DATA SHEET
HAL 810
of typically 5 V in the ambient temperature range from
−
40 °C up to 150 °C. The HAL 810 is available in the
very small leaded package TO-92UT.
Programmable Linear Hall Effect Sensor
Release Note: Revision bars indicate significant
changes to the previous edition.
1. Introduction
The HAL 810 is a new member of the Micronas family
of programmable linear Hall sensors. The linear output
is provided as the duty cycle of a pulse-width modu-
lated output signal (PWM signal). As an extension to
the HAL 800, it offers open-circuit detection.
The HAL 810 is a universal magnetic field sensor with
a linear output based on the Hall effect. The IC is
designed and produced in sub-micron CMOS technol-
ogy and can be used for angle or distance measure-
ments if combined with a rotating or moving magnet.
The major characteristics, such as magnetic field
range, sensitivity, output quiescent signal (output duty
cycle at B = 0 mT), and output duty cycle range are
programmable in a non-volatile memory.
The HAL 810 features a temperature-compensated
Hall plate with chopped offset compensation, an A/D
converter, digital signal processing, an EEPROM
memory with redundancy and lock function for the cali-
bration data, a serial interface for programming the
EEPROM, and protection devices at all pins. The inter-
nal digital signal processing is of great benefit as ana-
log offsets, temperature shifts, and mechanical stress
do not lower the sensor accuracy.
The HAL 810 is programmable by modulating the sup-
ply voltage. No additional programming pin is needed.
The easy programmability allows a 2-point calibration
by adjusting the output signal directly to the input sig-
nal (like mechanical angle, distance, or current). Indi-
vidual adjustment of each sensor during the cus-
tomer’s manufacturing process is possible. With this
calibration procedure, the tolerances of the sensor, the
magnet, and the mechanical positioning can be com-
pensated in the final assembly. This offers a low-cost
alternative for all applications that presently need
mechanical adjustment or laser trimming for calibrating
the system.
In addition, the temperature compensation of the Hall
IC can be suited to all common magnetic materials by
programming first and second order temperature coef-
ficients of the Hall sensor sensitivity. This enables
operation over the full temperature range with high
accuracy.
The calculation of the individual sensor characteristics
and the programming of the EEPROM memory can
easily be done with a PC and the application kit from
Micronas.
The sensor is designed for hostile industrial and auto-
motive applications and operates with a supply voltage
1.1. Major Applications
Due to the sensor’s versatile programming character-
istics, the HAL 810 is the optimal system solution for
applications such as:
– contactless potentiometers,
– rotary sensors,
– distance measurements,
– magnetic field and current measurement.
WARNING:
DO NOT USE THESE SENSORS IN LIFE-
SUPPORTING SYSTEMS, AVIATION, AND
AEROSPACE APPLICATIONS.
1.2. Features
– high-precision linear Hall effect sensor with digital
signal processing
– PWM output signal with a refresh rate of typically
125 Hz and up to 11 Bit resolution
– multiple programmable magnetic characteristics in a
non-volatile memory (EEPROM) with redundancy
and lock function
– open-circuit feature (ground and supply line break
detection)
– temperature characteristics programmable for
matching all common magnetic materials
– programmable clamping function
– programming via modulation of the supply voltage
– operation from
−40
°C up to 150 °C
ambient temperature
– operation with 4.5 V to 5.5 V supply voltage in spec-
ification and functions with up to 8.5 V
– total error < 2.0% over operating voltage range and
temperature range
– operation with static magnetic fields and dynamic
magnetic fields
– overvoltage and reverse-voltage protection at all pins
– magnetic characteristics extremely robust against
mechanical stress
– short-circuit protected push-pull output
– EMC and ESD optimized design
Micronas
Nov. 22, 2002; 6251-536-2DS
3
HAL 810
1.3. Marking Code
The HAL 810 has a marking on the package surface
(branded side). This marking includes the name of the
sensor and the temperature range.
Type
Temperature Range
A
HAL 810
810A
K
810K
1.6. Solderability
DATA SHEET
Package TO-92UT: according to IEC68-2-58
During soldering reflow processing and manual
reworking, a component body temperature of 260 °C
should not be exceeded.
