UNISONIC TECHNOLOGIES CO., LTD
UF8010
Preliminary
Power MOSFET
80 Amps, 100 Volts
N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC
UF8010
uses advanced technology to provide
excellent R
DS(ON)
, fast switching speed, low gate charge, and
excellent efficiency. This device is suitable for high frequency DC-DC
converters, UPS and motor control.
FEATURES
* R
DS(ON)
:12mΩ (Typ.)
* Lower gate-drain charge for lower switching losses
* Perfect avalanche voltage and current performance
* Fully characterized capacitance including effective C
OSS
to simplify
design
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UF8010L-TA3-T
UF8010G-TA3-T
Package
TO-220
Pin Assignment
1
2
3
G
D
S
Packing
Tube
www.unisonic.com.tw
Copyright © 2009 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-348.a
UF8010
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Gate to Source Voltage
V
GS
±20
V
Continuous Drain Current (V
GS
=10V,T
C
=25°C)
I
D
80 (Note 2)
A
Pulsed Drain Current
I
DM
320
A
Single Pulse (Note 2,3)
E
AS
310
mJ
Avalanche Energy
26
mJ
Repetitive
E
AR
Avalanche Current
I
AR
45
A
Peak Diode Recovery dv/dt (Note 4)
dv/dt
16
V/ns
260
W
Power Dissipation (T
C
=25°C)
P
D
Derating above 25°C
1.8
W/°C
Junction Temperature
T
J
+175
°C
Storage Temperature
T
STG
-55 ~ + 175
°C
Notes 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Calculated continuous current based on maximum allowable junction temperature. Package limitation
current is 75A.
3. Starting T
J
= 25°C, L = 0.31mH, R
G
=25Ω, I
AS
= 45A.
4. I
SD
≤45A,
di/dt≤110A/μs, V
DD
≤BV
DSS
, T
J
≤
175°C
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θ
JA
θ
JC
MIN
TYP
MAX
62
0.57
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise specified)
PARAMETER
STATIC CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Forward Current
Gate-Source Reverse Current
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SYMBOL
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
C
ISS
C
OSS
C
RSS
t
D(ON)
t
R
t
D(OFF)
t
F
Q
G
Q
GS
Q
GD
TEST CONDITIONS
V
GS
=0 V, I
D
=250μA
V
DS
=100V,V
GS
=0V
V
GS
= 20 V
V
GS
= -20 V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10 V, I
D
= 45A (Note 1)
MIN
100
20
200
-200
2.0
12
3830
480
59
15
130
61
120
81
22
26
4.0
15
TYP MAX UNIT
V
μA
nA
nA
V
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
DS
=25 V,V
GS
=0V, f =1.0MHz
V
DD
=50V,I
D
= 80A, R
G
= 39Ω
V
GS
= 10V (Note 1)
V
DS
=80V, V
GS
=10V
I
D
= 80A (Note 1)
120
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-348.a
UF8010
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
=80 A ,V
GS
=0 V,
1.3
V
Drain-Source Diode Forward Voltage
V
SD
T
J
= 25°C (Note 1)
Maximum Continuous Drain-Source
I
S
80
A
Diode Forward Current
Maximum Pulsed Drain-Source Diode
320
A
I
SM
Forward Current (Note 1,2)
I
F
=80 A, V
DD
=50V, T
J
= 150℃
Reverse Recovery Time
t
RR
99
150
ns
di/dt = 100 A/μs (Note 1)
Reverse Recovery Charge
Q
RR
460 700 nC
Notes: 1. Pulse width
≤
300μs; duty cycle
≤
2%
2. Calculated continuous current based on maximum allowable junction temperature. Package limitation
current is 75A.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R502-348.a
UF8010
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit
+
3
-
+
2
-
-
4
+
Circuit Layout Considerations
· Low Stray Inductance
· Ground Plane
· Low Leakage Inductance
Current Transformer
D.U.T.
1
R
G
· dv/dt controlled by RG
· Driver same type as D.U.T
· ISD controlled by Duty Factor
“D”
· D.U.T.
–
Device Under Test
+
- V
DD
* Reverse Polarity of D.U.T. for P-Channel
1
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
V
GS
=10V*
2 D.U.T. I
SD
Waveform
Reverse
Body Diode Forward
Recovery
Current di/dt
Current
3 D.U.T. V
DS
Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode Forward Drop
4 Inductor Current
Ripple≤5％
* V
GS
= 5.0V for Logic Level Devices
I
SD
V
DD
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 6
QW-R502-348.a
UF8010
Switching Time Test Circuit
R
D
V
DS
V
GS
R
G
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
Switching Time Waveforms
V
DS
90%
D.U.T.
V
DD
+
-
10%
V
GS
t
d(on)
t
R
t
d(off)
t
F
10V
Pulse Width≤1μs
Duty Factor≤0.1%
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 6
QW-R502-348.a
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