MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document
by MRF21180/D
The RF Sub - Micron MOSFET Line
RF Power Field Effect Transistor
Designed for W- CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
To be used in Class AB for PCN - PCS/cellular radio and WLL applications.
•
Typical 2 - carrier W - CDMA Performance for V
DD
= 28 Volts,
I
DQ
= 2 x 850 mA, f1 = 2135 MHz, f2 = 2145 MHz,
Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over
3.84 MHz BW @ f1 - 5 MHz and f2 + 5 MHz. Distortion Products
Measured over a 3.84 MHz BW @ f1 - 10 MHz and f2 + 10 MHz,
Each Carrier Peak/Avg. = 8.3 dB @ 0.01% Probability on CCDF.
Output Power — 38 Watts (Avg.)
Power Gain — 12.1 dB
Efficiency — 22%
IM3 — 37.5 dBc
ACPR — - 41 dBc
•
Internally Input and Output Matched, for Ease of Use
•
High Gain, High Efficiency, and High Linearity
•
Integrated ESD Protection
•
Designed for Maximum Gain and Insertion Phase Flatness
•
Capable of Handling 5:1 VSWR, @ 28 Vdc, 2110 MHz, 170 Watts (CW)
Output Power
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
N - Channel Enhancement - Mode Lateral MOSFET
MRF21180R6
2170 MHz, 170 W, 28 V
LATERAL N - CHANNEL
RF POWER MOSFET
Freescale Semiconductor, Inc...
CASE 375D - 04, STYLE 1
NI - 1230
MAXIMUM RATINGS
Rating
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Value
65
- 0.5, +15
380
2.17
- 65 to +150
200
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Value (1)
0.46
Unit
°C/W
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Class
1 (Minimum)
M3 (Minimum)
(1) Refer to AN1955/D,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.motorola.com/semiconductors/rf.
Select Documentation/Application Notes - AN1955.
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 4
MOTOROLA RF
Motorola, Inc. 2004
DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF21180R6
1
Freescale Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
(1)
Drain- Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 100
µAdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate- Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
ON CHARACTERISTICS
(1)
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 200
µAdc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 850 mAdc)
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
2
3
—
—
—
3.9
0.18
6
4
5
0.22
—
Vdc
Vdc
Vdc
S
V
(BR)DSS
I
DSS
I
GSS
65
—
—
—
—
—
—
10
1
Vdc
µAdc
µAdc
Symbol
Min
Typ
Max
Unit
Freescale Semiconductor, Inc...
Drain- Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 2 Adc)
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 2 Adc)
DYNAMIC CHARACTERISTICS
(1)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc, V
GS
= 0, f = 1 MHz)
C
rss
—
3.6
—
pF
FUNCTIONAL TESTS
(In Motorola Test Fixture, 50 ohm system) (2)
2 - Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. Each carrier has Peak/Avg. ratio = 8.3 dB @ 0.01% Probability on CCDF.
Common- Source Amplifier Power Gain
(V
DD
= 28 Vdc, P
out
= 38 W Avg., I
DQ
= 2 x 850 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz,
f2 = 2167.5 MHz)
Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 38 W Avg., I
DQ
= 2 x 850 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz,
f2 = 2167.5 MHz)
Third Order Intermodulation Distortion
(V
DD
= 28 Vdc, P
out
= 38 W Avg., I
DQ
= 2 x 850 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz,
f2 = 2167.5 MHz; IM3 measured over 3.84 MHz BW @ f1 - 10 MHz
and f2 +10 MHz)
Adjacent Channel Power Ratio
(V
DD
= 28 Vdc, P
out
= 38 W Avg., I
DQ
= 2 x 850 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz,
f2 = 2167.5 MHz; ACPR measured over 3.84 MHz BW @ f1 - 5 MHz
and f2 +5 MHz.)
Input Return Loss
(V
DD
= 28 Vdc, P
out
= 38 W Avg., I
DQ
= 2 x 850 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz,
f2 = 2167.5 MHz)
Output Mismatch Stress
(V
DD
= 28 Vdc, P
out
= 170 W CW, I
DQ
= 2 x 850 mA, f = 2170 MHz
VSWR = 5:1, All Phase Angles at Frequency of Tests)
G
ps
11
12.1
—
dB
η
19
22
—
%
IM3
—
- 37.5
- 35
dBc
ACPR
—
- 41
- 39
dBc
IRL
—
- 12
-9
dB
Ψ
No Degradation In Output Power
Before and After Test
(1) Each side of device measured separately. Part is internally matched both on input and output.
