Power Transistor Arrays
PUB4219
(PU4219)
, PUB4519
(PU4519)
Silicon PNP epitaxial planar type darlington
For power amplification
Complementary to PUB4119 (PU4119),
PUB4419 (PU4419)
■
Features
•
High forward current transfer ratio h
FE
•
High-speed switching
•
PUB4219 (PU4219): PNP 4 elements
PUB4519 (PU4519): PNP 2 elements
×
2
9.5
±0.2
8.0
±0.2
Unit: mm
25.3
±0.2
4.0
±0.2
0.8
±0.25
0.5
±0.15
1.0
±0.25
2.54
±0.2
9
×
2.54 = 22.86
±0.25
■
Absolute Maximum Ratings
T
C
=
25°C
Parameter
Symbol
Collector-base voltage (Emitter open)
V
CBO
Collector-emitter voltage (Base open)
V
CEO
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
T
a
=
25°C
Junction temperature
Storage temperature
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
−60
−60
−5
−2
−4
15
3.5
150
−55
to
+150
Unit
V
V
V
A
A
W
°C
°C
1.65
±0.2
Solder Dip
5.3
±0.5
4.4
±0.5
0.5
±0.15
C 1.5
±0.5
1: Emitter
2: Base
3: Collector
4: Base
5: Collector
1 2 3 4 5 6 7 8 9 10
6: Base
7: Collector
8: Base
9: Collector
10: Emitter
SIP10-A1 Package
■
Electrical Characteristics
T
C
=
25°C
±
3°C
Parameter
Collector-emitter voltage (Base open)
Base-emitter voltage
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
2. *: Rank classification
Rank
h
FE
Free
P
Q
1 000 to 10 000 2 000 to 10 000 1 000 to 5 000
Symbol
V
CEO
V
BE
I
CBO
I
CEO
I
EBO
h
FE1
h
FE2 *
V
CE(sat)
f
T
t
on
t
stg
t
f
Conditions
I
C
= −30
mA, I
B
=
0
V
CE
= −4
V, I
C
= −2
A
V
CB
= −60
V, I
E
=
0
V
CE
= −30
V, I
B
=
0
V
EB
= −5
V, I
C
=
0
V
CE
= −4
V, I
C
= −1
A
V
CE
= −4
V, I
C
= −2
A
I
C
= −2
A, I
B
= −8
mA
V
CE
= −10
V, I
C
= −
0.5 A, f
=
1 MHz
I
C
= −2
A
I
B1
= −8
mA, I
B2
=
8 mA
V
CC
= −50
V
1 000
1 000
20
0.4
1.5
0.5
Min
−60
Typ
Max
−2.8
−1
−2
−2
10 000
−2.5
V
MHz
µs
µs
µs
Unit
V
V
mA
mA
mA
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
■
Internal Connection
•
PUB4219
3
2
1
4
5
6
7
8
9
2
10
1
•
PUB4519
3
4
5
6
7
8
9
10
Note) The part numbers in the parenthesis show conventional part number.
Publication date: March 2004
SJK00071AED
1
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
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applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
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(4) The products described in this material are intended to be used for standard applications or general elec-
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hold appliances).
Consult our sales staff in advance for information on the following applications:
•
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-
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•
Any applications other than the standard applications intended.
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(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-
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