MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF255/D
The RF MOSFET Line
RF Power
Field-Effect Transistor
N–Channel Enhancement–Mode
Designed for broadband commercial and industrial applications at frequencies
to 54 MHz. The high gain, broadband performance and linear characterization of
this device makes it ideal for large–signal, common source amplifier applications
in 12.5 Volt mobile and base station equipment.
•
Guaranteed Performance at 54 MHz, 12.5 Volts
Output Power — 55 Watts PEP
Power Gain — 13 dB Min
Two–Tone IMD — –25 dBc Max
Efficiency — 40% Min, Two–Tone Test
•
Characterized with Series Equivalent Large–Signal Impedance Parameters
•
Excellent Thermal Stability
•
All Gold Metal for Ultra Reliability
•
Aluminum Nitride Package Electrical Insulator
•
Circuit Board Photomaster Available by Ordering Document
MRF255PHT/D from Motorola Literature Distribution.
MRF255
55 W, 12.5 Vdc, 54 MHz
N–CHANNEL
BROADBAND
RF POWER FET
CASE 211–11, STYLE 2
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Drain–Gate Voltage (RGS = 1.0 MΩ)
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
VDSS
VDGR
VGS
ID
PD
Tstg
TJ
Value
36
36
±
20
22
175
1.0
– 65 to +150
200
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Max
1.0
Unit
°C/W
Handling and Packaging
— MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling
and packaging MOS devices should be observed.
MOTOROLA RF
©
Motorola, Inc. 1995
DEVICE DATA
MRF255
1
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 20 mAdc)
Zero Gate Voltage Drain Current
(VDS = 15 Vdc, VGS = 0)
Gate–Source Leakage Current
(VGS = 20 Vdc, VDS = 0)
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 25 mAdc)
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 4.0 Adc)
Forward Transconductance
(VDS = 10 Vdc, ID = 3.0 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 12.5 Vdc, VGS = 0, f = 1.0 MHz)
Output Capacitance
(VDS = 12.5 Vdc, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance
(VDS = 12.5 Vdc, VGS = 0, f = 1.0 MHz)
FUNCTIONAL TESTS
(In Motorola Test Fixture.)
Common Source Amplifier Power Gain, f1 = 54, f2 = 54.001 MHz
(VDD = 12.5 Vdc, Pout = 55 W (PEP), IDQ = 400 mA)
Intermodulation Distortion (1), f1 = 54.000 MHz, f2 = 54.001 MHz
(VDD = 12.5 Vdc, Pout = 55 W (PEP), IDQ = 400 mA)
Drain Efficiency, f1 = 54; f2 = 54.001 MHz
(VDD = 12.5 Vdc, Pout = 55 W (PEP), IDQ = 400 mA)
Drain Efficiency, f = 54 MHz
(VDD = 12.5 Vdc, Pout = 55 W CW, IDQ = 400 mA)
Output Mismatch Stress, f1 = 54; f2 = 54.001 MHz
(VDD = 12.5 Vdc, Pout = 55 W (PEP), IDQ = 400 mA,
VSWR = 20:1, at all phase angles)
Gps
IMD(d3,d5)
η
η
ψ
13
—
40
—
16
– 30
45
60
—
– 25
—
—
dB
dBc
%
%
Ciss
Coss
Crss
—
—
—
140
285
38
—
—
44
pF
pF
pF
VGS(th)
VDS(on)
gfs
1.25
—
4.2
2.3
—
—
3.5
0.4
—
Vdc
Vdc
S
V(BR)DSS
IDSS
IGSS
36
—
—
—
—
—
—
5.0
5.0
Vdc
mAdc
µAdc
Symbol
Min
Typ
Max
Unit
No Degradation in Output Power
Before and After Test
(1) To MIL–STD–1311 Version A, Test Method 2204B, Two Tone, Reference Each Tone.
