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PE200HB120

产品描述Silicon Controlled Rectifier, 200000mA I(T), 1200V V(RRM)
产品类别模拟混合信号IC    触发装置   
文件大小582KB,共2页
制造商SanRex
官网地址http://www.ecomallbiz.com/sanrex
下载文档 详细参数 选型对比 全文预览

PE200HB120概述

Silicon Controlled Rectifier, 200000mA I(T), 1200V V(RRM)

PE200HB120规格参数

参数名称属性值
包装说明,
Reach Compliance Codeunknown
最大直流栅极触发电流100 mA
最大直流栅极触发电压3 V
快速连接描述G-GR-AK
螺丝端子的描述A-K-AK
最大维持电流50 mA
最大漏电流50 mA
通态非重复峰值电流5000 A
最大通态电流200000 A
最高工作温度125 °C
最低工作温度-40 °C
重复峰值反向电压1200 V
Base Number Matches1

文档预览

下载PDF文档
THYRISTOR MODULE
PK
(PD,PE)
200HB
UL;E76102 M
Power Thyristor/Diode Module
PK200HB
series are designed for various rectifier
circuits and power controls. For your circuit application. following internal connections
and wide voltage ratings up to 1,600V are available.
Isolated mounting base
I
T AV
200A, I
T RMS
310A, I
TSM
5500A
di/dt 200 A/ s
dv/dt 500V/ s
Applications
Various rectifiers
AC/DC motor drives
Heater controls
Light dimmers
Static switches
PK
Internal Configurations
PD
PE
Unit
A
Maximum Ratings
Ratings
Symbol
V
RRM
V
RSM
V
DRM
Symbol
I
T
I
T
AV
RMS
Item
Repetitive Peak Reverse Voltage
Non-Repetitive Peak Reverse Voltage
Repetitive Peak Off-State Voltage
Item
Average On-State Current
R.M.S. On-State Current
Surge On-State Current
I
2
t
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage Forward
Peak Gate Voltage Reverse
Critical Rate of Rise of On-State Current
Isolation Breakdown Voltage R.M.S.
Operating Junction Temperature
Storage Temperature
Mounting
Torque
Mass
Mounting M5
Terminal M8
PK200HB120
PE200HB120
PD200HB120
PK200HB160
PE200HB160
PD200HB160
Unit
V
V
V
1200
1300
1200
Conditions
Single phase, half wave, 180 conduction, Tc 74
Single phase, half wave, 180 conduction, Tc 74
1
1600
1700
1600
Ratings
200
310
5000/5500
125000
10
3
3
10
5
Unit
A
A
A
A
2
S
W
W
A
V
V
A/ s
V
I
TSM
I
2
t
P
GM
P
G
AV
50Hz/60Hz, peak Value, non-reqetitive
Value for one cycle of surge current
2
cycle,
I
FGM
V
FGM
V
RGM
di/dt
V
ISO
Tj
Tstg
I
G
100mA Tj 25
A.C. 1 minute
V
D
1
2
V
DRM
dI
G
/dt
0.1A/ s
40
40
200
2500
125
125
Recommended Value 1.5 2.5 15 25
Recommended Value 8.8 10
Typical Value
90 105
2.7 28
11 115
510
N
f
B
g
Electrical Characteristics
Symbol
I
DRM
I
RRM
V
TM
I
GT
/V
GT
V
GD
tgt
dv/dt
I
H
I
L
Rth j-c
Item
Repetitive Peak Off-State Current, max.
Repetitive Peak Reverse Current, max.
Peak On-State Voltage, max.
Gate Trigger Current/Voltage, max.
Non-Trigger Gate, Voltage. min.
Turn On Time, max.
Critical Rate of Rise of Off-State Voltage, min.
Holding Current, typ.
Lutching Current, typ.
Thermal Impedance, max.
Conditions
at V
DRM
, Single phase, half wave, Tj 125
at V
DRM
, Single phase, half wave, Tj 125
On-State Current 750A, Tj 125
Tj 25
Tj 125
Tj 125
Tj 25
Tj 25
Junction to case
I
T
1A V
D
6V
V
D
V
D
1
2
V
DRM
Ratings
50
50
1.50
100/3
0.25
Unit
mA
mA
V
mA/V
V
s
V/ s
mA
mA
/W
Inst. measurement
I
T
250A I
G
100mA Tj 25
2
3
V
DRM
V
D
1
2
V
DRM
dI
G
/dt
0.1A/ s
10
500
50
100
0.18
Exponential wave.
mark Thyristor and Diode part. No mark Thyristor part
29

PE200HB120相似产品对比

PE200HB120 PD200HB120 PD200HB160 PK200HB120 PK200HB160
描述 Silicon Controlled Rectifier, 200000mA I(T), 1200V V(RRM) Silicon Controlled Rectifier, 200000mA I(T), 1200V V(RRM) Silicon Controlled Rectifier, 200000mA I(T), 1600V V(RRM) Silicon Controlled Rectifier, 200000mA I(T), 1200V V(RRM) Silicon Controlled Rectifier, 200000mA I(T), 1600V V(RRM)
Reach Compliance Code unknown unknown unknown unknown unknown
最大直流栅极触发电流 100 mA 100 mA 100 mA 100 mA 100 mA
最大直流栅极触发电压 3 V 3 V 3 V 3 V 3 V
快速连接描述 G-GR-AK G-GR-AK G-GR-AK - -
螺丝端子的描述 A-K-AK A-K-AK A-K-AK - -
最大维持电流 50 mA 50 mA 50 mA 50 mA 50 mA
最大漏电流 50 mA 50 mA 50 mA 50 mA 50 mA
通态非重复峰值电流 5000 A 5000 A 5000 A 5500 A 5500 A
最大通态电流 200000 A 200000 A 200000 A 200000 A 200000 A
最高工作温度 125 °C 125 °C 125 °C 125 °C 125 °C
最低工作温度 -40 °C -40 °C -40 °C -40 °C -40 °C
重复峰值反向电压 1200 V 1200 V 1600 V 1200 V 1600 V
Base Number Matches 1 1 1 1 1

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