MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MUR190E/D
SWITCHMODE
™
Power Rectifiers
Ultrafast “E’’ Series with High Reverse
Energy Capability
. . . designed for use in switching power supplies, inverters and as
free wheeling diodes, these state–of–the–art devices have the
following features:
•
20 mjoules Avalanche Energy Guaranteed
•
Excellent Protection Against Voltage Transients in Switching
Inductive Load Circuits
•
Ultrafast 75 Nanosecond Recovery Time
•
175°C Operating Junction Temperature
•
Low Forward Voltage
•
Low Leakage Current
•
High Temperature Glass Passivated Junction
•
Reverse Voltage to 1000 Volts
Mechanical Characteristics:
•
Case: Epoxy, Molded
•
Weight: 0.4 gram (approximately)
•
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
•
Lead and Mounting Surface Temperature for Soldering
Purposes: 220°C Max. for 10 Seconds, 1/16″ from case
•
Shipped in plastic bags, 1000 per bag
•
Available Tape and Reeled, 5000 per reel, by adding a “RL’’
suffix to the part number
•
Polarity: Cathode Indicated by Polarity Band
•
Marking: U190E, U1100E
MUR190E
MUR1100E
MUR1100E is a
Motorola Preferred Device
ULTRAFAST
RECTIFIERS
1.0 AMPERE
900–1000 VOLTS
CASE 59–04
MAXIMUM RATINGS
MUR
Rating
R i
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current (Square Wave)
(Mounting Method #3 Per Note 1)
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions, halfwave, single phase, 60 Hz)
Operating Junction Temperature and Storage Temperature
Symbol
S b l
VRRM
VRWM
VR
IF(AV)
IFSM
TJ, Tstg
190E
900
1100E
1000
Unit
U i
Volts
1.0 @ TA = 95°C
35
Amps
Amps
°C
*
65 to +175
See Note 1
THERMAL CHARACTERISTICS
Maximum Thermal Resistance, Junction to Ambient
(1) Pulse Test: Pulse Width = 300
µs,
Duty Cycle
≤
2.0%.
R
θJA
°C/W
SWITCHMODE is a trademark of Motorola, Inc.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Rev 1
©
Rectifier
Inc. 1996
Data
Motorola,
Device
1
MUR190E MUR1100E
ELECTRICAL CHARACTERISTICS
MUR
Rating
R i
Maximum Instantaneous Forward Voltage (1)
(iF = 1.0 Amp, TJ = 150°C)
(iF = 1.0 Amp, TJ = 25°C)
Maximum Instantaneous Reverse Current (1)
(Rated dc Voltage, TJ = 100°C)
(Rated dc Voltage, TJ = 25°C)
Maximum Reverse Recovery Time
(IF = 1.0 Amp, di/dt = 50 Amp/µs)
(IF = 0.5 Amp, iR = 1.0 Amp, IREC = 0.25 Amp)
Maximum Forward Recovery Time
(IF = 1.0 Amp, di/dt = 100 Amp/µs, Recovery to 1.0 V)
Controlled Avalanche Energy (See Test Circuit in Figure 6)
(1) Pulse Test: Pulse Width = 300
µs,
Duty Cycle
≤
2.0%.
Symbol
S b l
vF
1.50
1.75
iR
600
10
trr
100
75
tfr
WAVAL
75
10
ns
mJ
ns
µA
190E
1100E
Unit
U i
Volts
2
Rectifier Device Data
MUR190E MUR1100E
ELECTRICAL CHARACTERISTICS
20
IR, REVERSE CURRENT (
m
A)
1000
TJ = 175°C
100
10
7.0
5.0
i F , INSTANTANEOUS FORWARD CURRENT (AMPS)
3.0
TJ = 175°C
2.0
100°C
1.0
0.7
0.5
0.3
0.2
25°C
10
100°C
1.0
25°C
0.1
0.01
0
100
200
300
400
500
600
700
800
900 1000
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Typical Reverse Current*
* The curves shown are typical for the highest voltage device in the
grouping. Typical reverse current for lower voltage selections can be
estimated from these same curves if VR is sufficiently below rated VR.
