UNISONIC TECHNOLOGIES CO., LTD
MJE13003D-P
Preliminary
NPN SILICON TRANSISTOR
HIGH VOLTAGE
FAST-SWITCHING NPN
POWER TRANSISTOR
DESCRIPTION
The UTC
MJE13003D-P
is a NPN Power Transistor. It is
intended to be used in applications requiring medium voltage
capability and high switching speeds.
FEATURES
* Fast-Switching And High Voltage Capability
* Dynamic Parameters With Low Spread
* High Reliability
* Integrated Antiparallel Collector-Emitter Diode
INTERNAL SCHEMATIC DIAGRAM
C (2)
B (1)
E (3)
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
MJE13003DL-P-T92-B
MJE13003DG-P-T92-B
MJE13003DL-P-T92-K
MJE13003DG-P-T92-K
MJE13003DL-P-T92-R
MJE13003DG-P-T92-R
Package
TO-92
TO-92
TO-92
Pin Assignment
1
2
3
E
C
B
E
C
B
E
C
B
Packing
Tape Box
Bulk
Tape Reel
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., Ltd
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MJE13003D-P
Preliminary
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector- Emitter Voltage (V
BE
=0)
V
CES
700
V
Collector-Emitter Voltage (I
B
=0)
V
CEO
400
V
Emitter-Base Voltage (I
C
=0, I
B
=0.75A, t
P
<10μS)
V
EBO
9
V
Collector Current
I
C
1.5
A
Collector Peak Current (t
P
<5ms)
I
CM
3
A
Base Current
I
B
0.75
A
Base Peak Current (t
P
<5ms)
I
BM
1.5
A
Power Dissipation (T
C
=25°C)
P
D
30
W
Junction Temperature
T
J
150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
PARAMETER
Emitter-Base Breakdown Voltage
Collector-Emitter Sustaining Voltage (Note)
Collector Cut-Off Current
Collector-Emitter Saturation Voltage (Note)
Base-Emitter Saturation Voltage (Note)
DC Current Gain
Resistive Load
Rise Time
Storage Time
Fall Time
SYMBOL
BV
EBO
V
CEO(SUS)
I
CES
V
CE(SAT)
V
BE(SAT)
h
FE
t
R
t
S
t
F
t
S
TEST CONDITIONS
I
E
=10mA, I
C
=0
I
C
=10mA, I
B
=0
V
CE
=700V,V
BE
=0
I
C
=0.5 A, I
B
=0.1 A
I
C
=1 A, I
B
=0.25 A
I
C
=1.5 A, I
B
=0.5 A
I
C
=0.5 A, I
B
=0.1 A
I
C
=1 A, I
B
=0.25 A
I
C
=0.5A, V
CE
=5 V
I
C
=1 A, V
CE
=5 V
V
CC
=125 V, I
C
=1 A,
I
B1
=0.2 A, I
B2
=-0.2 A
t
P
=25μs
I
C
=1 A, I
B1
=0.2 A,V
BE
=-5 V,
L=50mH, V
CLAMP
=300V
I
F
=0.5 A
MIN
9
450
TYP MAX UNIT
18
V
V
1
mA
0.5
V
1
V
3
V
1
V
1.2
V
51
30
1
μs
4
μs
0.7
μs
0.8
1.5
μs
V
8
5
Inductive Load Storage Time
V
F
Diode Forward Voltage
Note: Pulse Test: Pulse duration≤300μs, Duty cycle≤2 %
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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MJE13003D-P
TEST CIRCURTS
Inductive Load Switching Test Circuit
Preliminary
NPN SILICON TRANSISTOR
(3)
I
C
(1)
I
B
R
BB
(2)
V
BB
-
+
V
CE
V
Clamp
V
CC
Notes: 1. Fast Electronic Switch
2. Non-Inductive Resistor
3. Fast Recovery Rectifier
Resistive Load Switching Test Circuit
I
C
(1)
I
B
V
CE
R
C(2)
R
BB
(2)
V
BB
-
+
V
CC
Notes: 1. Fast Electronic Switch
2. Non-Inductive Resistor
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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MJE13003D-P
Preliminary
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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