Modular Technologies
SMART
SM540161014EXSX
February 1996
Preliminary
SM540161014EXSX
64MByte (16M x 40) CMOS DRAM Module
- (3.3V, ECC)
General Description
The SM540161014EXSX is a high performance,
64-megabyte dynamic RAM module organized as 16M
words by 40 bits, in a 72-pin, leadless single-in-line
memory module (SIMM) package.
The module utilizes fourty CMOS 16Mx1 dynamic RAMs
in surface mount package on an epoxy laminate substrate.
The devices are accompanied by decoupling capacitors for
improved noise immunity.
SM540161014EXSX
module
supports
4K
refresh.
•
•
•
•
Features
•
•
•
High Density : 64Mbyte
Fast Access Time of 60/70/80 ns (max.)
Low Power :
Active :
11.52/10.08/8.64W (max.) - 4K
Standby :
288mW (max.) - TTL
144mW (max.) - CMOS
TTL-compatible inputs and outputs
Separate power and ground planes to
improve noise immunity
Single power supply of 3.3V±0.3V
Height : 1.750" max.
Functional Diagram
RAS0#
CAS0#
16M x 4
DRAM
Block
16M x 4
DRAM
Block
16M x 4
DRAM
Block
16M x 4
DRAM
Block
16M x 4
DRAM
Block
16M x 4
DRAM
Block
16M x 4
DRAM
Block
16M x 4
DRAM
Block
16M x 4
DRAM
Block
16M x 4
DRAM
Block
DQ0~DQ39
Note: 1.
2.
3.
A0~A11 : To all devices
WE# : To all devices
Each 16Mx4 DRAM Block comprises of four 16Mx1 DRAMs.
V
CC
V
SS
Decoupling capacitors
to all devices
All specifications of this device are subject to change without notice.
Corporate Headquarters:
4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: + 44-1908 234030 • Fax: + 44-1908-234191
Asia/Pacific:
Suite 6A, 64 Canning Hwy., Victoria Park, Perth, WA 6106, Australia • Tel: + 61-9-361-9705 • Fax: + 61-9-361-9715
1
Modular Technologies
SMART
SM540161014EXSX
February 1996
Preliminary
Pin Name
A0~A11
DQ0~DQ39
CAS0#
RAS0#
WE#
PD1~PD5
V
CC
V
SS
NC
Addresses
Data Inputs/Outputs
Column Address Strobe
Row Address Strobe
Write Enable
Presence Detects
Power Supply
Ground
No Connection
Pin
No.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
Pin
Designation
V
SS
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
V
CC
PD5
A0
A1
A2
A3
A4
A5
A6
NC
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
A7
DQ16
V
CC
A8
A9
NC
NC
DQ17
DQ18
Pin
No.
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
Pin
Designation
DQ19
DQ20
V
SS
CAS0#
A10
A11
NC
RAS0#
NC
DQ21
WE#
V
SS
DQ22
DQ23
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
DQ31
V
CC
DQ32
DQ33
DQ34
DQ35
DQ36
DQ37
DQ38
PD1
PD2
PD3
PD4
DQ39
V
SS
Presence Detect Pins
Pin
PD1
PD2
PD3
PD4
PD5
Access Time
60ns
70ns
V
SS
V
SS
V
SS
V
SS
NC
V
SS
NC
NC
NC
NC
80ns
V
SS
V
SS
NC
V
SS
NC
(Note: PD5 is grounded through a 2.6KΩ
resistor)
Corporate Headquarters:
4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: + 44-1908 234030 • Fax: + 44-1908-234191
Asia/Pacific:
Suite 6A, 64 Canning Hwy., Victoria Park, Perth, WA 6106, Australia • Tel: + 61-9-361-9705 • Fax: + 61-9-361-9715
2
Modular Technologies
SMART
SM540161014EXSX
February 1996
Preliminary
Absolute Maximum Ratings
Parameter
Voltage on any pin relative to V
SS
Power Dissipation
Operating Temperature
Storage Temperature
Short Circuit Output Current
Symbol
V
T
P
T
T
opr
T
stg
I
OS
Ratings
- 0.5 to +4.6
40
0 to +70
- 55 to +150
50
Unit
V
W
°C
°C
mA
Recommended DC Operating Conditions
(T
A
= 0 to +70°C)
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Symbol
V
CC
V
SS
V
IH
V
IL
Min
3.0
0
2.0
-0.3
Typ
3.3
0
-
-
Max
3.6
0
V
CC
+0.3
0.8
Unit
V
V
V
V
DC Characteristics
(V
CC
= 3.3V±0.3V, V
SS
= 0V, T
A
= 0 to +70
°C)
Max.
70ns
2800
80
Parameter
Operating Current
Symbol
I
CC1
Standby Current
I
CC2
RAS#-only Refresh
Current
CAS#-before-RAS#
Refresh Current
Fast Page Mode
Current
I
CC3
I
CC4
I
CC5
Test Conditions
RAS#, CAS# cycling; t
RC
= min.
TTL Interface
RAS#, CAS#
≥
V
IH
D
out
= High-Z
CMOS Interface
RAS#, CAS#
≥
V
CC
- 0.2V
D
out
= High-Z
CAS#=V
IH
; RAS#, Address
cycling @ t
RC
=min.
RAS#, CAS# cycling @
t
RC
=min.
RAS#≤V
IL
, CAS#, Address
cycling @ t
PC
=min.
