CMPDM3590 N-CH
CMPDM7590 P-CH
SURFACE MOUNT
N-CHANNEL AND P-CHANNEL
ENHANCEMENT-MODE
COMPLEMENTARY MOSFETS
Central
TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPDM3590
and CMPDM7590 are complementary N-Channel
and P-Channel Enhancement-mode silicon MOSFETs
designed for high speed pulsed amplifier and driver
applications. These devices offer desirable MOSFET
electrical characteristics in an economical industry
standard SOT-23 package.
MARKING CODES: CMPDM3590: C359
CMPDM7590: C759
SOT-23 CASE
• Devices are
Halogen Free
by design
APPLICATIONS:
• Load/Power Switches
• Power Supply Converter Circuits
• Battery Powered Portable Devices
MAXIMUM RATINGS:
(TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State)
Continuous Drain Current (tp < 5s)
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
ELECTRICAL CHARACTERISTICS:
(TA=25°C)
SYMBOL
TEST CONDITIONS
IGSSF, IGSSR VGS=5.0V, VDS=0V
VDS=5.0V, VGS=0V
IDSS
VDS=16V, VGS=0V
IDSS
BVDSS
VGS(th)
rDS(ON)
rDS(ON)
rDS(ON)
rDS(ON)
rDS(ON)
gFS
Crss
Ciss
Coss
ton
toff
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
VGS=4.5V, ID=100mA
VGS=2.5V, ID=50mA
VGS=1.8V, ID=20mA
VGS=1.5V, ID=10mA
VGS=1.2V, ID=1.0mA
VDS=5.0V, ID=125mA
VDS=15V, VGS=0V, f=1.0MHz
VDS=15V, VGS=0V, f=1.0MHz
VDS=15V, VGS=0V, f=1.0MHz
VDD=10V, VGS=4.5V, ID=200mA
VDD=10V, VGS=4.5V, ID=200mA
FEATURES:
• ESD Protection up to 2kV
• Power Dissipation: 350mW
• Low Threshold Voltage
• Logic Level Compatibility
• Small SOT-23 Surface Mount Package
SYMBOL
VDS
VGS
ID
ID
PD
TJ, Tstg
Θ
JA
CMPDM3590
20
8.0
160
200
350
-65 to +150
357
CMPDM7590
MIN TYP MAX
-
-
100
-
-
20
0.4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
4.0
5.5
8.0
11
20
1.3
1.0
12
2.7
60
210
50
100
-
1.0
5.0
7.0
10
17
-
-
-
-
-
-
-
140
180
CMPDM7590
UNITS
V
V
mA
mA
mW
°C
°C/W
CMPDM3590
MIN TYP MAX
-
-
100
-
-
20
0.4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1.5
2.0
3.0
4.0
7.0
1.3
2.2
9.0
3.0
40
150
50
100
-
1.0
3.0
4.0
6.0
10
-
-
-
-
-
-
-
UNITS
nA
nA
nA
V
V
Ω
Ω
Ω
Ω
Ω
S
pF
pF
pF
ns
ns
R0 (19-May 2009)