A43L0632
Preliminary
Document Title
512K X 32 Bit X 2 Banks Synchronous DRAM
Revision History
Rev. No.
0.0
512K X 32 Bit X 2 Banks Synchronous DRAM
History
Initial issue
Issue Date
August 1, 2005
Remark
Preliminary
PRELIMINARY
(August, 2005, Version 0.0)
AMIC Technology, Corp.
A43L0632
Preliminary
Features
Power supply
- VDD: 3.3V VDDQ : 3.3V
LVTTL compatible with multiplexed address
Two banks / Pulse
RAS
MRS cycle with address key programs
- CAS Latency (2 & 3)
- Burst Length (1,2,4,8 & full page)
-
Burst Type (Sequential & Interleave)
Clock Frequency (max) : 167MHz @ CL=3 (-6)
143MHz @ CL=3 (-7)
512K X 32 Bit X 2 Banks Synchronous DRAM
All inputs are sampled at the positive going edge of the
system clock
DQM for masking
Auto & self refresh
64ms refresh period (4K cycle)
Industrial operating temperature range: -40ºC to +85ºC
for -U series.
Available in 90 Balls CSP (8mm X 13mm)
Package is available to lead free (-F series)
General Description
The A43L0632 is 33,554,432 bits synchronous high data
rate Dynamic RAM organized as 2 X 524,288 words by 32
bits, fabricated with AMIC’s high performance CMOS
technology. Synchronous design allows precise cycle
control with the use of system clock. I/O transactions are
possible on every clock cycle. Range of operating
frequencies, programmable latencies allows the same
device to be useful for a variety of high bandwidth, high
performance memory system applications.
Pin Configuration
90 Balls CSP (8 mm x 13 mm)
Top View
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
1
DQ
26
DQ
28
VSSQ
VSSQ
VDDQ
VSS
A4
A7
CLK
DQM
1
VDDQ
VSSQ
VSSQ
DQ
11
DQ
13
90 Ball (8X13) CSP
2
3
7
DQ
24
VSS
VDD
VDDQ
VSSQ
VDDQ
DQ
27
DQ
25
DQ
22
DQ
29
DQ
30
DQ
17
DQ
31
NC
NC
A2
DQM
3
A3
A5
A6
A10
A8
NC
NC
CKE
A9
BA
NC
DQ
8
DQ
10
DQ
12
VDDQ
DQ
15
NC
VSS
DQ
9
DQ
14
VSSQ
VSS
CAS
8
DQ
23
VSSQ
DQ
20
DQ
18
DQ
16
DQM
2
A0
NC
CS
9
DQ
21
DQ
19
VDDQ
VDDQ
VSSQ
VDD
A1
NC
RAS
WE
DQM
0
VSSQ
VDDQ
VDDQ
DQ
4
DQ
2
VDD
DQ
6
DQ
1
VDDQ
VDD
DQ
7
DQ
5
DQ
3
VSSQ
DQ
0
PRELIMINARY
(August, 2005, Version 0.0)
1
AMIC Technology, Corp.
A43L0632
Block Diagram
LWE
I/O Control
Bank Select
Data Input Register
DQM
Row Buffer
Refresh Counter
Row Decoder
Output Buffer
512K X 32
Sense AMP
CLK
Address Register
512K X 32
DQi
LCBR
LRAS
Column Buffer
ADD
Column Decoder
Latency & Burst Length
LRAS
Programming Register
DQM
LWCBR
LCAS
LRAS
LCBR
LWE
Timing Register
CLK
CKE
CS
RAS
CAS
WE
DQM
PRELIMINARY
(August, 2005, Version 0.0)
2
AMIC Technology, Corp.
A43L0632
Pin Descriptions
Symbol
Name
Description
CLK
CS
System Clock
Chip Select
Active on the positive going edge to sample all inputs.
Disables or Enables device operation by masking or enabling all inputs except
CLK, CKE and DQM
Masks system clock to freeze operation from the next clock cycle.