Components stored in the original package should pro-
vide a shelf life of at least 12 months, starting from the
date code printed on the package labels, even in envi-
ronments as extreme as 40 °C and 90% relative
humidity.
1.3.1. Special Marking of Prototype Parts
Prototype parts are coded with an underscore beneath
the temperature range letter on each IC. They may be
used for lab experiments and design-ins but are not
intended for the use in qualification tests or as produc-
tion parts.
1.7. Pin Connections and Short Descriptions
Pin
No.
1
1.4. Operating Junction Temperature Range (T
J
)
The Hall sensors from Micronas are specified to the
chip temperature (junction temperature T
J
).
A:
TJ =
−40
°C to +170 °C
K:
TJ =
−40
°C to +140 °C
The relationship between ambient temperature (T
A
)
and junction temperature is explained in Section 4.4.
on page 18.
2
3
Pin Name
VDD
GND
OUT
OUT
Type
IN
Short Description
Supply Voltage and
Programming Pin
Ground
Push-Pull Output
1
V
DD
OUT
3
1.5. Hall Sensor Package Codes
2
GND
HALXXXPA-T
Temperature Range: A or K
Package: UT for TO-92UT
Type: 810
Example:
HAL810UT-K
810
→
Type:
→
Package:
TO-92UT
→
Temperature Range: T
J
=
−40
°C to +140 °C
Hall sensors are available in a wide variety of packag-
ing versions and quantities. For more detailed informa-
tion, please refer to the brochure: “Ordering Codes for
Hall Sensors”.
Fig. 1–1:
Pin configuration
4
Nov. 22, 2002; 6251-536-2DS
Micronas
DATA SHEET
HAL 810
ates a PWM output signal. After detecting a command,
the sensor reads or writes the memory and answers
with a digital signal on the output pin. The PWM output
is switched off during the communication.
The open-circuit detection provides a defined output
voltage if the V
DD
or GND line is broken. Internal tem-
perature compensation circuitry and the chopped off-
set compensation enables operation over the full tem-
perature range with minimal changes in accuracy and
high offset stability. The circuitry also rejects offset
shifts due to mechanical stress from the package. The
non-volatile memory consists of redundant EEPROM
cells. In addition, the sensor IC is equipped with
devices for overvoltage and reverse-voltage protection
at all pins.
2. Functional Description
2.1. General Function
The HAL 810 is a monolithic integrated circuit which
provides a pulse-width modulated output signal
(PWM). The duty cycle of the PWM signal is propor-
tional to the magnetic flux through the Hall plate.
The external magnetic field component perpendicular
to the branded side of the package generates a Hall
voltage. The Hall IC is sensitive to magnetic north and
south polarity. This voltage is converted to a digital
value, processed in the Digital Signal Processing Unit
(DSP) according to the settings of the EEPROM regis-
ters, converted to a pulse-width modulated output sig-
nal, and stabilized by a push-pull output transistor
stage. The function and the parameters for the DSP
are explained in Section 2.2. on page 7.
The setting of the LOCK register disables the program-
ming of the EEPROM memory for all time. This regis-
ter cannot be reset.
As long as the LOCK register is not set, the output
characteristics can be adjusted by programming the
EEPROM registers. The IC is addressed by modulat-
ing the supply voltage (see Fig. 2–1). In the supply
voltage range from 4.5 V to 5.5 V, the sensor gener-
HAL
810
8
V
DD
(V)
7
6
5
V
DD
V
OUT
(V)
V
DD
GND
OUT
digital protocol
PWM
Fig. 2–1:
Programming with V
DD
modulation
V
DD
Internally
stabilized
Supply and
Protection
Devices
Temperature
Dependent
Bias
Oscillator
Open-circuit
detection
Protection
Devices
Switched
Hall Plate
A/D
Converter
Digital
Signal
Processing
Output
Conditioning
100
Ω
OPA
OUT
EEPROM Memory
Supply
Level
Detection
Lock Control
GND
Digital
Output
10 kΩ
Fig. 2–2:
HAL 810 block diagram
Micronas
Nov. 22, 2002; 6251-536-2DS
5
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