A43E16161
Preliminary
Document Title
1M X 16 Bit X 2 Banks Low Power Synchronous DRAM
Revision History
Rev. No.
0.0
1M X 16 Bit X 2 Banks Low Power Synchronous DRAM
History
Initial issue
Issue Date
August 2, 2005
Remark
Preliminary
PRELIMINARY
(August, 2005, Version 0.0)
AMIC Technology, Corp.
A43E16161
Preliminary
Features
Low power supply
- VDD: 1.8V VDDQ : 1.8V
LVCMOS compatible with multiplexed address
Two banks / Pulse
RAS
MRS cycle with address key programs
- CAS Latency (2 & 3)
- Burst Length (1,2,4,8 & full page)
-
Burst Type (Sequential & Interleave)
All inputs are sampled at the positive going edge of the
system clock
Deep Power Down Mode
DQM for masking
Auto & self refresh
Clock Frequency (max) : 105MHz @ CL=3 (-95)
133MHz @ CL=3 (-75)
1M X 16 Bit X 2 Banks Low Power Synchronous DRAM
64ms refresh period (4K cycle)
Self refresh with programmable refresh period through
EMRS cycle
Programmable Power Reduction Feature by partial
array activation during Self-refresh through EMRS
cycle
Auto TCSR
Industrial operating temperature range: -40ºC to +85ºC
for -U series.
Available in 54-pin TSOP(II) package
Package is available to lead free (-F series)
General Description
The A43E16161 is 33,554,432 bits Low Power
synchronous high data rate Dynamic RAM organized as 2
X 1,048,576 words by 16 bits, fabricated with AMIC’s high
performance CMOS technology. Synchronous design
allows precise cycle control with the use of system clock.
I/O transactions are possible on every clock cycle. Range
of operating frequencies, programmable latencies allows
the same device to be useful for a variety of high
bandwidth,
high
performance
memory
system
applications.
Pin Configuration
54 TSOP (II)
DQM
0
DQM
1
VDD
VDD
RAS
VDD
DQ
8
CAS
CKE
VSS
VSS
VSS
A10
WE
VSS
NC
CLK
CS
BS
A3
A4
A5
A6
A7
A8
VDDQ
A2
54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28
A1
A0
A43E16161V
1
NC
2
DQ
7
3
DQ
6
4
VDDQ
5
VSSQ
6
DQ
5
7
DQ
4
8
DQ
3
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27
DQ
1
DQ
13
VDDQ
VSSQ
VSSQ
DQ
14
DQ
12
DQ
11
VSSQ
VDDQ
DQ
15
DQ
10
DQ
2
DQ
0
DQ
9
NC
PRELIMINARY
(August, 2005, Version 0.0)
1
AMIC Technology, Corp.
A9
A43E16161
Block Diagram
LWE
I/O Control
Bank Select
Data Input Register
DQM
Row Buffer
Refresh Counter
Row Decoder
Output Buffer
1M X 16
Sense AMP
CLK
Address Register
1M X 16
DQi
LCBR
LRAS
Column Buffer
ADD
Column Decoder
Latency & Burst Length
LRAS
Programming Register
DQM
LWCBR
LCAS
LRAS
LCBR
LWE
Timing Register
CLK
CKE
CS
RAS
CAS
WE
DQM
PRELIMINARY
(August, 2005, Version 0.0)
2
AMIC Technology, Corp.
A43E16161
Pin Descriptions
Symbol
Name
Description
CLK
CS
System Clock
Chip Select
Active on the positive going edge to sample all inputs.
Disables or Enables device operation by masking or enabling all inputs except
CLK, CKE and DQM
Masks system clock to freeze operation from the next clock cycle.
CKE
Clock Enable
CKE should be enabled at least one clock + tss prior to new command.
Disable input buffers for power down in standby.
Row / Column addresses are multiplexed on the same pins.
A0~A10
Address
Row address : RA0~RA10, Column address: CA0~CA8
Selects bank to be activated during row address latch time.
BA
Bank Select Address
Selects band for read/write during column address latch time.
Row Address Strobe
Latches row addresses on the positive going edge of the CLK with RAS low.
Enables row access & precharge.
Column Address
Strobe
Write Enable
Data Input/Output
Mask
Data Input/Output
Power
Supply/Ground
Data Output
Power/Ground
No Connection
RAS
Latches column addresses on the positive going edge of the CLK with
CAS
low.
Enables column access.
Enables write operation and Row precharge.
Makes data output Hi-Z, t SHZ after the clock and masks the output.
Blocks data input when DQM active.
Data inputs/outputs are multiplexed on the same pins.
Power Supply: +1.7V ~ 1.95V/Ground
Provide isolated Power/Ground to DQs for improved noise immunity.
CAS
WE
DQMi
DQ
0-31
VDD/VSS
VDDQ/VSSQ
NC/RFU
PRELIMINARY
(August, 2005, Version 0.0)
3
AMIC Technology, Corp.
A43E16161
Absolute Maximum Ratings*
Voltage on any pin relative to VSS (Vin, Vout ) . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -1.0V to +2.6V
Voltage on VDD supply relative to VSS (VDD, VDDQ )
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-1.0V to + 2.6V
Storage Temperature (T
STG
) . . . . . . . . . . -55
°
C to +150
°
C
Soldering Temperature X Time (T
SLODER
) . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260
°
C X 10sec
Power Dissipation (P
D
) . . . . . . . . . . . . . . . . . . . . . . . . 0.8W
Short Circuit Current (Ios) . . . . . . . . . . . . . . . . . . . . 50mA
*Comments
Permanent device damage may occur if “Absolute
Maximum Ratings” are exceeded.
Functional operation should be restricted to recommended
operating condition.
Exposure to higher than recommended voltage for
extended periods of time could affect device reliability.
Capacitance (T
A
=25°C, f=1MHz)
Parameter
Symbol
Condition
Min
Max
Unit
Input Capacitance
CI1
CI2
A0 to A10, BA
CLK, CKE,
CS
,
RAS
,
CAS
,
WE
, DQM
DQ
0
to DQ
31
2.0
2.0
3.5
4.0
4.0
6.0
pF
pF
pF
Data Input/Output Capacitance
CI/O
DC Electrical Characteristics
Recommend operating conditions
(Voltage referenced to VSS=0V, T
A
= 0ºC to +70ºC for commercial or T
A
=-40ºC to +85ºC for extended)
Parameter
Symbol
Min
Typ
Max
Unit
Note
Supply Voltage
DQ Supply Voltage
Input High Voltage
Input Low Voltage
Output High Voltage
Output Low Voltage
Input Leakage Current
Output Leakage Current
Output Loading Condition
VDD
VDDQ
V
IH
V
IL
V
OH
V
OL
I
IL
I
OL
1.7
1.7
0.8*VDDQ
-0.3
VDDQ - 0.2
-
-1
-1.5
1.8
1.8
-
-
-
-
-
-
1.95
1.95
VDDQ+0.3
0.3
-
0.2
1
1.5
V
V
V
V
V
V
µ
A
µ
A
Note 1
I
OH
= -0.1mA
I
OL
= 0.1mA
Note 2
Note 3
See Fig. 1 (Page 6)
Note:
1. V
IL
(min) = -1.5V AC (pulse width
≤
5ns).
2. Any input 0V
≤
VIN
≤
VDD + 0.3V, all other pins are not under test = 0V
3. Dout is disabled, 0V
≤
Vout
≤
VDD
PRELIMINARY
(August, 2005, Version 0.0)
4
AMIC Technology, Corp.
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