Small Signal Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-116,
| 参数名称 | 属性值 |
| 是否无铅 | 含铅 |
| 是否Rohs认证 | 不符合 |
| 包装说明 | IN-LINE, R-CDIP-T14 |
| Reach Compliance Code | compliant |
| ECCN代码 | EAR99 |
| 最大集电极电流 (IC) | 0.5 A |
| 集电极-发射极最大电压 | 40 V |
| 配置 | SINGLE |
| 最小直流电流增益 (hFE) | 40 |
| JEDEC-95代码 | TO-116 |
| JESD-30 代码 | R-CDIP-T14 |
| JESD-609代码 | e0 |
| 元件数量 | 1 |
| 端子数量 | 14 |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 峰值回流温度(摄氏度) | NOT SPECIFIED |
| 极性/信道类型 | NPN |
| 认证状态 | Not Qualified |
| 表面贴装 | NO |
| 端子面层 | TIN LEAD |
| 端子形式 | THROUGH-HOLE |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 晶体管元件材料 | SILICON |
| 标称过渡频率 (fT) | 200 MHz |
| Base Number Matches | 1 |
| NSQ2221 | NSQ3798 | NSQ3799 | NSQ2484 | NSQ2906 | NSQ3724 | |
|---|---|---|---|---|---|---|
| 描述 | Small Signal Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-116, | Small Signal Bipolar Transistor, 0.05A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-116, | Small Signal Bipolar Transistor, 0.05A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-116, | Small Signal Bipolar Transistor, 0.05A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-116, | Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-116, | Power Bipolar Transistor, 1.5A I(C), 30V V(BR)CEO, 4-Element, NPN, Silicon, TO-116, Ceramic, Metal-Sealed Cofired, 14 Pin, TO-116, 14 PIN |
| 包装说明 | IN-LINE, R-CDIP-T14 | IN-LINE, R-CDIP-T14 | IN-LINE, R-CDIP-T14 | IN-LINE, R-CDIP-T14 | IN-LINE, R-CDIP-T14 | TO-116, 14 PIN |
| Reach Compliance Code | compliant | compliant | compliant | compliant | compliant | compliant |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 最大集电极电流 (IC) | 0.5 A | 0.05 A | 0.05 A | 0.05 A | 0.6 A | 1.5 A |
| 集电极-发射极最大电压 | 40 V | 40 V | 40 V | 40 V | 40 V | 30 V |
| 配置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SEPARATE, 4 ELEMENTS |
| 最小直流电流增益 (hFE) | 40 | 150 | 250 | 300 | 40 | 25 |
| JEDEC-95代码 | TO-116 | TO-116 | TO-116 | TO-116 | TO-116 | TO-116 |
| JESD-30 代码 | R-CDIP-T14 | R-CDIP-T14 | R-CDIP-T14 | R-CDIP-T14 | R-CDIP-T14 | R-CDIP-T14 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 |
| 元件数量 | 1 | 1 | 1 | 1 | 1 | 4 |
| 端子数量 | 14 | 14 | 14 | 14 | 14 | 14 |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE |
| 极性/信道类型 | NPN | PNP | PNP | NPN | PNP | NPN |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | NO | NO | NO | NO | NO | NO |
| 端子面层 | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| 标称过渡频率 (fT) | 200 MHz | 100 MHz | 100 MHz | 50 MHz | 200 MHz | 200 MHz |
| 是否无铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | - |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | - |
电子工程世界版权所有
京B2-20211791
京ICP备10001474号-1
电信业务审批[2006]字第258号函
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved