HMC544
/
544E
v00.0206
GaAs MMIC T/R SWITCH,
DC - 4 GHz
Typical Applications
The HMC544 / HMC544E is ideal for:
• Cellular/PCS/3G Infrastructure
• Basestations & Repeaters
• WLAN, WiMAX and WiBro
• Microwave and Fixed Wireless Radios
Features
Very Low Insertion Loss: 0.2 dB @ 1.0 GHz
High Input P1dB: +39 dBm
High Input IP3: +55 dBm
Positive Control: 0/+3V to 0/+5V
Compact SOT26 SMT Package
Functional Diagram
General Description
The HMC544 & HMC544E are low cost SPDT swit-
ches in 6-lead SOT26 packages for use in transmit-
receive applications which require very low insertion
loss at medium power levels. These devices can
control signals from DC to 4.0 GHz and are especially
suited for 450, 900, 1900, 2300, and 2700 MHz
applications with <0.5 dB insertion loss. This GaAs
PHEMT design provides exceptional linearity
performance of +36 dBm 1dB compression point and
+55 dBm third order intercept at +3 volt bias. RF1
and RF2 are reflective opens when “Off”. On-chip
circuitry allows positive control operation at very low
DC current.
10
SWITCHES - SMT
Electrical Specifi cations,
T
A
= +25° C, Vctl = 0/+3 Vdc, 50 Ohm System
Parameter
Frequency
DC - 1.0 GHz
DC - 2.5 GHz
DC - 3.0 GHz
DC - 4.0 GHz
DC - 1.0 GHz
DC - 2.5 GHz
DC - 3.0 GHz
DC - 4.0 GHz
DC - 4.0 GHz
0/+5V Control
0/+3V Control
0.3 - 4.0 GHz
0.3 - 4.0 GHz
DC - 4.0 GHz
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
70
140
ns
ns
36
33
18
10
9
8
Min.
Typ.
0.25
0.4
0.5
0.7
23
14
13
12
32
39
36
55
Max.
0.5
0.7
0.8
1.0
Units
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
Insertion Loss
Isolation
Return Loss
Input Power for 1 dB Compression
Input Third Order Intercept
(Two-Tone Input Power = +27 dBm Each Tone)
Switching Characteristics
10 - 300
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC544
/
544E
v00.0206
GaAs MMIC T/R SWITCH,
DC - 4 GHz
Insertion Loss
0
Return Loss
0
INSERTION LOSS (dB)
-10
RETURN LOSS (dB)
-0.5
-20
RFC
RF1, RF2
-1
-30
-1.5
+25C
+85C
-40C
-40
-2
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
FREQUENCY (GHz)
-50
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
FREQUENCY (GHz)
10
SWITCHES - SMT
10 - 301
Isolation Between Ports RFC & RF1 / RF2
0
-5
-10
ISOLATION (dB)
-15
-20
-25
-30
-35
-40
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
FREQUENCY (GHz)
RF1
RF2
Isolation Between Ports RF1 & RF2
0
-5
-10
ISOLATION (dB)
-15
-20
-25
-30
-35
-40
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
FREQUENCY (GHz)
RF1 ON
RF2 ON
Input IP3 vs. Temperature, Vctl = 0/+3V
65
Input IP3 vs. Vctl
65
60
INPUT IP3 (dBm)
INPUT IP3 (dBm)
60
55
55
50
+25C
+85C
-40C
50
+3V
+5V
45
45
40
0
0.5
1
1.5
2
2.5
3
3.5
4
FREQUENCY (GHz)
40
0
0.5
1
1.5
2
2.5
3
3.5
4
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC544
/
544E
v00.0206
GaAs MMIC T/R SWITCH,
DC - 4.0 GHz
Input P1dB vs. Temperature, Vctl = 0/+3V
45
Compression vs. Vctl
45
INPUT P0.1dB & P1dB (dBm)
40
INPUT P1dB (dBm)
40
35
+25C
+85C
-40C
35
30
30
P0.1dB +3V
P0.1dB +5V
P1dB +3V
P1dB +5V
25
25
20
0
0.5
1
1.5
2
2.5
3
3.5
4
FREQUENCY (GHz)
20
0
0.5
1
1.5
2
2.5
3
3.5
4
FREQUENCY (GHz)
10
SWITCHES - SMT
Truth Table
Control Input
A
Low
High
B
Control Voltages
Signal Path
RFC to RF1
On
Off
RFC to RF2
Off
On
State
Low
High
Bias Condition
0 to 0.2 Vdc @ 1 µA Typical
+3 Vdc @ 0.5 µA Typical to
+5 Vdc @ 2 µA Typical (±0.2 Vdc)
High
Low
10 - 302
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC544
/
544E
v00.0206
GaAs MMIC T/R SWITCH,
DC - 4.0 GHz
Absolute Maximum Ratings
RF Input Power (Vctl = 0/+5V)
Control Voltage Range (A & B)
Hot Switch Power Level
(Vctl = 0/+5V)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 7.14 mW/ °C above 85°C)
Thermal Resistance
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
+39 dBm
-0.2 to +12 Vdc
+39 dBm
150 °C
0.465 W
140 °C/W
-65 to +150 °C
-40 to +85 °C
Class 1A
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
DC blocks are required at ports RFC, RF1 and RF2.
10
SWITCHES - SMT
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS].
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
5. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
Outline Drawing
Package Information
Part Number
HMC544
HMC544E
Package Body Material
Low Stress Injection Molded Plastic
RoHS-compliant Low Stress Injection Molded Plastic
Lead Finish
Sn/Pb Solder
100% matte Sn
MSL Rating
MSL1
MSL1
[1]
Package Marking
[3]
H544
XXXX
544E
XXXX
[2]
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
10 - 303
HMC544
/
544E
v00.0206
GaAs MMIC T/R SWITCH,
DC - 4.0 GHz
Typical Application Circuit
10
SWITCHES - SMT
Notes:
1. Set logic gate Vdd = +3V to +5V and use HCT series logic to provide a TTL driver interface.
2. Control inputs A/B can be driven directly with CMOS logic (HC) with Vdd of +3V to +5V applied to the CMOS logic gates.
3. DC Blocking capacitors are required for each RF port as shown. Capacitor value determines lowest frequency of operation.
Pin Descriptions
Pin Number
1, 3, 5
Function
RF2, RF1, RFC
Description
These pins are DC coupled and matched to 50 Ohms.
Blocking capacitors are required.
Interface Schematic
2
GND
This pin must be connected to RF/DC ground.
4
B
See truth and control voltage tables.
6
A
See truth and control voltage tables.
10 - 304
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
