Datasheet> 器件分类 > 分立半导体> 晶体管> SFF6661/39S

SFF6661/39S: 产品描述Small Signal Field-Effect Transistor, 0.86A I(D), 90V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, HERMETIC SEALED PACKAGE-3; 产品类别分立半导体晶体管; 文件大小118KB，共2页; 制造商SSDI; 官网地址http://www.ssdi-power.com/

下载文档详细参数选型对比全文预览

SFF6661/39S概述

Small Signal Field-Effect Transistor, 0.86A I(D), 90V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, HERMETIC SEALED PACKAGE-3

SFF6661/39S规格参数

参数名称	属性值
零件包装代码	TO-39
包装说明	CYLINDRICAL, O-MBCY-W3
针数	3
Reach Compliance Code	compliant
ECCN代码	EAR99
配置	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	90 V
最大漏极电流 (ID)	0.86 A
最大漏源导通电阻	4 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)	10 pF
JEDEC-95代码	TO-39
JESD-30 代码	O-MBCY-W3
元件数量	1
端子数量	3
工作模式	ENHANCEMENT MODE
封装主体材料	METAL
封装形状	ROUND
封装形式	CYLINDRICAL
极性/信道类型	N-CHANNEL
认证状态	Not Qualified
表面贴装	NO
端子形式	WIRE
端子位置	BOTTOM
晶体管应用	SWITCHING
晶体管元件材料	SILICON
Base Number Matches	1

文档预览

下载PDF文档

全文
预览

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, CA 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

SFF6661/39

0.86 AMP

N-CHANNEL MOSFET

90 Volts, 4Ω

Features:



Rugged construction

Low RDS(on) and high transconductance

Fast recovery and superior dv/dt performance

Increased reverse energy capability

Low input and transfer capacitance for easy

paralleling

Hermetically sealed package

Very fast switching speed

TX, TXV, S-Level screening available

Replacement for 2N6661

DESIGNER’S DATA SHEET

Part Number / Ordering Information

SFF6661

/39 ___

│

└

Screening

__ = Not Screened

TX = TX Level

TXV = TXV Level

S = S Level

Package

/39 = TO-39



Maximum Ratings

Drain - Source Voltage

Gate - Source Voltage

Max. Continuous Drain Current

= 150°C)

Max. Instantaneous Drain Current (Tj limited)

Total Power Dissipation

Operating & Storage Temperature

Maximum Thermal Resistance

(Junction to Ambient)

(Junction to Case)

NOTES:

*Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.

1/ For ordering information, price, and availability - contact factory.

2/ Screening based on MIL-PRF-19500. Screening flows available on request.

3/ Unless otherwise specified, all electrical characteristics @25°C.

Symbol

= 25°C

= 100°C

= 25°C

& T

STG

θJA

θJC

Value

±20

0.86

0.54

6.25

0.725

-65 to +150

170

TO-39

Units

°C

°C /W

NOTE:

All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: FT0041B

DOC

SFF6661/39S相似产品对比

	SFF6661/39S	SFF6661/39TXV	SFF6661/39	SFF6661/39TX
描述	Small Signal Field-Effect Transistor, 0.86A I(D), 90V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, HERMETIC SEALED PACKAGE-3	Small Signal Field-Effect Transistor, 0.86A I(D), 90V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, HERMETIC SEALED PACKAGE-3	Small Signal Field-Effect Transistor, 0.86A I(D), 90V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, HERMETIC SEALED PACKAGE-3	Small Signal Field-Effect Transistor, 0.86A I(D), 90V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, HERMETIC SEALED PACKAGE-3
零件包装代码	TO-39	TO-39	TO-39	TO-39
包装说明	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3
针数	3	3	3	3
Reach Compliance Code	compliant	compliant	compliant	compliant
ECCN代码	EAR99	EAR99	EAR99	EAR99
配置	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	90 V	90 V	90 V	90 V
最大漏极电流 (ID)	0.86 A	0.86 A	0.86 A	0.86 A
最大漏源导通电阻	4 Ω	4 Ω	4 Ω	4 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)	10 pF	10 pF	10 pF	10 pF
JEDEC-95代码	TO-39	TO-39	TO-39	TO-39
JESD-30 代码	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3
元件数量	1	1	1	1
端子数量	3	3	3	3
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
封装主体材料	METAL	METAL	METAL	METAL
封装形状	ROUND	ROUND	ROUND	ROUND
封装形式	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	NO	NO	NO	NO
端子形式	WIRE	WIRE	WIRE	WIRE
端子位置	BOTTOM	BOTTOM	BOTTOM	BOTTOM
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON	SILICON
Base Number Matches	1	1	1	1

SFF6661/39S

SFF6661/39S概述

SFF6661/39S规格参数

文档预览

SFF6661/39S相似产品对比

推荐资源