UF2810P
RF Power MOSFET Transistor
10W, 100-500 MHz, 28V
Features
M/A-COM Products
Released;
RoHS Compliant
Package Outline
•
•
•
•
•
•
N-Channel enhancement mode device
DMOS structure
Lower capacitances for broadband operation
Common source configuration
Lower noise floor
100 MHz to 500 MHz operation
ABSOLUTE MAXIMUM RATINGS AT 25° C
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain-Source Current
Power Dissipation
Junction Temperature
Storage Temperature
Thermal Resistance
Symbol
V
DS
V
GS
I
DS
P
D
T
J
T
STG
θ
JC
Rating
65
20
1.4*
26.9
200
-55 to +150
6.5
Units
V
V
A
W
°C
°C
°C/W
TYPICAL DEVICE IMPEDANCES
F (MHz)
100
300
500
Z
IN
(Ω)
30.0-j150.0
15.0-j90.0
4.2-j46.0
Z
LOAD
(Ω)
70.0+j110.0
55.0+j80.0
48.0+j50.0
V
DD
=28V, I
DQ
=100 Ma, P
OUT
=10.0 W
Z
IN
is the series equivalent input impedance of the device
from gate to gate.
Z
LOAD
is the optimum series equivalent load impedance
as measured from drain to drain.
ELECTRICAL CHARACTERISTICS AT 25°C
Parameter
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Capacitance
Power Gain
Drain Efficiency
Load Mismatch Tolerance
*Per side
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(TH)
G
M
C
ISS
C
OSS
C
RSS
G
P
ŋ
D
VSWR-T
Min
65
-
-
2.0
80
-
-
-
10
50
-
Max
-
1.0
1.0
6.0
-
7
5
2.4
-
-
20:1
Units
V
mA
µA
V
S
pF
pF
pF
dB
%
-
Test Conditions
V
GS
= 0.0 V , I
DS
= 2.0 mA
V
GS
= 28.0 V , V
GS
= 0.0 V
V
GS
= 20.0 V , V
DS
= 0.0 V
V
DS
= 10.0 V , I
DS
= 10.0 mA
V
DS
= 10.0 V , I
DS
100.0 mA ,
Δ
V
GS
= 1.0V, 80
μs
Pulse
V
DS
= 28.0 V , F = 1.0 MHz
V
DS
= 28.0 V , F = 1.0 MHz
V
DS
= 28.0 V , F = 1.0 MHz
V
DD
= 28.0 V, I
DQ
= 100.0 mA, P
OUT
= 50.0 W F =500 MHz
V
DD
= 28.0 V, I
DQ
= 100.0 mA, P
OUT
= 50.0 W F =500 MHz
V
DD
= 28.0 V, I
DQ
= 100.0 mA, P
OUT
= 50.0 W F =500 MHz
1
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
is considering for development. Performance is based on target specifications, simulated results,
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
and/or prototype measurements. Commitment to develop is not guaranteed.
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Visit www.macomtech.com for additional data sheets and product information.
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
UF2810P
RF Power MOSFET Transistor
10W, 100-500 MHz, 28V
TEST FIXTURE SCHEMATIC
M/A-COM Products
Released;
RoHS Compliant
TEST FIXTURE ASSEMBLY
2
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
is considering for development. Performance is based on target specifications, simulated results,
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
and/or prototype measurements. Commitment to develop is not guaranteed.
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Visit www.macomtech.com for additional data sheets and product information.
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
