DDR DRAM, 32MX72, 0.65ns, CMOS, PBGA208, 18 X 20 MM, 1 MM PITCH, PLASTIC, BGA-208
参数名称 | 属性值 |
是否Rohs认证 | 不符合 |
包装说明 | BGA, BGA208,11X19,40 |
Reach Compliance Code | unknown |
访问模式 | FOUR BANK PAGE BURST |
最长访问时间 | 0.65 ns |
其他特性 | AUTO/SELF REFRESH |
最大时钟频率 (fCLK) | 266 MHz |
I/O 类型 | COMMON |
JESD-30 代码 | R-PBGA-B208 |
内存密度 | 2415919104 bit |
内存集成电路类型 | DDR DRAM |
内存宽度 | 72 |
功能数量 | 1 |
端口数量 | 1 |
端子数量 | 208 |
字数 | 33554432 words |
字数代码 | 32000000 |
工作模式 | SYNCHRONOUS |
最高工作温度 | 70 °C |
最低工作温度 | |
组织 | 32MX72 |
输出特性 | 3-STATE |
封装主体材料 | PLASTIC/EPOXY |
封装代码 | BGA |
封装等效代码 | BGA208,11X19,40 |
封装形状 | RECTANGULAR |
封装形式 | GRID ARRAY |
峰值回流温度(摄氏度) | 225 |
电源 | 1.8 V |
认证状态 | Not Qualified |
刷新周期 | 8192 |
座面最大高度 | 3.7 mm |
自我刷新 | YES |
最大待机电流 | 0.035 A |
最大压摆率 | 1.7 mA |
最大供电电压 (Vsup) | 1.9 V |
最小供电电压 (Vsup) | 1.7 V |
标称供电电压 (Vsup) | 1.8 V |
表面贴装 | YES |
技术 | CMOS |
温度等级 | COMMERCIAL |
端子形式 | BALL |
端子节距 | 1 mm |
端子位置 | BOTTOM |
处于峰值回流温度下的最长时间 | 30 |
Base Number Matches | 1 |
W3H32M72E-533SBC | W3H32M72E-533SBM | W3H32M72E-533SBI | W3H32M72E-400SBM | W3H32M72E-667SBI | W3H32M72E-667SBC | |
---|---|---|---|---|---|---|
描述 | DDR DRAM, 32MX72, 0.65ns, CMOS, PBGA208, 18 X 20 MM, 1 MM PITCH, PLASTIC, BGA-208 | DDR DRAM, 32MX72, 0.65ns, CMOS, PBGA208, 18 X 20 MM, 1 MM PITCH, PLASTIC, BGA-208 | DDR DRAM, 32MX72, 0.65ns, CMOS, PBGA208, 18 X 20 MM, 1 MM PITCH, PLASTIC, BGA-208 | DDR DRAM, 32MX72, 0.6ns, CMOS, PBGA208, 18 X 20 MM, 1 MM PITCH, PLASTIC, BGA-208 | DDR DRAM, 32MX72, 0.65ns, CMOS, PBGA208, 18 X 20 MM, 1 MM PITCH, PLASTIC, BGA-208 | DDR DRAM, 32MX72, 0.65ns, CMOS, PBGA208, 18 X 20 MM, 1 MM PITCH, PLASTIC, BGA-208 |
是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
包装说明 | BGA, BGA208,11X19,40 | BGA, BGA208,11X19,40 | BGA, BGA208,11X19,40 | BGA, BGA208,11X19,40 | BGA, BGA208,11X19,40 | BGA, BGA208,11X19,40 |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown |
访问模式 | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST |
最长访问时间 | 0.65 ns | 0.65 ns | 0.65 ns | 0.6 ns | 0.65 ns | 0.65 ns |
其他特性 | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH |
最大时钟频率 (fCLK) | 266 MHz | 266 MHz | 266 MHz | 200 MHz | 333 MHz | 333 MHz |
I/O 类型 | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
JESD-30 代码 | R-PBGA-B208 | R-PBGA-B208 | R-PBGA-B208 | R-PBGA-B208 | R-PBGA-B208 | R-PBGA-B208 |
内存密度 | 2415919104 bit | 2415919104 bit | 2415919104 bit | 2415919104 bit | 2415919104 bit | 2415919104 bit |
内存集成电路类型 | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM |
内存宽度 | 72 | 72 | 72 | 72 | 72 | 72 |
功能数量 | 1 | 1 | 1 | 1 | 1 | 1 |
端口数量 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 208 | 208 | 208 | 208 | 208 | 208 |
字数 | 33554432 words | 33554432 words | 33554432 words | 33554432 words | 33554432 words | 33554432 words |
字数代码 | 32000000 | 32000000 | 32000000 | 32000000 | 32000000 | 32000000 |
工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
最高工作温度 | 70 °C | 125 °C | 85 °C | 125 °C | 85 °C | 70 °C |
最低工作温度 | - | -55 °C | -40 °C | -55 °C | -40 °C | - |
组织 | 32MX72 | 32MX72 | 32MX72 | 32MX72 | 32MX72 | 32MX72 |
输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装代码 | BGA | BGA | BGA | BGA | BGA | BGA |
封装等效代码 | BGA208,11X19,40 | BGA208,11X19,40 | BGA208,11X19,40 | BGA208,11X19,40 | BGA208,11X19,40 | BGA208,11X19,40 |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | GRID ARRAY | GRID ARRAY | GRID ARRAY | GRID ARRAY | GRID ARRAY | GRID ARRAY |
峰值回流温度(摄氏度) | 225 | 225 | 225 | 225 | 225 | 225 |
电源 | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
刷新周期 | 8192 | 8192 | 8192 | 8192 | 8192 | 8192 |
座面最大高度 | 3.7 mm | 3.7 mm | 3.7 mm | 3.7 mm | 3.7 mm | 3.7 mm |
自我刷新 | YES | YES | YES | YES | YES | YES |
最大待机电流 | 0.035 A | 0.035 A | 0.035 A | 0.035 A | 0.035 A | 0.035 A |
最大压摆率 | 1.7 mA | 1.7 mA | 1.7 mA | 1.7 mA | 1.7 mA | 1.7 mA |
最大供电电压 (Vsup) | 1.9 V | 1.9 V | 1.9 V | 1.9 V | 1.9 V | 1.9 V |
最小供电电压 (Vsup) | 1.7 V | 1.7 V | 1.7 V | 1.7 V | 1.7 V | 1.7 V |
标称供电电压 (Vsup) | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V |
表面贴装 | YES | YES | YES | YES | YES | YES |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
温度等级 | COMMERCIAL | MILITARY | INDUSTRIAL | MILITARY | INDUSTRIAL | COMMERCIAL |
端子形式 | BALL | BALL | BALL | BALL | BALL | BALL |
端子节距 | 1 mm | 1 mm | 1 mm | 1 mm | 1 mm | 1 mm |
端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
处于峰值回流温度下的最长时间 | 30 | 30 | 30 | 30 | 30 | 30 |
Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 |
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