CY62167ESL MoBL
®
16-Mbit (1 M × 16) Static RAM
16-Mbit (1 M × 16 / 2 M × 8) Static RAM
Features
■
■
High speed: 45 ns/55 ns
Temperature range:
❐
Industrial: –40 °C to +85 °C
Wide voltage range: 1.65 V to 1.95 V, 2.2 V to 3.6 V and 4.5 V
to 5.5 V
Ultra-low standby power
❐
Typical standby current at 25 °C = 1.5
A
❐
Typical standby current at 40 °C = 2.5
A
Ultra-low active power
❐
Active current: I
CC
= 2.2 mA (typical) at f = 1 MHz
Easy memory expansion with CE
1
, CE
2
, and OE Features
Automatic power-down when deselected
CMOS for optimum speed and power
Pb-free 60-pin WLCSP packages
reduces power consumption by 99% when addresses are not
toggling. Place the device into standby mode when deselected
(CE
1
HIGH or CE
2
LOW or both BHE and BLE are HIGH).
The input and output pins (I/O
0
through I/O
15
) are placed in a
high impedance state during the following events:
■
■
■
■
■
The device is deselected (CE
1
HIGH or CE
2
LOW)
Outputs are disabled (OE HIGH)
Byte High Enable and Byte Low Enable are disabled (BHE,
BLE HIGH), or a write operation is in progress (CE
1
LOW, CE
2
HIGH and WE LOW)
■
■
■
■
■
Write to the device by taking Chip Enable (CE
1
LOW and CE
2
HIGH) and Write Enable (WE) inputs LOW. If Byte Low Enable
(BLE) is LOW, then data from I/O pins (I/O
0
through I/O
7
) is
written into the location specified on the address pins (A
0
through
A
19
). If Byte High Enable (BHE) is LOW, then data from the I/O
pins (I/O
8
through I/O
15
) is written into the location specified on
the address pins (A
0
through A
19
).
Read from the device by taking Chip Enables (CE
1
LOW and
CE
2
HIGH) and Output Enable (OE) LOW while forcing the Write
Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data
from the memory location specified by the address pins appears
on I/O
0
to I/O
7
. If Byte High Enable (BHE) is LOW, then data from
memory appears on I/O
8
to I/O
15
. See
Truth Table on page 12
for a complete description of read and write modes.
Functional Description
The CY62167ESL is a high-performance CMOS Static RAM
organized as 1M words by 16 bits. This device features an
advanced circuit design that provides an ultra low active current.
Ultra low active current is ideal for providing More Battery Life
(MoBL
®
) in portable applications such as hand-held devices.
The device also has an automatic power-down feature that
Logic Block Diagram
– CY62167ESL
A
10
A
9
A
8
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
ROW DECODER
DATA IN DRIVERS
1M × 16
RAM ARRAY
SENSE AMPS
I/O
0
–I/O
7
I/O
8
–I/O
15
COLUMN DECODER
CE
2
BHE
Power Down
Circuit
A
11
A
12
A
13
A
14
A
15
A
16
A
17
A
18
A
19
CE
1
BHE
BLE
WE
OE
BLE
CE
2
CE
1
Cypress Semiconductor Corporation
Document Number: 001-95928 Rev. *B
•
198 Champion Court
•
San Jose
,
CA 95134-1709
•
408-943-2600
Revised July 16, 2015
CY62167ESL MoBL
®
Contents
Pin Configurations ........................................................... 3
Product Portfolio .............................................................. 3
Maximum Ratings ............................................................. 4
Operating Range ............................................................... 4
DC Electrical Characteristics .......................................... 4
Capacitance ...................................................................... 5
Thermal Resistance .......................................................... 5
AC Test Loads and Waveforms ....................................... 5
Data Retention Characteristics ....................................... 6
Data Retention Waveform ................................................ 6
AC Switching Characteristics ......................................... 7
Switching Waveforms ...................................................... 8
Truth Table ...................................................................... 12
Ordering Information ...................................................... 13
Ordering Code Definitions ......................................... 13