IF(AV) , AVERAGE FORWARD CURRENT (AMPS)
5.0
0.1
0.07
0.05
0.03
0.02
4.0
RATED VR
R
q
JA = 50°C/W
3.0
2.0
SQUARE WAVE
1.0
0
0
50
dc
0.01
0.3 0.5
0.7
0.9
1.1
1.3
1.5
1.7
1.9
2.1
2.3
vF, INSTANTANEOUS VOLTAGE (VOLTS)
100
150
200
250
Figure 1. Typical Forward Voltage
TA, AMBIENT TEMPERATURE (°C)
Figure 3. Current Derating
(Mounting Method #3 Per Note 1)
PF(AV) , AVERAGE POWER DISSIPATION (WATTS)
5.0
I
(CAPACITIVE LOAD)
PK
I
4.0
AV
+
20
10
5.0
20
TJ = 25°C
C, CAPACITANCE (pF)
2.5
10
7.0
5.0
3.0
TJ = 175°C
2.0
dc
SQUARE WAVE
1.0
0
0
0.5
1.0
1.5
2.0
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
3.0
2.0
0
10
20
30
40
50
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Power Dissipation
Figure 5. Typical Capacitance
Rectifier Device Data
3
MUR190E MUR1100E
+VDD
IL
40 mH COIL
VD
MERCURY
SWITCH
ID
ID
VDD
t0
t1
t2
t
BVDUT
DUT
S1
IL
Figure 6. Test Circuit
Figure 7. Current–Voltage Waveforms
The unclamped inductive switching circuit shown in
Figure 6 was used to demonstrate the controlled avalanche
capability of the new “E’’ series Ultrafast rectifiers. A mercury
switch was used instead of an electronic switch to simulate a
noisy environment when the switch was being opened.
When S1 is closed at t0 the current in the inductor IL ramps
up linearly; and energy is stored in the coil. At t1 the switch is
opened and the voltage across the diode under test begins to
rise rapidly, due to di/dt effects, when this induced voltage
reaches the breakdown voltage of the diode, it is clamped at
BVDUT and the diode begins to conduct the full load current
which now starts to decay linearly through the diode, and
goes to zero at t2.
By solving the loop equation at the point in time when S1 is
opened; and calculating the energy that is transferred to the
diode it can be shown that the total energy transferred is
equal to the energy stored in the inductor plus a finite amount
of energy from the VDD power supply while the diode is in
breakdown (from t1 to t2) minus any losses due to finite com-
ponent resistances. Assuming the component resistive ele-
ments are small Equation (1) approximates the total energy
transferred to the diode. It can be seen from this equation
that if the VDD voltage is low compared to the breakdown
voltage of the device, the amount of energy contributed by
the supply during breakdown is small and the total energy
can be assumed to be nearly equal to the energy stored in
the coil during the time when S1 was closed, Equation (2).
The oscilloscope picture in Figure 8, shows the information
obtained for the MUR8100E (similar die construction as the
MUR1100E Series) in this test circuit conducting a peak cur-
rent of one ampere at a breakdown voltage of 1300 volts,
and using Equation (2) the energy absorbed by the
MUR8100E is approximately 20 mjoules.
Although it is not recommended to design for this condi-
tion, the new “E’’ series provides added protection against
those unforeseen transient viruses that can produce unex-
plained random failures in unfriendly environments.
EQUATION (1):
W
AVAL
[
1 LI 2
2 LPK
BV
DUT
BV
–V
DUT DD
CH1
CH2
500V
50mV
A
20
m
s
953 V
VERT
CHANNEL 2:
IL
0.5 AMPS/DIV.
EQUATION (2):
W
AVAL
CHANNEL 1:
VDUT
500 VOLTS/DIV.
[
1 LI 2
2 LPK
1
CH1
ACQUISITIONS
SAVEREF SOURCE
CH2
217:33 HRS
STACK
REF
REF
TIME BASE:
20
m
s/DIV.
Figure 8. Current–Voltage Waveforms
4
Rectifier Device Data
MUR190E MUR1100E
NOTE 1 — AMBIENT MOUNTING DATA
Data shown for thermal resistance junction to
ambient (R
θJA
) for the mountings shown is to be used
as typical guideline values for preliminary
engineering or in case the tie point temperature
cannot be measured.
TYPICAL VALUES FOR R
θJA
IN STILL AIR
Mounting
Method
1
2
R
θJA
3
Lead Length, L
1/4
1/2
1/8
52
65
72
67
80
87
50
Units
°C/W
°C/W
°C/W
MOUNTING METHOD 1
L
L
Rectifier Device Data
ÉÉÉÉÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉÉÉÉÉ
Vector Pin Mounting
MOUNTING METHOD 3
ÉÉÉÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉÉÉÉ
MOUNTING METHOD 2
L
L
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
L = 3/8
″
Board Ground Plane
P.C. Board with
1–1/2
″
X 1–1/2
″
Copper Surface
5
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