产品描述TRANSISTOR 6 A, 20 V, 0.046 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, SC-75, POWERPAK-6, FET General Purpose Power
• Find out more about Vishay’s Medical Products at:
www.vishay.com/medical-mosfets
1
D
2
D
3
6
D
5
D
S
4
S
1.60 mm
S
N-Channel MOSFET
G
G
APPLICATION EXAMPLES
• Medical Implantable Applications Including
- Drug Delivery Systems
- Defibrillators
- Pacemakers
- Hearing Aids
- Other Implantable Devices
• Load Switch for Portable Applications
Lot Traceability
and Date code
1.60 mm
Marking Code
MCX
Part # code
XXX
• High Frequency dc-to-dc Converter
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
PowerPAK SC-75
SMMB406EDK-T1-GE3
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
a
Continuous Drain Current (T
J
= 150 °C)
T
C
= 70 °C
a
T
A
= 25
°C
b, c
T
A
= 70 °C
b, c
Pulsed Drain Current
Continuous Source-Drain Diode Current
T
C
= 25
°C
a
T
A
= 25 °C
b, c
T
C
= 25 °C
Maximum Power Dissipation
T
C
= 70 °C
T
A
= 25 °C
b, c
T
A
= 70 °C
b, c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
d, e
T
J
, T
stg
P
D
I
DM
I
S
I
D
SYMBOL
V
DS
V
GS
LIMIT
- 20
± 12
6
6
5.1
4.1
15
6
1.6
10
6.4
1.95
1.25
- 55 to + 150
260
°C
W
A
UNIT
V
Document Number: 65461
S09-2018-Rev. A, 05-Oct-09
www.vishay.com
1
SMMB406EDK
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum
Junction-to-Ambient
b, f
t
≤
5s
SYMBOL
R
thJA
TYPICAL
51
MAXIMUM
64
UNIT
°C/W
10
12.5
Maximum Junction-to-Case
Steady State
R
thJC
Notes
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 100 °C/W.
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
I
S
I
SM
V
SD
I
S
= 4.1 A, V
GS
= 0 V
T
C
= 25 °C
-
-
-
-
-
0.8
6
15
1.2
A
V
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 10 V, R
L
= 2.4
Ω
I
D
≅
4.1 A, V
GEN
= 10 V, R
g
= 1
Ω
V
DD
= 10 V, R
L
= 2.4
Ω
I
D
≅
4.1 A, V
GEN
= 4.5 V, R
g
= 1
Ω
f = 1 MHz
V
GS
= 10 V
V
GS
= 4.5 V
V
DS
= 10 V, I
D
= 5.1 A
V
DS
= 10 V, I
D
= 5.1 A
V
GS
= 0 V
V
DS
= 10 V, f = 1 MHz
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
350
63
37
7.5
3.5
0.95
0.75
3.5
10
12
18
12
5
12
15
10
-
-
-
12
5.5
-
-
-
15
20
30
20
10
20
25
15
ns
Ω
nC
pF
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 12 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 4.5 V
V
GS
= 4.5 V
V
GS
= 2.5 V
V
DS
= 20 V
V
DS
= 20 V, T
J
= 55 °C
V
DS
≥
5 V
I
D
= 3.9 A
I
D
= 3.3 A
20
-
-
0.6
-
-
-
10
-
-
-
-
23
- 3.3
-
-
-
-
-
0.037
0.051
14
-
-
-
1.4
±8
-1
- 10
-
0.046
0.063
-
A
Ω
S
µA
V
mV/°C
V
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
= 10 V, I
D
= 3.9 A
www.vishay.com
2
Document Number: 65461
S09-2018-Rev. A, 05-Oct-09
SMMB406EDK
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
PARAMETER
Source-Drain Body Diode Characteristics
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
t
rr
Q
rr
t
a
t
b
I
F
= 4.1 A, dI/dt = 100 A/µs, T
J
= 25 °C
-
-
-
-
15
8
8
7
30
20
-
-
ns
nC
ns
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Notes
