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CY62157E MoBL
®
8-Mbit (512 K × 16) Static RAM
8-Mbit (512 K × 16) Static RAM
Features
■
Very high speed: 45 ns
❐
Industrial: –40 °C to +85 °C
❐
Automotive-E: –40 °C to +125 °C
Wide voltage range: 4.5 V–5.5 V
Ultra low standby power
❐
Typical standby current: 2
A
❐
Maximum standby current: 8
A
(Industrial)
Ultra low active power
❐
Typical active current: 1.8 mA at f = 1 MHz
Ultra low standby power
Easy memory expansion with CE
1
, CE
2
and OE features
Automatic power down when deselected
CMOS for optimum speed and power
Available in Pb-free 44-pin TSOP II and 48-ball VFBGA
package
■
■
applications such as cellular telephones. The device also has an
automatic power down feature that significantly reduces power
consumption when addresses are not toggling. Place the device
into standby mode when deseleMoBL
®
cted (CE
1
HIGH or CE
2
LOW or both BHE and BLE are HIGH). The input or output pins
(I/O
0
through I/O
15
) are placed in a high impedance state when:
■
■
■
■
Deselected (CE
1
HIGH or CE
2
LOW)
Outputs are disabled (OE HIGH)
Both Byte High Enable and Byte Low Enable are disabled
(BHE, BLE HIGH)
Write operation is active (CE
1
LOW, CE
2
HIGH and WE LOW)
■
■
■
■
■
■
To write to the device, take Chip Enable (CE
1
LOW and CE
2
HIGH) and Write Enable (WE) inputs LOW. If Byte Low Enable
(BLE) is LOW, then data from I/O pins (I/O
0
through I/O
7
), is
written into the location specified on the address pins (A
0
through
A
18
). If Byte High Enable (BHE) is LOW, then data from I/O pins
(I/O
8
through I/O
15
) is written into the location specified on the
address pins (A
0
through A
18
).
To read from the device, take Chip Enable (CE
1
LOW and CE
2
HIGH) and Output Enable (OE) LOW while forcing the Write
Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data
from the memory location specified by the address pins appear
on I/O
0
to I/O
7
. If Byte High Enable (BHE) is LOW, then data from
memory appears on I/O
8
to I/O
15
. See
Truth Table on page 12
for a complete description of read and write modes.
Functional Description
The CY62157E is a high performance CMOS static RAM
organized as 512K words by 16 bits. This device features
advanced circuit design to provide ultra low active current. This
is ideal for providing More Battery Life (MoBL
®
) in portable
Logic Block Diagram
DATA IN DRIVERS
A
10
A
9
A
8
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
ROW DECODER
512K x 16
RAM Array
SENSE AMPS
I/O
0
–I/O
7
I/O
8
–I/O
15
CE
2
Power Down
Circuit
CE
1
COLUMN DECODER
BHE
WE
A
11
A
12
A
13
A
15
A
14
A
16
A
17
A
18
BHE
BLE
OE
BLE
CE
2
CE
1
Cypress Semiconductor Corporation
Document #: 38-05695 Rev. *H
•
198 Champion Court
•
San Jose
,
CA 95134-1709
•
408-943-2600
Revised May 30, 2011
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CY62157E MoBL
®
Contents
Product Portfolio ..............................................................3
Pin Configuration .............................................................3
Maximum Ratings .............................................................4
Operating Range ...............................................................4
Electrical Characteristics .................................................4
Capacitance ......................................................................5
Thermal Resistance ..........................................................5
AC Test Loads and Waveforms .......................................5
Data Retention Characteristics .......................................6
Data Retention Waveform ................................................6
Switching Characteristics ................................................7
Switching Waveforms ......................................................8
Read Cycle No. 1 (Address Transition Controlled) .....8
Read Cycle No. 2 (OE Controlled) ..............................8
Write Cycle No. 1 (WE Controlled) ..............................9
Write Cycle No. 2 (CE1 or CE2 Controlled) ..............10
Write Cycle No. 3 (WE Controlled, OE LOW) ............11
Write Cycle No. 4
(BHE/BLE Controlled, OE LOW) ......................................11
Truth Table ......................................................................12
Ordering Information ......................................................13
Ordering Code Definitions .........................................13
Package Diagrams ..........................................................14
Acronyms ........................................................................16
Document Conventions .................................................16
Units of Measure .......................................................16
Document History Page .................................................17
Sales, Solutions, and Legal Information ......................18
Worldwide Sales and Design Support .......................18
Products ....................................................................18
PSoC Solutions .........................................................18
Document #: 38-05695 Rev. *H
Page 2 of 18
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CY62157E MoBL
®
Product Portfolio
Power Dissipation
Product
Range
Min
CY62157ELL
CY62157ELL
Industrial
Automotive
4.5
4.5
V
CC
Range (V)
Typ
[1]
5.0
5.0
Max
5.5
5.5
45
55
Speed
(ns)
Typ
[1]
1.8
1.8
Operating I
CC
, (mA)
f = 1 MHz
Max
3
4
f = f
max
Typ
[1]
18
18
Max
25
35
Standby, I
SB2
(A)
Typ
[1]
2
2
Max
8
30
Pin Configuration
[2, 3]
44-pin TSOP II
Top View
A
4
A
3
A
2
A
1
A
0
CE
I/O
0
I/O
1
I/O
2
I/O
3
V
CC
V
SS
I/O
4
I/O
5
I/O
6
I/O
7
WE
A
18
A
17
A
16
A
15
A
14
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A
5
A
6
A
7
OE
BHE
BLE
I/O
15
I/O
14
I/O
13
I/O
12
V
SS
V
CC
I/O
11
I/O
10
I/O
9
I/O
8
A
8
A
9
A
10
A
11
A
12
A
13
1
BLE
I/O
8
I/O
9
V
SS
V
CC
I/O
14
I/O
15
A
18
2
OE
BHE
I/O
10
I/O
11
I/O
12
I/O
13
NC
A
8
48-ball VFBGA
Top View
4
3
A
0
A
3
A
5
A
17
NC
A
14
A
12
A
9
A
1
A
4
A
6
A
7
A
16
A
15
A
13
A
10
5
A
2
CE
1
I/O
1
I/O
3
I/O
4
I/O
5
WE
A
11
6
CE
2
I/O
0
I/O
2
Vcc
Vss
I/O
6
I/O
7
NC
A
B
C
D
E
F
G
H
Notes
1. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
CC
= V
CC(typ)
, T
A
= 25 °C.