CKE
Clock Enable
CKE should be enabled at least one clock + tss prior to new command.
Disable input buffers for power down in standby.
Row / Column addresses are multiplexed on the same pins.
A0~A10
Address
Row address : RA0~RA10, Column address: CA0~CA7
Selects bank to be activated during row address latch time.
BA
Bank Select Address
Selects band for read/write during column address latch time.
Row Address Strobe
Latches row addresses on the positive going edge of the CLK with RAS low.
Enables row access & precharge.
Column Address
Strobe
Write Enable
Data Input/Output
Mask
Data Input/Output
Power
Supply/Ground
Data Output
Power/Ground
No Connection
RAS
Latches column addresses on the positive going edge of the CLK with
CAS
low.
Enables column access.
Enables write operation and Row precharge.
Makes data output Hi-Z, t SHZ after the clock and masks the output.
Blocks data input when DQM active.
Data inputs/outputs are multiplexed on the same pins.
Power Supply: +3.3V
±
0.3V/Ground
Provide isolated Power/Ground to DQs for improved noise immunity.
CAS
WE
DQMi
DQ
0-31
VDD/VSS
VDDQ/VSSQ
NC/RFU
PRELIMINARY
(August, 2005, Version 0.0)
3
AMIC Technology, Corp.
A43L0632
Absolute Maximum Ratings*
Voltage on any pin relative to VSS (Vin, Vout ) . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -1.0V to +4.6V
Voltage on VDD supply relative to VSS (VDD, VDDQ )
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-1.0V to + 4.6V
Storage Temperature (T
STG
) . . . . . . . . . . -55
°
C to +150
°
C
Soldering Temperature X Time (T
SLODER
) . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260
°
C X 10sec
Power Dissipation (P
D
) . . . . . . . . . . . . . . . . . . . . . . . . 0.8W
Short Circuit Current (Ios) . . . . . . . . . . . . . . . . . . . . 50mA
*Comments
Permanent device damage may occur if “Absolute
Maximum Ratings” are exceeded.
Functional operation should be restricted to recommended
operating condition.
Exposure to higher than recommended voltage for
extended periods of time could affect device reliability.
Capacitance (T
A
=25°C, f=1MHz)
Parameter
Symbol
Condition
Min
Max
Unit
Input Capacitance
CI1
CI2
A0 to A10, BA
CLK, CKE,
CS
,
RAS
,
CAS
,
WE
, DQM
DQ
0
to DQ
31
2.5
2.5
4.0
3.8
3.8
6.5
pF
pF
pF
Data Input/Output Capacitance
CI/O
DC Electrical Characteristics
Recommend operating conditions
(Voltage referenced to VSS=0V, T
A
= 0ºC to +70ºC for commercial or T
A
=-40ºC to +85ºC for extended)
Parameter
Symbol
Min
Typ
Max
Unit
Note
Supply Voltage
DQ Supply Voltage
Input High Voltage
Input Low Voltage
Output High Voltage
Output Low Voltage
Input Leakage Current
Output Leakage Current
Output Loading Condition
VDD
VDDQ
V
IH
V
IL
V
OH
V
OL
I
IL
I
OL
3
3
2
-0.3
2.4
-
-5
-5
3.3
3.3
3
-
-
-
-
-
3.6
3.6
VDD+0.3
0.8
-
0.4
5
5
V
V
V
V
V
V
µ
A
µ
A
Note 1
I
OH
= -0.1mA
I
OL
= 0.1mA
Note 2
Note 3
See Fig. 1 (Page 6)
Note:
1. V
IL
(min) = -1.5V AC (pulse width
≤
5ns).
2. Any input 0V
≤
VIN
≤
VDD + 0.3V, all other pins are not under test = 0V
3. Dout is disabled, 0V
≤
Vout
≤
VDD
PRELIMINARY
(August, 2005, Version 0.0)
4
AMIC Technology, Corp.
MEMS传感器
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