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
T
A
= 25 °C, unless otherwise noted
4
10
-2
10
-3
I
GSS
- Gate Current (mA)
I
GSS
- Gate Current (A)
3
10
-4
10
-5
T
J
= 150 °C
10
-6
10
-7
10
-8
10
-9
T
J
= 25 °C
2
I
GSS
at 25 °C
1
0
0
3
6
9
12
15
18
10
-10
0
3
6
9
12
15
18
V
GS
- Gate-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Gate Current vs. Gate-Source Voltage
15
V
GS
= 5
V
thru 3
V
V
GS
= 2.5
V
12
I
D
- Drain Current (A)
I
D
- Drain Current (A)
4
5
Gate Current vs. Gate-Source Voltage
T
C
= - 55 °C
3
9
6
V
GS
= 2
V
3
V
GS
= 1.5
V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
2
T
C
= 25 °C
1
T
C
= 125 °C
0
0.0
0.5
1.0
1.5
2.0
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
Transfer Characteristics
Document Number: 65461
S09-2018-Rev. A, 05-Oct-09
www.vishay.com
3
SMMB406EDK
Vishay Siliconix
TYPICAL CHARACTERISTICS
T
A
= 25 °C, unless otherwise noted
0.12
500
R
DS(on)
- On-Resistance (Ω)
0.09
C - Capacitance (pF)
400
C
iss
V
GS
= 2.5
V
0.06
V
GS
= 4.5
V
0.03
300
200
C
oss
100
C
rss
0
0.00
0
3
6
9
12
15
0
2
4
6
8
10
12
14
16
18
20
I
D
- Drain Current (A)
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current and Gate Voltage
10
I
D
= 5.1 A
V
GS
- Gate-to-Source
Voltage
(V)
8
V
DS
= 10
V
6
V
DS
= 16
V
4
R
DS(on)
- On-Resistance
1.5
1.7
I
D
= 3.9 A
Capacitance
1.3
(Normalized)
V
GS
= 4.5
V,
2.5
V
1.1
0.9
2
0.7
0
0
2
4
6
8
0.5
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
100
0.20
On-Resistance vs. Junction Temperature
I
D
= 2 A
R
DS(on)
- On-Resistance (Ω)
0.16
I
S
- Source Current (A)
10
0.12
T
J
= 150 °C
1
T
J
= 25 °C
0.08
T
J
= 125 °C
0.04
T
J
= 25 °C
0.1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
1
2
3
4
5
V
SD
- Source-to-Drain
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
www.vishay.com
4
On-Resistance vs. Gate-to-Source Voltage
Document Number: 65461
S09-2018-Rev. A, 05-Oct-09
SMMB406EDK
Vishay Siliconix
TYPICAL CHARACTERISTICS
T
A
= 25 °C, unless otherwise noted
1.3
1.2
1.1
V
GS(th)
(V)
1.0
0.9
0.8
0.7
0.6
- 50
5
I
D
= 250
µA
20
Power (W)
30
25
15
10
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
1
Pulse (s)
10
100
1000
T
J
- Temperature (°C)
Threshold Voltage
100
Limited
by
R
DS(on)
*
10
100
µs
1 ms
10 ms
100 ms
0.1
T
A
= 25 °C
Single Pulse
BVDSS Limited
0.01
0.1
0
1
10
100
0
1 s, 10 s
DC
I
D
- Drain Current (A)
I
D
- Drain Current (A)
9
15
Single Pulse Power, Junction-to-Ambient
12
1
Package Limited
6
3
25
50
75
100
125
150
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
R
DS(on)
is specified
T
C
- Case Temperature (°C)
Safe Operating Area, Junction-to-Ambient
12
Current Derating*
Power Dissipation (W)
9
6
3
0
25
50
75
100
125
T
C
- Case Temperature (°C)
150
Power Derating
* The power dissipation P is based on T
J(max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
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