MRF255
2
MOTOROLA RF DEVICE DATA
RFC1
VGG
+
+
C5
C6
L5
C4
L1
C2
C3
L2
C9
R1
C10
R2
DUT
C7
C8
L3
L4
C11
C12
C14 N2
RF
OUTPUT
C15
C16
+
C17
VDD
RF
INPUT
N1
C1
C1 — 470 pF, Chip Capacitor
C2, C3, C11, C12 — 20 – 200 pF, Trimmer, ARCO #464
C4 — 100 pF, Chip Capacitor
C5, C17 — 100
µF,
15 V, Electrolytic
C6 — 0.001
µF,
Disc Ceramic
C7, C8, C9, C10 — 330 pF, Chip Capacitor
C14 — 1200 pF, ATC Chip Capacitor
C15 — 910 pF, 500 V, Dipped Mica
C16 — 47
µF,
16 V, Electrolytic
L1 — 8 Turns, #20 AWG, 0.126″ ID
L2 — 5 Turns, #18 AWG, 0.142″ ID
L3 — 3 Turns, #20 AWG, 0.102″ ID
L4 — 7 Turns, #24 AWG, 0.070″ ID
L5 — 6.5 Turns, #18 AWG, 0.230″ ID, 0.5″ Long
N1, N2 — Type N Flange Mount
RFC1 — Ferroxcube VK–200–19/4B
R1 — 39 kΩ, 1/4 W Carbon
R2 — 150
Ω,
1/4 W Carbon
Board — G–10 .060″
Figure 1. 54 MHz Linear RF Test Circuit Electrical Schematic
TYPICAL CHARACTERISTICS
IMD, INTERMODULATION DISTORTION (dB)
– 10
Pout , OUTPUT POWER (WATTS PEP)
100
90
80
70
60
50
40
30
20
10
0
VDD = 12.5 Vdc
IDQ = 400 mA
f1 = 54 MHz, f2 = 54.001 MHz
1
2
3
Pin, INPUT POWER (WATTS PEP)
4
– 20
IMD3
– 30
IMD5
– 40
VDD = 12.5 Vdc
IDQ = 400 mA
f1 = 54 MHz, f2 = 54.001 MHz
0
10
20
30
40
50
60
70
OUTPUT POWER (WATTS PEP)
80
90
– 50
– 60
Figure 2. IMD versus Output Power
100
Pout , OUTPUT POWER (WATTS CW)
Pout , OUTPUT POWER (WATTS CW)
90
80
70
60
50
40
30
20
10
0
VDD = 12.5 Vdc
IDQ = 400 mA
f = 54 MHz
1
2
3
Pin, INPUT POWER (WATTS CW)
4
100
90
80
70
60
50
40
30
20
10
0
9
Figure 3. Output Power versus Input Power
Pin = 4 W
2W
1W
0.5 W
IDQ = 400 mA
f = 54 MHz
10
12
13
14
VDD, SUPPLY VOLTAGE (VOLTS)
11
15
16
Figure 4. Output Power versus Input Power
Figure 5. Output Power versus Supply Voltage
MOTOROLA RF DEVICE DATA
MRF255
3
TYPICAL CHARACTERISTICS
15
IDS , DRAIN CURRENT (AMPS)
1000
Coss
10
C, CAPACITANCE (pF)
100
Ciss
5
VDS = 10 Vdc
VGS(th) = 2.3 Vdc
0
0
1
2
3
4
5
VGS, GATE–SOURCE VOLTAGE (VOLTS)
6
Crss
VGS = 0 Vdc
f = 1 MHz
10
0
5
20
25
10
15
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
30
Figure 6. Drain Current versus Gate Voltage
VGS, GATE–SOURCE VOLTAGE (NORMALIZED)
1.04
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
0.95
0.94
– 25
VDD = 12.5 Vdc
0
1A
0.5 A
150
175
1
1
3A
5A
ID = 7 A
I D, DRAIN CURRENT (AMPS)
Figure 7. Capacitance versus Voltage
TC = 25°C
10
25
50
75
100
125
TC, CASE TEMPERATURE (°C)
10
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
100
Figure 8. Gate–Source Voltage versus
Case Temperature
Figure 9. DC Safe Operating Area
Table 1. Series Equivalent Input and Output Impedance
VDD = 12.5 Vdc, IDQ = 400 mA, Pout = 55 W PEP
Optimized for Efficiency and IM Performance
f
MHz
54
Zin
Ohms
6.50 + j7.96
ZOL*
Ohms
1.27 + j1.54
ZOL* = Conjugate of the optimum load impedance into which the device
operates at a given power, voltage and frequency.
