US1A thru US1M
SURFACE MOUNT REVERSE VOLTAGE 50 TO 1000 VOLTS
ULTRA FAST RECTIFIERS FORWARD CURRENT - 1.0 AMPERES
SMA/DO-214AC
.055(1.40)
.062(1.60)
.098(2.50)
.114(2.90)
.157(4.00)
.181(4.60)
.006(.152)
.012(.305)
.078(2.00)
.096(2.44)
.030(0.76)
.060(1.52)
.004(.102)
.008(.203)
.188(4.80)
.208(5.28)
Dimensions in inches and (millimeters)
FEATURES
Glass passivated chip
Ultra fast switching for high efflciency
For surface mount applications
Low forward voltage drop and high current capability
Low reverse leakage current
Plastic material UL flammability classification 94V-0
High temperature soldering 260
o
C/10seconds at terminals
Pb free product are available 99% Sn above can meet RoHS
Environment substance directive request
MECHANICAL DATA
Case JEDEC DO-214AC molded plastic
Case Molded plastic
Polarity Indicated by cathode band
Weight 0.002 ounce, 0.064grams
MAXIMUM RATIXGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load
For capacitive load, derate current by 20%
SYMBOL US1A
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current @ T
L
=75 C
Peak Forward Surge Current 8.3ms Single Half Sine-Wave
Superimposed on Rated Load (JEDEC Method)
Maximum Forward Voltage at 1.0A DC
Maximum DC Reverse Current @T
J
=25
0
C
at Rated DC Blocking Voltage @T
J
=100
0
C
Maximum Reverse Recovery Time (NOTE 1)
Typical Junctionn Capacitance (NOTE 2)
Typical Thermal Resistance (NOTE 3)
Operating Temperature Rang
Storage Temperature Range
0
US1B
100
70
100
US1D
200
140
200
US1G
400
280
400
1.0
30
US1J
600
420
600
US1K
800
560
800
US1M
1000
700
1000
UNITS
Volts
Volts
Volts
Amps
Amps
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
C
J
T
RR
R
JC
50
35
50
1.0
1.3
10
100
20
50
30
1.5
1.7
Volts
A
10
75
0
pF
nS
C/W
0
T
J
T
STG
-55 to +150
-55 to +150
C
C
0
NOTES
1. Measured at 1 MHz and applied reverse Voltag of 4.0VDC
2. Rverse Recovery Test Condibons I
F
= 5A, I
R
= 1A, l
RR
= 25A
3. Thermal Resistance from Junction amblent and from Junction to lead 0.375
(9.5mm) P
.C.B mounted
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US1A thru US1M
SURFACE MOUNT REVERSE VOLTAGE 50 TO 1000 VOLTS
RATINGS AND CHARACTERISTIC CURVES US1A THRU US1M
Fig. 1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50
Noninductive
10
Noninductive
trr
+0.5A
( )
PULSE
GENERATOR
NOTE 2
(+)
25 Vdc
(approx)
( )
D.U.T.
0
-0.25
1
NON-
Inductive
OSCILLOSCOPE
NOTE 1
(+)
NOTES:1. Rise Time=7ns max.
Input Impedance=1 megohm. 22pF
2. Rise Time=10ns max.
Source Impedance=50 Ohms.
-1.0
SET TIME
BASE FOR
10ns/cm
1cm
Fig. 2 - FORWARD CHARACTERISTICS
10
US1A
Fig. 3 - FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT,
AMPERES
2.0
SINGLE PHASE
HALF W AVE
60H
Z
RESISTIVE OR
INDUCTIVE LOAD
P.C.B MOUNTED
ON 0.315x0.315"(8.0x8.0mm)
COPPER PAD AREAS
TYPICAL
1.0
US1G
US1M
IFM. Apk
1.0
0.1
TJ=25 C
0
.01
0
.2
.4
.6
.8
1.0
1.2 1.4
25
50
75
100 125 150 175
o
LEAD TEMPERATURE, C
Fig. 4 - TYPICAL JUNCTION CAPACITANCE
100
JUNCTION CAPACITANCE, pF
Fig. 5 - PEAK FORWARD SURGE CURRENT
0
T
J
=25C
f=1.0MHz
Vsig=50mVp-p
30
25
PEAK FORWARD SURGE
CURRENT, AMPERES
10
20
15
10
5
8.3ms SINGLE HALF SINCE-WAVE
JEDEC METHOD
1
0.1
1
10
100
REVERSE VOLTAGE, VOLTS
1
2
5
10
20
50
100
NUMBER OF CYCLES AT 60Hz
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