(2) Measurements made with device in push - pull configuration.
(continued)
MRF21180R6
2
For More Information On This Product,
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MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS — continued
(T
C
= 25°C unless otherwise noted)
Characteristic
Two - Tone Common - Source Amplifier Power Gain
(V
DD
= 28 Vdc, P
out
= 170 W, I
DQ
= 2 x 850 mA,
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
Two - Tone Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 170 W, I
DQ
= 2 x 850 mA,
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
Two - Tone Intermodulation Distortion
(V
DD
= 28 Vdc, P
out
= 170 W, I
DQ
= 2 x 850 mA,
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
Two - Tone Input Return Loss
(V
DD
= 28 Vdc, P
out
= 170 W, I
DQ
= 2 x 850 mA,
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
Symbol
G
ps
Min
—
Typ
12
Max
—
Unit
dB
FUNCTIONAL TESTS
(In Motorola Test Fixture, 50 ohm system) (2) (continued)
η
—
33
—
%
IMD
—
- 30
—
dBc
IRL
—
- 12
—
dB
Freescale Semiconductor, Inc...
P
out
, 1 dB Compression Point
(V
DD
= 28 Vdc, I
DQ
= 2 x 850 mA, f = 2170 MHz)
(2) Measurements made with device in push - pull configuration.
P1dB
—
180
—
W
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF21180R6
3
Freescale Semiconductor, Inc.
V
GG
R1
+
C23
C15
C11
C5
Z9
Z11
Z15
C4
Z17
R3
+
B1
Z13
C8
C9
C14
C18
+
C19
+
C21
V
DD
RF
INPUT
Z1
Z2
Z3
C1
Z5
Z7
R5
DUT
Z19
Z20
RF
OUTPUT
Z4
C2
Z6
Z8
V
GG
R4
B2
Z10
Z12
Z16
C3
Z18
Freescale Semiconductor, Inc...
R2
+
C24
C16
Z14
V
DD
+
C7
C10
C13
C17
+
C20
+
C22
C12
C6
Figure 1. MRF21180 Test Circuit Schematic
Table 1. MRF21180 Test Circuit Component Designations and Values
Part
B1, B2
C1, C2, C3, C4
C5, C6, C7, C8
C9, C10
C11, C12, C13, C14
C15, C16, C17, C18
C19, C20
C21, C22, C23, C24
N1, N2
R1, R2, R3, R4
R5
Z1, Z20
Z2, Z19
Z3, Z18
Z4, Z17
Z5, Z6
Z7, Z8
Z9, Z10
Z11, Z12
Z13, Z14
Z15, Z16
WB1, WB2, WB3, WB4
Board
PCB
Description
Short Ferrite Beads
30 pF Chip Capacitors
5.6 pF Chip Capacitors
10
µF
Tantalum Capacitors
1000 pF Chip Capacitors
0.1
µF
Chip Capacitors
1.0
µF
Tantalum Capacitors
22
µF
Tantalum Capacitors
Type N Flange Mounts
10
Ω,
1/8 W Chip Resistors
1.0 kΩ, 1/8 W Chip Resistor
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Wear Blocks
0.030″ Glass Teflon
Etched Circuit Boards
RF-35,
ε
r
= 3.50
MRF21180 Rev. 4
Taconic
CMR
0.790″ x 0.065″
0.830″ x 0.112″
0.145″ x 0.065″
1.700″ x 0.065″
0.340″ x 0.065″
0.455″ x 0.600″
0.980″ x 0.035″
0.510″ x 0.645″
0.770″ x 0.058″
0.280″ x 0.065″
Value, P/N or DWG
2743019447
100B300JCA500X
100B5R6JCA500X
T495X106K035AS4394
100B102JCA500X
CDR33BX104AKWS
T491C105M050
T491X226K035AS4394
3052-1648-10
Manufacturer
Fair Rite
ATC
ATC
Kemet
ATC
Kemet
Kemet
Kemet
Omni Spectra
MRF21180R6
4
For More Information On This Product,
Go to: www.freescale.com
MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
C19
C14
R4
C15C11
B1
R3
C5
C8 C10
C22
C18
C21
C1
R5
WB4
WB3
C4
C2
C3
WB1
WB2
Freescale Semiconductor, Inc...
C23
C6
B1
R1
C20
C16 C12
R2
C17
C13
C7 C9
MRF21180
Rev. 4
C24
Figure 2. MRF21180 Test Circuit Component Layout
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF21180R6
5
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