60ns
3200
80
80ns
2400
80
Unit
mA
mA
Note
1, 2
40
3200
3200
2800
40
2800
2800
2400
40
2400
2400
2000
mA
mA
mA
mA
1, 3
2
Corporate Headquarters:
4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: + 44-1908 234030 • Fax: + 44-1908-234191
Asia/Pacific:
Suite 6A, 64 Canning Hwy., Victoria Park, Perth, WA 6106, Australia • Tel: + 61-9-361-9705 • Fax: + 61-9-361-9715
3
Modular Technologies
SMART
SM540161014EXSX
February 1996
Preliminary
DC Characteristics (contd.)
Parameter
Symbol
Test Conditions
0V
≤
V
in
≤
V
CC
+0.5V
0V
≤V
out
≤
V
CC
Dout = Disable
High I
out
= -2mA
Low I
out
= 2mA
60ns
Min
Max
-400
400
-10
10
2.4
-
-
0.4
70ns
Min
Max
-400
400
-10
10
2.4
-
-
0.4
80ns
Min
Max
-400
400
-10
10
2.4
-
-
0.4
Unit
µA
µA
V
V
Input Leakage Current
I
LI
Output Leakage Current I
LO
Output High Voltage
Output Low Voltage
Notes:
V
OH
V
OL
1. Values depend on output load condition when the device is selected. Maximum values are specified at the output open
condition.
2. Address can be changed once or less while RAS# = V
IL
.
3. Address can be changed once or less while CAS# = V
IH
.
Capacitance
(T
A
=+25°C, V
CC
= 3.3V±0.3V)
Parameter
Input Capacitance (Address)
Input Capacitance (RAS#, CAS#, WE#)
Input/Output Capacitance (DQ0~DQ39)
Notes:
Capacitance is sampled per Mil-Std-883.
Symbol
C
I1
C
I2
C
I/O
Max
207
287
14
Unit
pF
pF
pF
Corporate Headquarters:
4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: + 44-1908 234030 • Fax: + 44-1908-234191
Asia/Pacific:
Suite 6A, 64 Canning Hwy., Victoria Park, Perth, WA 6106, Australia • Tel: + 61-9-361-9705 • Fax: + 61-9-361-9715
4
Modular Technologies
SMART
SM540161014EXSX
February 1996
Preliminary
AC Characteristics
(T
A
= 0 to +70
°C,
V
CC
= 3.3V±0.3V, V
SS
= 0V)
Parameter
Random read/write cycle time
Access time from RAS#
Access time from CAS#
Access time from column address
Output buffer turn-off time
Transition time (rise and fall)
RAS# precharge time
RAS# pulse width
RAS# hold time
CAS# hold time
CAS# pulse width
RAS# to CAS# delay time
RAS# to column address delay time
CAS# to RAS# precharge time
Row address set-up time
Row address hold time
Column address set-up time
Column address hold time
Column address to RAS# lead time
Read command set-up time
Read command hold time to CAS#
Read command hold time to RAS#
Write command hold time
Write command pulse width
Write command to RAS# lead time
Write command to CAS# lead time
Data-in set-up time
Data-in hold time
Refresh period (4096 cycles)
Write command set-up time
CAS# set-up time (CBR refresh)
CAS# hold time (CBR refresh)
RAS# precharge to CAS# hold time
Access time from CAS# precharge
Fast page mode cycle time
CAS# precharge time (Fast page)
RAS# pulse width (Fast page)
RAS# pulse width (Self refresh)
RAS# precharge time (Self refresh)
Symbol
t
RC
t
RAC
t
CAC
t
AA
t
OFF
t
T
t
RP
t
RAS
t
RSH
t
CSH
t
CAS
t
RCD
t
RAD
t
CRP
t
ASR
t
RAH
t
ASC
t
CAH
t
RAL
t
RCS
t
RCH
t
RRH
t
WCH
t
WP
t
RWL
t
CWL
t
DS
t
DH
t
REF
t
WCS
t
CSR
t
CHR
t
RPC
t
ACP
t
PC
t
CP
t
RASC
t
RASS
t
RPS
60ns
Min
Max
110
-
-
60
-
15
-
30
0
15
3
50
40
-
60
10000
15
-
60
-
15
10000
20
45
15
30
5
-
0
-
10
-
0
-
10
-
30
-
0
-
0
-
0
-
10
-
10
-
15
-
15
-
0
-
10
-
-
64
0
-
10
-
10
-
5
-
-
35
40
-
10
-
60
200000
100
-
110
-
70ns
Min
Max
130
-
-
70
-
20
-
35
0
20
3
50
50
-
70
10000
20
-
70
-
20
10000
20
50
15
35
5
-
0
-
10
-
0
-
15
-
35
-
0
-
0
-
0
-
15
-
15
-
20
-
20
-
0
-
15
-
-
64
0
-
10
-
15
-
5
-
-
40
45
-
10
-
70
200000
100
-
130
-
80ns
Min
Max
150
-
-
80
-
20
-
40
0
20
3
50
60
-
80
10000
20
-
80
-
20
10000
20
60
15
40
5
-
0
-
10
-
0
-
15
-
40
-
0
-
0
-
0
-
15
-
15
-
20
-
20
-
0
-
15
-
-
64
0
-
10
-
15
-
5
-
-
45
50
-
10
-
80
200000
100
-
150
-
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ns
ns
ns
ns
ns
ns
ns
ns
µs
ns
Notes
3, 4
3, 4, 5
3, 10
6
2
4
10
8
9
9
7
1
1
3, 11
12
13
13
Corporate Headquarters:
4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: + 44-1908 234030 • Fax: + 44-1908-234191
Asia/Pacific:
Suite 6A, 64 Canning Hwy., Victoria Park, Perth, WA 6106, Australia • Tel: + 61-9-361-9705 • Fax: + 61-9-361-9715
5
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