Package Diagram ............................................................ 14
Acronyms ........................................................................ 15
Document Conventions ................................................. 15
Units of Measure ....................................................... 15
Document History Page ................................................. 16
Sales, Solutions, and Legal Information ...................... 17
Worldwide Sales and Design Support ....................... 17
Products .................................................................... 17
PSoC® Solutions ...................................................... 17
Cypress Developer Community ................................. 17
Technical Support ..................................................... 17
Document Number: 001-95928 Rev. *B
Page 2 of 17
CY62167ESL MoBL
®
Pin Configurations
6
A
B
C
D
E
F
G
H
J
K
NC
Figure 1. 60-Pin WLCSP Pinout (Ball Up View)
[1]
Figure 2. 60-Pin WLCSP Pinout (Ball Down View)
[1]
5
NC
4
NC
3
NC
2
NC
1
NC
1
A
B
C
D
E
F
G
H
J
K
NC
2
NC
3
NC
4
NC
5
NC
6
NC
A0
A4
A11
V
CC
BHE
BLE
BLE
BHE
V
CC
A11
A4
A0
CE1
A5
A19
I/O14
I/O3
I/O15
I/O15
I/O3
I/O14
A19
A5
CE1
WE
A13
A6
I/O4
I/O13
I/O5
I/O5
I/O13
I/O4
A6
A13
WE
V
CC
A14
A7
I/O6
I/O12
V
SS
V
SS
I/O12
I/O6
A7
A14
V
CC
V
SS
A8
A12
V
SS
I/O11
V
CC
V
CC
I/O11
V
SS
A12
A8
V
SS
A1
CE2
A15
I/O10
I/O9
I/O2
I/O2
I/O9
I/O10
A15
CE2
A1
A9
A2
A16
I/O8
I/O7
OE
OE
I/O7
I/O8
A16
A2
A9
A3
A10
A17
A18
I/O1
I/O0
I/O0
I/O1
A18
A17
A10
A3
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
Product Portfolio
Power Dissipation
Product
Range
V
CC
Range (V)
Min
4.5
CY62167ESL
Industrial
2.2
1.65
Typ
5.0
3.0
1.8
Max
5.5
3.6
1.95
45
55
Speed (ns)
Operating I
CC
(mA)
f = 1 MHz
Typ
Max
f = f
max
Typ
Max
Standby I
SB2
(A)
Typ
Max
2.2
4.0
25
30
1.5
12
Notes
1. NC pins are not connected on the die.
Document Number: 001-95928 Rev. *B
Page 3 of 17
CY62167ESL MoBL
®
Maximum Ratings
Exceeding maximum ratings may shorten the useful life of
device. User guidelines are not tested.
Storage temperature ............................... –65 °C to + 150 °C
Ambient temperature with
power applied ......................................... –55 °C to + 125 °C
Supply voltage to ground
potential
[2, 3]
..................................................–0.5 V to 6.0 V
DC voltage applied to outputs
in High Z state
[2, 3]
.............................. –0.5 V to V
CC
+ 0.5 V
DC input voltage
[2, 3]
.......................... –0.5 V to V
CC
+ 0.5 V
Output current into outputs (LOW) ............................. 20 mA
Static discharge voltage
(MIL-STD-883, Method 3015) ................................. >2001 V
Latch-up current ..................................................... >200 mA
Operating Range
Device
CY62167ESL
Range
Industrial
Ambient
Temperature
V
CC
[4]
1.65 V to 1.95 V,
–40 °C to +85 °C 2.2 V to 3.6 V,
4.5 V to 5.5 V
DC Electrical Characteristics
Over the operating range of –40
C
to 85
C
Parameter
Description
Test Conditions
1.65 < V
CC
< 1.95
2.2 < V
CC
< 2.7
2.7 < V
CC
< 3.6
4.5 < V
CC
< 5.5
1.65 < V
CC
< 1.95
2.2 < V
CC
< 2.7
2.7 < V
CC
< 3.6
4.5 < V
CC
< 5.5
1.65 < V
CC
< 1.95
2.2 < V
CC
< 2.7
2.7 < V
CC
< 3.6
4.5 < V
CC
< 5.5
1.65 < V
CC
< 1.95
2.2 < V
CC
< 2.7
2.7 < V
CC
< 3.6
4.5 < V
CC
< 5.5
GND < V
I
< V
CC
GND < V
O
< V
CC
, Output disabled
f = f
max
= 1/t
RC
f = 1 MHz
I
OH
= –0.1 mA
I
OH
= –0.1 mA
I
OH
= –1.0 mA
I
OH
= –1.0 mA
I
OL
= 0.1 mA
I
OL
= 0.1 mA
I
OL
= 2.1 mA
I
OL
= 2.1 mA
Min
1.4
2.0
2.4
2.4
–
–
–
–
1.4
1.8
2.2
2.2
–0.2
–0.3
–0.3
–0.5
–1.0
–1.0
–
–
45/55 ns
Typ
[5]
Max
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
25.0
2.2
–
–
–
–
0.2
0.4
0.4
0.4
V
CC
+ 0.2
V
CC
+ 0.3
V
CC
+ 0.3
V
CC
+ 0.5
0.4
0.6
0.8
0.8
+1.0
+1.0
30.0
4.0
Unit
V
OH
Output HIGH Voltage
V
OL
Output LOW Voltage
V
V
IH
Input HIGH Voltage
V
IL
I
IX
I
OZ
I
CC
Input LOW Voltage
Input Leakage Current
Output Leakage Current
V
CC
Operating Supply
Current
A
mA
V
CC
= Vcc Max.
