ZOWIE
USCD012H THRU USCD014H
FEATURES
*
*
*
*
*
*
*
Halogen-free type
Lead free product , compliance to RoHs
Lead less chip form , no lead damage
Lead-free solder joint , no wire bond & lead frame
Low power loss , High efficiency
High current capability , low VF
Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
Schottky Barrier Diode
(20V~40V / 100mA)
OUTLINE DIMENSIONS
Case : 0603
0.05
1.6 ± 0.1
0.90 ± 0.1
Unit : mm
APPLICATION
*
*
*
*
*
Switching mode power supply applications
Portable equipment battery applications
High frequency rectification
DC / DC Converter
Telecommunication
0.35 ± 0.05
0.70
Typ.
R 0.
20
0.35 ± 0.05
+ 0.2
0.60
- 0.1
Equivalent : SOD-523
MECHANICAL DATA
Case :
Packed with FRP substrate and epoxy underfilled
Terminals :
Pure Tin plated (Lead-Free),
solderable per MIL-STD-750, Method 2026.
Polarity :
Laser Cathode band marking
Weight :
0.003 gram
MARKING
Cathode mark
Voltage class
.
Halogen-free type
Amps class
PACKING
*
3,000 pieces per 7" (178mm ± 2mm) reel
*
5 reels per box
*
6 boxes per carton
Absolute Maximum Ratings (Ta = 25 C)
Rating
ITEM
Repetitive peak reverse voltage
Average forward current
Peak forward surge current
Junction temperature
Operating temperature range
Storage temperature range
o
Symbol
V
RRM
I
F(AV)
I
FSM
T
j
T
opr
T
STG
o
Conditions
0.03
USCD012H
20
100
F
USCD014H
40
Unit
V
mA
A
8.3ms single half sine-wave
2.0
125
-40 to +125
-40 to +125
o
C
Electrical characteristics (Ta = 25 C)
ITEM
Symbol
I
F
= 10mA
I
F
= 50mA
I
F
= 100mA
V
R
= @ 10V , Ta = 25
o
C
Repetitive peak reverse current
I
RRM
V
R
= Max. V
RRM
, Ta = 25 C
Junction capacitance
C
j
R
th(JA)
Thermal resistance
R
th(JL)
Junction to lead
-
110
-
o
o
Conditions
Min.
-
-
-
-
-
-
-
Typ.
0.30
0.35
0.38
1
8
30
160
Max.
-
-
0.40
20
Unit
Forward voltage
V
F
V
uA
50
-
-
o
V
R
= 4V, f = 1.0 MHz
Junction to ambient
pF
C/W
C/W
REV. 0
2007/11
ZOWIE
USCD012H THRU USCD014H
(20V~40V / 100mA)
FIG. 1 - TYPICAL FORWARD CURRENT
DERATING CURVE
0.12
2.5
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
8.3ms Single Half Sine-Wave
(JEDEC Method)
AVERAGE FORWARD CURRENT, (A)
0.10
PEAK FORWARD SURGE CURRENT, (A)
0
25
50
75
100
o
2.0
0.08
1.5
0.06
1.0
0.04
0.02
0.5
0
125
150
0
1
10
NUMBER OF CYCLES AT 60Hz
100
LEAD TEMPERATURE, ( C)
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
1000
IINSTANTANEOUS FORWARD CURRENT, (mA)
1000
INSTANTANEOUS REVERSE CURRENT,
MICROAMPERES
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
100
T
J
=100 C
o
100
10
T
J
=25 C
o
10
1.0
1
Ta=25 C
o
0.10
0.1
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.01
0
10
20
30
40
FORWARD VOLTAGE, (V)
PERCENT OF RATED PEAK REVERSE VOLTAGE V
R
(V)
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
1000
JUCTION CAPACITANCE (pF)
100
10
1
0
5
10
15
20
REVERSE VOLTAGE, (V)
REV. 0
2007/11
Microchip MCU
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