrough bypass capacitor
capacitor
−
0.5
−
5 pF
3 pF
10 pF
47 pF
10
µF,
50 V
−
220
µF,
63 V
VALUE
−
−
−
−
−
−
−
DIMENSIONS
rectangular loop
−
Tekelec 5855
Eurofarad CEC 23
Eurofarad CEC 23
Eurofarad CEC 23
−
Erie 1250-003
−
CATALOGUE NO.
1997 Feb 20
4
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