I
OUT
= 0 mA,
CMOS levels
I
SB1[6]
I
SB2[6]
CE
1
> V
CC
– 0.2 V or CE
2
< 0.2 V or (BHE and BLE) > V
CC
Automatic CE Power-down – 0.2 V, V
IN
> V
CC
– 0.2 V, V
IN
< 0.2 V,
Current – CMOS Inputs
f = f
max
(address and data only), f = 0 (OE, and WE),
V
CC
= V
CC(max)
25 °C
[5]
CE
1
> V
CC
– 0.2V or CE
2
< 0.2 V
Automatic CE Power-down or (BHE and BLE) > V
CC
– 0.2 V,
40 °C
[5]
Current – CMOS Inputs
V
IN
> V
CC
– 0.2 V or V
IN
< 0.2 V,
85 °C
f = 0, V
CC
= V
CC(max)
–
–
–
–
–
1.5
2.5
–
12.0
4.0
7.0
12.0
A
Notes
2. V
IL(min)
= –2.0 V for pulse durations less than 20 ns.
3. V
IH(max)
= V
CC
+ 0.75 V for pulse durations less than 20 ns.
4. Full Device AC operation assumes a 100
s
ramp time from 0 to V
CC(min)
and 200
s
wait time after V
CC
stabilization.
5. These values are included for reference only and are not guaranteed or tested. Typical values are measured at V
CC
= V
CC(typ)
, T
A
= 25 °C.
6. Chip enables (CE
1
and CE
2
) and byte enables (BHE and BLE) must be tied to CMOS levels to meet the I
SB1
/I
SB2
/ I
CCDR
spec. Other inputs can be left floating.
Document Number: 001-95928 Rev. *B
Page 4 of 17
CY62167ESL MoBL
®
Capacitance
Parameter
[7]
C
IN
C
OUT
Description
Input Capacitance
Output Capacitance
Test Conditions
T
A
= 25 °C, f = 1 MHz, V
CC
= V
CC(typ)
Max
10.0
10.0
Unit
pF
pF
Thermal Resistance
Parameter
[7]
JA
JC
Description
Thermal resistance
(junction to ambient)
Thermal resistance
(junction to case)
Test Conditions
Still Air, soldered on a 3 × 4.5 inch, four-layer printed
circuit board
WLCSP
Package
26.54
0.11
Unit
C/W
C/W
AC Test Loads and Waveforms
Figure 3. AC Test Loads and Waveforms
V
CC
OUTPUT
R1
V
CC
[8]
GND
10%
R2
ALL INPUT PULSES
90%
90%
10%
Fall Time = 1 V/ns
30 pF
INCLUDING
JIG AND
SCOPE
Rise Time = 1 V/ns
Equivalent to: THÉVENIN EQUIVALENT
R
TH
OUTPUT
V
TH
Parameters
R1
R2
R
TH
V
TH
1.65 V to 1.95 V
13500
10800
6000
0.80
2.2 V to 2.7 V
16667
15385
8000
1.20
2.7 V to 3.6 V
1103
1554
645
1.75
4.5 V to 5.5 V
1800
990
639
1.77
Unit
V
Notes
7. Tested initially and after any design or process changes that may affect these parameters.
8. Test conditions for all parameters other than tri-state parameters assume signal transition time of 1 V/ns, timing reference level of 1.5V (for V
CC
> 3V) and V
CC
/2 (for
V
CC
< 3V), and input pulse levels of 0 to 3V (for V
CC
> 3V) and 0 to V
CC
(V
CC
< 3V) and output loading of the specified I
OL
/I
OH
as shown.
Document Number: 001-95928 Rev. *B
Page 5 of 17
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
