Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SFT501J and SFT503J
SFT501JC and SFT503JC
Series
5 AMP
200 Volts
HIGH SPEED
PNP Transistor
Features:
Fast Switching
High Frequency, 80 MHz Typical
BVCEO 150 Volts Min
High Linear Gain
Low Saturation Voltage and Leakage
200ºC Operating Temperature
Gold Eutectic Die Attach
Designed for Complementary Use with SFT502/G
and SFT504/G
TX, TXV, and S Level Screening Available
DESIGNER’S DATA SHEET
Part Number / Ordering Information
1/
SFT501 __ __ __
SFT503 __ __ __
│ │ └
Scre
ening
2/
__
= Not Screened
│ │
TX = TX Level
│ │
TXV = TXV Level
│ │
S = S Level
│ │
│ │
│ │
│ └
Polarity:
__
= Normal
R = Reverse
│
3/
└
Package
J = TO-257, glass seals
JC = TO-257, ceramic seals
Maximum Ratings
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Continues Collector Current
Base Current
Power Dissipation
@ TC = 100ºC
Derate above 100ºC
Operating & Storage Temperature
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
B
P
D
Top & Tstg
Junction to Case
R
θJC
Value
150
200
7
5
1
20
200
-65 to +200
5 (typ 3)
TO-257
Units
Volts
Volts
Volts
Amps
Amps
W
mW/ºC
ºC
ºC/W
Maximum Thermal Resistance
NOTES:
*Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%
1/ For Ordering Information, Price, and Availability Contact Factory.
2/ Screening per MIL-PRF-19500
3/ For Package Outlines Contact Factory.
4/ Unless Otherwise Specified, All Electrical Characteristics @25ºC.
Available Part Numbers:
SFT501J
SFT501JC
SFT503J
SFT503JC
Code
-
R
PIN ASSIGNMENT
Function
Normal
Reverse
Pin 1
Collector
Collector
Pin 2
Emitter
Base
Pin 3
Base
Emitter
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
B17BH
DATA SHEET #: TR0100B
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SFT501J and SFT503J
SFT501JC and SFT503JC
Series
Symbol
I
C
= 50mA
I
C
= 200µA
I
E
= 200µA
V
CE
= 100 V
V
CB
= 100 V
V
EB
= 6 V
V
CE
= 5V, I
C
= 50mA
V
CE
= 5V, I
C
= 2.5A
V
CE
= 5V, I
C
= 5A
V
CE
= 5V, I
C
= 50mA
V
CE
= 5V, I
C
= 2.5A
V
CE
= 5V, I
C
= 5A
I
C
= 2.5A, I
B
= 250mA
I
C
= 5.0A, I
B
= 500mA
I
C
= 2.5A, I
B
= 250mA
I
C
= 5.0A, I
B
= 500mA
V
CE
= 5V, I
C
= 0.5A, f = 10MHz
V
CB
= 10V, I
E
= 0A, f = 1MHz
V
BE
= 10V, I
C
= 0A, f = 1MHz
V
CC
= 50V,
I
C
= 5A,
I
B1
= I
B2
= 0.5A
BV
CEO
BV
CBO
BV
EBO
I
CEO
I
CBO
I
EBO
Min
150
200
7
––
––
––
20
30
20
50
50
40
––
––
––
––
40
––
––
––
––
––
––
Typ
200
275
13
––
––
––
––
––
70
––
––
70
0.35
0.6
1.0
1.2
60
130
450
25
40
320
130
Max
––
––
––
1.0
500
500
––
––
––
––
––
––
0.75
1.5
1.3
1.5
––
225
600
50
250
600
300
Units
Volts
Volts
Volts
µA
nA
nA
Electrical Characteristic
4/
Collector – Emitter Breakdown Voltage
Collector – Base Breakdown Voltage
Emitter – Base Breakdown Voltage
Collector – Cutoff Current
Collector – Cutoff Current
Emitter – Cutoff Current
DC Current Gain *
SFT501
SFT503
h
FE
––
Collector – Emitter Saturation Voltage *
Base – Emitter Saturation Voltage *
Current Gain Bandwidth Product
Output Capacitance
Input Capacitance
Delay Time
Rise Time
Storage Time
Fall Time
V
CE(Sat)
V
BE(Sat)
f
T
c
ob
C
ib
t
d
t
r
t
S
t
f
Volts
Volts
MHz
pF
pF
nsec
nsec
nsec
nsec
Case Outline: TO-257
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
B17BH
DATA SHEET #: TR0100B
DOC
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