MRF255
4
MOTOROLA RF DEVICE DATA
Table 2. Common Source Scattering Parameters
(VDS = 12.5 Vdc)
ID = 100 mA
f
(MHz)
1
2
5
10
20
30
40
50
60
70
80
90
100
120
140
160
180
200
220
240
260
S11
|S11|
0.98
0.92
0.81
0.76
0.74
0.75
0.75
0.76
0.78
0.79
0.80
0.81
0.82
0.85
0.87
0.88
0.90
0.91
0.92
0.93
0.94
é
φ
– 32
– 60
– 110
– 140
– 158
– 163
– 166
– 167
– 168
– 168
– 169
– 169
– 169
– 170
– 171
– 172
– 173
– 174
– 175
– 176
– 177
S21
|S21|
39.6
34.6
21.3
11.9
6.08
4.03
2.98
2.35
1.91
1.60
1.36
1.18
1.03
0.81
0.65
0.54
0.45
0.38
0.33
0.29
0.25
é
φ
161
145
118
102
90
82
77
72
67
63
59
56
52
46
41
37
33
30
27
25
23
S12
|S12|
0.013
0.023
0.035
0.039
0.040
0.039
0.038
0.037
0.036
0.034
0.032
0.031
0.029
0.025
0.022
0.019
0.017
0.016
0.016
0.016
0.018
é
φ
71
56
29
14
4
–2
–5
–8
– 10
– 12
– 13
– 14
– 15
– 14
– 11
–6
2
12
23
34
44
S22
|S22|
0.32
0.50
0.75
0.83
0.86
0.87
0.87
0.88
0.89
0.89
0.90
0.90
0.91
0.92
0.93
0.94
0.95
0.95
0.96
0.96
0.97
é
φ
– 80
– 108
– 143
– 160
– 169
– 173
– 174
– 175
– 176
– 176
– 177
– 177
– 177
– 178
– 179
180
179
178
177
176
175
ID = 400 mA
f
(MHz)
1
2
5
10
20
30
40
50
60
70
80
90
100
120
140
160
180
200
220
240
260
S11
|S11|
0.98
0.95
0.90
0.88
0.88
0.88
0.88
0.88
0.88
0.88
0.88
0.89
0.89
0.89
0.89
0.90
0.90
0.91
0.91
0.91
0.92
é
φ
– 46
– 80
– 129
– 153
– 167
– 171
– 173
– 175
– 176
– 176
– 177
– 177
– 178
– 178
– 179
– 179
– 180
180
179
179
178
S21
|S21|
56.6
46.1
25.1
13.4
6.82
4.55
3.41
2.72
2.25
1.92
1.67
1.47
1.31
1.08
0.90
0.77
0.67
0.59
0.53
0.47
0.43
é
φ
155
137
113
100
91
87
83
80
78
75
72
70
68
63
59
55
52
48
45
42
40
S12
|S12|
0.008
0.013
0.017
0.019
0.019
0.019
0.019
0.019
0.019
0.019
0.019
0.019
0.019
0.019
0.019
0.020
0.021
0.022
0.023
0.025
0.026
é
φ
66
48
25
14
10
9
10
11
12
14
16
18
20
24
29
34
38
43
47
50
53
S22
|S22|
0.45
0.64
0.84
0.89
0.91
0.91
0.91
0.91
0.91
0.92
0.92
0.92
0.92
0.92
0.93
0.93
0.93
0.94
0.94
0.95
0.95
é
φ
– 148
– 151
– 164
– 172
– 176
– 178
– 178
– 179
– 179
– 180
180
179
179
179
178
177
177
176
175
175
174
MOTOROLA RF DEVICE DATA
MRF255
5
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
