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PE70FG80

产品描述Silicon Controlled Rectifier, 70000mA I(T), 800V V(RRM)
产品类别模拟混合信号IC    触发装置   
文件大小95KB,共2页
制造商SanRex
官网地址http://www.ecomallbiz.com/sanrex
下载文档 详细参数 全文预览

PE70FG80概述

Silicon Controlled Rectifier, 70000mA I(T), 800V V(RRM)

PE70FG80规格参数

参数名称属性值
包装说明,
Reach Compliance Codeunknown
最大直流栅极触发电流50 mA
最大直流栅极触发电压3 V
快速连接描述G-K-AK
螺丝端子的描述A-K-AK
最大漏电流20 mA
通态非重复峰值电流1600 A
最大通态电流70000 A
最高工作温度125 °C
最低工作温度-40 °C
重复峰值反向电压800 V
Base Number Matches1

文档预览

下载PDF文档
THYRISTOR MODULE
PK
(PD,PE)
70FG
UL;E76102 M)
Power Thyristor/Diode Module
PK70FG
series are designed for various rectifier circuits
and power controls. For your circuit application, following internal connections and wide
voltage ratings up to 1600V are available. and electrically isolated mounting base make
your mechanical design easy.
2φ6.
- 0
2.
50
1.
20
92.
2 . 2 . 2 .
00 00 00
1.
75
3. 7. 3.
5 5 5
65
MAX 2 .
90
K2G2
I
T(AV
)
70A, I
T(RMS)
110A, I
TSM
di/dt
dv/dt
1600A
Internal Configurations
K2
G2
3
2
100A/
μs
1000V/
μs
M ×1
5 0
K2
G2
A1K2
(K2)
K1
(A2)
(Applications)
Various rectifiers
AC/DC motor drives
Heater controls
Light dimmers
Static switches
10
3±
0.
A1K2
(K2)
K1
(A2) G1
1
3
2
1
1.
95
40
28 4-# 1 TAB
10
NAME PLATE
PK
K2
3
2
PE
8 .± .
00 02
1
A1K2
(K2)
K1
(A2) G1
K G
PD
Unit:
A
■Maximum
Ratings
Ratings
Symbol
Item
PK70FG40
PD70FG40
PE70FG40
400
480
400
PK70FG80
PD70FG80
PE70FG80
800
960
800
Conditions
(Tj=25℃
unless otherwise specified)
PK70FG120
PD70FG120
PE70FG120
1200
1300
1200
PK70FG160
PD70FG160
PE70FG160
1600
1700
1600
Ratings
70
110
1460/1600
10660
10
1
3
10
5
I
G
=100mA,
D
1 2
V
DRM
G
/dt=0.1A/
V
di
μs
A.C. 1minute
100
2500
−40 to +125
−40 to +125
2.7(28)
2.7(28)
170
Unit
V
RRM
V
RSM
V
DRM
Symbol
*Repetitive
Peak Reverse Voltage
*Non-Repetitive
Peak Reverse Voltage
*Repetitive
Peak off-state Voltage
Item
V
V
V
Unit
A
A
A
A
2
S
W
W
A
V
V
A/
μs
V
N½m
(㎏f½B)
g
I
T AV)
*Average
On-state Current
I
T RMS)
*R.M.S.
On-state Current
Single phase, half wave, 180°
conduction, Tc=84℃
Single phase, half wave, 180°
conduction, Tc=84℃
1
2
I
TSM
I
2
t
P
GM
(AV)
P
G
*Surge
On-state Current
*I
2
t
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage (Forward)
Peak Gate Voltage (Reverse)
Critical Rate of Rise of On-state Current
*Isolation
Breakdown Voltage
(R.M.S.)
*Operating
Junction Temperature
*Storage
Temperature
Mounting
Torque
Mass
Cycle, 50/60H
Z
, Peak Value, non-repetitive
Value for one cycle surge current
I
FGM
V
FGM
V
RGM
di/dt
V
ISO
Tj
Tstg
Mounting
(M5)
Recommended Value 1.5-2.5(15-25)
Terminal M5) Recommended Value 1.5-2.5(15-25)
Typical Value
■Electrical
Characteristics
Symbol
I
DRM
I
RRM
V
TM
I
GT
V
GT
V
GD
dv/dt
Item
Repetitive Peak off-state Current,max
*Repetitive
Peak Reverse Current,max
*On-state
Voltage,max
Gate Trigger Current,max
Gate Trigger Voltage,max
Gate Non-Trigger Voltage,min
Critical Rate of Rise of off-state Voltage,min
Conditions
Tj=125℃,V
D
=V
DRM
Tj=125℃,V
D
=V
DRM
I
T
=210A
V
D
=6V,I
T
=1A
V
D
=6V,I
T
=1A
Tj=125℃,V
D
1 2
V
DRM
Tj=125℃,V
D
2 3
V
DRM
Junction to case
Ratings
20
20
1.6
50
3
0.25
1000
0.37
Unit
mA
mA
V
mA
V
V
V/
μs
℃/W
Rth j-c)*Thermal Impedance,max
*mark:Thyristor
and Diode part. No mark:Thyristor part
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com

 
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