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SKIIP1203GB122-2DUW

产品描述Half Bridge Based Peripheral Driver
产品类别模拟混合信号IC    驱动程序和接口   
文件大小61KB,共1页
制造商SEMIKRON
官网地址http://www.semikron.com
下载文档 详细参数 选型对比 全文预览

SKIIP1203GB122-2DUW概述

Half Bridge Based Peripheral Driver

SKIIP1203GB122-2DUW规格参数

参数名称属性值
包装说明,
Reach Compliance Codeunknown
ECCN代码EAR99
内置保护TRANSIENT
接口集成电路类型HALF BRIDGE BASED PERIPHERAL DRIVER
JESD-30 代码R-XXMA-X
功能数量2
输出电流流向SOURCE AND SINK
封装主体材料UNSPECIFIED
封装形状RECTANGULAR
封装形式MICROELECTRONIC ASSEMBLY
认证状态Not Qualified
表面贴装NO
端子形式UNSPECIFIED
端子位置UNSPECIFIED
Base Number Matches1

文档预览

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SKiiP 1203GB122-2DW
I. Power section 2 * SKiiP603GB122CT per phase
Absolute maximum ratings
Symbol
Conditions
Values
1200
900
±
20
1200 (900)
1200 (900)
8640
373
-40...+150 (125)
3000
2 * 500
Units
V
V
V
A
A
A
2
kA s
°C
V
A
IGBT
V
CES
1)
V
CC
Operating DC link voltage
V
GES
I
C
T
heat sink
= 25 (70) °C
Inverse diode
I
F
T
heat sink
= 25 (70) °C
I
FSM
T
j
= 150 °C, t
p
= 10ms; sin
2
I t (Diode) Diode, T
j
= 150 °C, 10ms
T
j
, (T
stg
)
V
isol
AC, 1min.
3)
I
C-package
T
heat sink
= 70°C, T
term
=115°C
SKiiP
®
3
SK integrated intelligent
Power PACK
2-pack
SKiiP 1203GB122-2DW
2)
Target data
housing S23
Characteristics
Symbol
IGBT
5)
V
CEsat
V
CEO
r
CE
Conditions
min.
typ.
max.
Units
V
V
mΩ
mJ
mJ
mA
nH
mΩ
V
V
mΩ
mJ
mJ
°C/W
°C/W
°C/W
A
A
6
10
Nm
Nm
2)
I
C
= 600A, T
j
= 25 (125)°C
V
GE
= 15V; T
j
= 25 (125) °C
V
GE
= 15V; T
j
= 25 (125) °C
I
C
=600A
Vcc=600V
4)
E
on
+ E
off
T
j
=125°C
Vcc=900V
I
CES
V
GE
=0,V
CE
=V
CES
,T
j
=25(125) °C
L
CE
top, bottom
R
CC´-EE´
terminal-chip, T
j
=25 °C
Inverse diode
5)
V
F
= V
EC
I
F
= 600A; T
j
= 25(125) °C
V
TO
T
j
= 25 (125) °C
r
T
T
j
= 25 (125) °C
I
C
=600A
Vcc=600V
4)
E
RR
T
j
=125°C
Vcc=900V
Thermal characteristics
R
thjs
per IGBT
R
thjs
per diode
2)
R
thsa
W: NWK 40; 8l/min; 50%glyc.
Current sensor
I
p RMS
T
a
=100° C , V
supply
=
±
15V
I
pmax RMS
t
2 s, T
a
=100° C
Mechanical data
M1
DC terminals, SI Units
M2
AC terminals, SI Units
2,0 (2,2)
2,3
1,2 (1,1) 1,3 (1,2)
1,6 (2,2) 2,0 (2,6)
180
320
2,4 (72)
5
0,20
1,9 (1,5)
2,2
1,2 (0,9) 1,4 (1,0)
1,3 (1,4) 1,5 (1,5)
48
73
2 * 400
2 * 500
0,028
0,055
0,013
Features
SKiiP technology inside
-
pressure contact of ceramic
to heat sink; low thermal
impedance
-
pressure contact of main
electric terminals
-
pressure contact of auxiliary
electric terminals
-
increased thermal cycling
capability
-
low stray inductance
-
homogenous current
distribution
low loss IGBTs
CAL diode technology
integrated current sensor
integrated temperature sensor
high power density
1)
4
8
3)
4)
5)
8)
assembly of suitable MKP
capacitor per terminal is
mandatory (SEMIKRON type
41046230 is recommended)
D integrated gate driver
U with DC-bus voltage
measurement (option for GB)
L mounted on standard heat
sink for forced air cooling
W mounted on standard liquid
cooled heat sink
T
term
= temperature of terminal
with SKiiP 3 gate driver
measured at chip level
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee,
expressed or implied is made regarding delivery, performance or suitability.
©by
SEMIKRON
20.03.01 08:53
B 7
23

SKIIP1203GB122-2DUW相似产品对比

SKIIP1203GB122-2DUW SKIIP1203GB122-2DL SKIIP1203GB122-2DUL
描述 Half Bridge Based Peripheral Driver Half Bridge Based Peripheral Driver Half Bridge Based Peripheral Driver
Reach Compliance Code unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99
内置保护 TRANSIENT TRANSIENT TRANSIENT
接口集成电路类型 HALF BRIDGE BASED PERIPHERAL DRIVER HALF BRIDGE BASED PERIPHERAL DRIVER HALF BRIDGE BASED PERIPHERAL DRIVER
JESD-30 代码 R-XXMA-X R-XXMA-X R-XXMA-X
功能数量 2 2 2
输出电流流向 SOURCE AND SINK SOURCE AND SINK SOURCE AND SINK
封装主体材料 UNSPECIFIED UNSPECIFIED UNSPECIFIED
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
认证状态 Not Qualified Not Qualified Not Qualified
表面贴装 NO NO NO
端子形式 UNSPECIFIED UNSPECIFIED UNSPECIFIED
端子位置 UNSPECIFIED UNSPECIFIED UNSPECIFIED
Base Number Matches 1 1 1
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