2. NC pins are not connected on the die.
3. The 44-pin TSOP II package has only one chip enable (CE) pin.
Document #: 38-05695 Rev. *H
Page 3 of 18
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CY62157E MoBL
®
Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. User guidelines are not tested.
Storage Temperature ............................. –65 °C to + 150 °C
Ambient Temperature with
Power Applied ........................................ –55 °C to + 125 °C
Supply Voltage to Ground
Potential .........................................................–0.5 V to 6.0 V
DC Voltage Applied to Outputs
in High Z State
[4, 5]
.........................................–0.5 V to 6.0 V
DC Input Voltage
[4, 5]
..................................... –0.5 V to 6.0 V
Output Current into Outputs (LOW) ............................20 mA
Static Discharge Voltage ........................................> 2001 V
(MIL-STD-883, Method 3015)
Latch up Current ....................................................> 200 mA
Operating Range
Device
CY62157ELL
Range
Industrial
Ambient
Temperature
V
CC
[6]
–40 °C to +85 °C 4.5 V to 5.5 V
Automotive –40 °C to +125 °C
Electrical Characteristics
Over the Operating Range
Parameter
V
OH
V
OL
V
IH
V
IL
I
IX
I
OZ
I
CC
I
SB1 [8]
Description
Output HIGH
Voltage
Output LOW
Voltage
Input HIGH
Voltage
Input LOW
Voltage
Input Leakage
Current
Output Leakage
Current
V
CC
Operating
Supply Current
Automatic CE
Power Down
Current — CMOS
Inputs
Automatic CE
Power Down
Current — CMOS
Inputs
Test Conditions
I
OH
= –1 mA
I
OL
= 2.1 mA
V
CC
= 4.5 V to 5.5 V
V
CC
= 4.5 V to 5.5 V
GND < V
I
< V
CC
GND < V
O
< V
CC
, Output Disabled
f = f
max
= 1/t
RC
f = 1 MHz
V
CC
= V
CC(max)
I
OUT
= 0 mA
CMOS levels
45 ns (Industrial)
Min
2.4
–
2.2
–0.5
–1
–1
–
–
–
Typ
[7]
–
–
–
–
–
–
18
1.8
2
Max
–
0.4
V
CC
+ 0.5
0.8
+1
+1
25
3
8
55 ns (Automotive)
Min
2.4
–
2.2
–0.5
–4
–4
–
–
–
Typ
[7]
–
–
–
–
–
–
18
1.8
2
Max
–
0.4
V
CC
+ 0.5
0.8
+4
+4
35
4
30
A
Unit
V
V
V
V
A
A
mA
CE
1
> V
CC
0.2
V or CE
2
< 0.2 V
or (BHE and BLE) > V
CC
– 0.2 V,
V
IN
> V
CC
– 0.2 V, V
IN
< 0.2 V,
f = f
max
(Address and Data Only),
f = 0 (OE and WE), V
CC
= V
CC(max)
CE
1
> V
CC
– 0.2 V or CE
2
< 0.2 V
or (BHE and BLE) > V
CC
– 0.2 V,
V
IN
> V
CC
– 0.2 V or V
IN
< 0.2 V,
f = 0, V
CC
= V
CC(max)
I
SB2 [8]
–
2
8
–
2
30
A
Notes
4. V
IL(min)
= –2.0 V for pulse durations less than 20 ns for I < 30 mA.
5. V
IH(max)
= V
CC
+ 0.75 V for pulse durations less than 20 ns.
6. Full device AC operation assumes a 100
s
ramp time from 0 to V
CC
(min) and 200
s
wait time after V
CC
stabilization.
7. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
CC
= V
CC(typ)
, T
A
= 25 °C.
8. Chip enables (CE
1
and CE
2
) and byte enables (BHE and BLE) need to be tied to CMOS levels to meet the I
SB1
/ I
SB2
/ I
CCDR
spec. Other inputs can be left floating.
Document #: 38-05695 Rev. *H
Page 4 of 18
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