85HF(R) Series
Vishay Semiconductors
Standard Recovery Diodes,
(Stud Version), 85 A
FEATURES
• High surge current capability
• Stud cathode and stud anode version
• Leaded version available
• Types up to 1600 V V
RRM
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
TYPICAL APPLICATIONS
DO-203AB (DO-5)
• Battery chargers
• Converters
• Power supplies
85 A
PRODUCT SUMMARY
I
F(AV)
• Machine tool controls
• Welding
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
85HF(R)
10 TO 120
85
T
C
50 Hz
60 Hz
50 Hz
60 Hz
Range
100 to 1200
- 65 to 180
140
133
1700
1800
14 500
13 500
1400/1600
- 65 to 150
110
140/160
UNITS
A
°C
A
A
I
F(AV)
I
F(RMS)
I
FSM
I
2
t
V
RRM
T
J
A
2
s
V
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
10
20
40
60
85HF(R)
80
100
120
140
160
V
RRM
, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
100
200
400
600
800
1000
1200
1400
1600
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
200
300
500
700
900
1100
1300
1500
1700
4.5
9
I
RRM
MAXIMUM
AT T
J
= T
J
MAXIMUM
mA
Document Number: 93529
Revision: 25-May-09
For technical questions, contact:
ind-modules@vishay.com
www.vishay.com
1
85HF(R) Series
Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at case temperature
Maximum RMS forward current
SYMBOL
I
F(AV)
I
F(RMS)
t = 10 ms
Maximum peak, one-cycle forward,
non-repetitive surge current
I
FSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
t
for fusing
Value of threshold voltage
(up to 1200 V)
Value of threshold voltage
(for 1400 V, 1600 V)
Value of forward slope resistance
(up to 1200 V)
Value of forward slope resistance
(for 1400 V, 1600 V)
Maximum forward voltage drop
I
2
t
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
TEST CONDITIONS
180° conduction, half sine wave
85HF(R)
10 to 120
85
140
133
1700
1800
1450
Sinusoidal half wave,
initial T
J
= T
J
maximum
1500
14 500
13 500
10 500
9400
16 000
0.68
V
F(TO)
T
J
= T
J
maximum
0.69
1.62
r
f
T
J
= T
J
maximum
1.75
V
FM
I
pk
= 267 A, T
J
= 25 °C, t
p
= 400 µs rectangular wave
1.2
1.4
V
m
V
A
2
s
A
2
s
A
110
140/160
UNITS
A
°C
A
Standard Recovery Diodes,
(Stud Version), 85 A
t = 0.1 ms to 10 ms, no voltage reapplied
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating and
storage temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heatsink
Maximum shock
(1)
Maximum constant vibration
(1)
Maximum constant acceleration
(1)
Maximum allowable mounting
torque (+ 0 %, - 10 %)
50 Hz
Stud outwards
Not lubricated thread, tighting on nut
(2)
Lubricated thread, tighting on nut
(2)
Not lubricated thread, tighting on hexagon
Lubricated thread, tighting on hexagon
(3)
Approximate weight
Case style
Notes
(1)
Available only for 88HF
(2)
Recommended for pass-through holes
(3)
Recommended for holed threaded heatsinks
www.vishay.com
2
Unleaded device
See dimensions - link at the end of datasheet
(3)
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
DC operation
TEST CONDITIONS
85HF(R)
10 to 120
- 65 to 180
140/160
- 65 to 150
UNITS
°C
0.35
K/W
0.25
1500
20
5000
3.4 (30)
2.3 (20)
4.2 (37)
3.2 (28)
17
0.6
DO-203AB (DO-5)
g
oz.
N·m
(lbf · in)
g
Mounting surface, smooth, flat and greased
For technical questions, contact:
ind-modules@vishay.com
Document Number: 93529
Revision: 25-May-09
85HF(R) Series
Standard Recovery Diodes,
(Stud Version), 85 A
R
thJC
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
0.10
0.11
0.13
0.17
0.26
RECTANGULAR CONDUCTION
0.08
0.11
0.13
0.17
0.26
T
J
= T
J
maximum
K/W
TEST CONDITIONS
UNITS
Vishay Semiconductors
Note
• The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
180
170
160
150
85HF(R)
Series (100V to 1200V)
RthJC (DC) = 0.35 K/W
150
85HF(R)
Series (1400V to 1600V)
RthJC (DC) = 0.35 K/W
140
Conduction Angle
Conduction Angle
130
120
30°
140
130
60°
30°
110
90°
120°
180°a
60°
90°
120°
180°
100
0 10 20 30 40 50 60 70
80
90 100
Average Forward Current (A)
0 10 20 30 40 50 60 70
80
90 100
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
Maximum Allowable Case Temperature (°C)
85HF(R)
Series (100V to 1200V)
RthJC (DC) = 0.35 K/W
Maximum Allowable Case Temperature (°C)
180
170
160
150
150
85HF(R)
Series (1400V to 1600V)
RthJC (DC) = 0.35 K/W
140
130
120
30°
Conduction Period
Conduction Period
30°
140
130
0
20
60°
90°
120°
180°
DC
110
100
0
20
60°
90°
120°
180°
DC
40
60
80
100 120 140
40
60
80
100 120 140
Average Forward Current (A)
Average Forward Current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Document Number: 93529
Revision: 25-May-09
For technical questions, contact:
ind-modules@vishay.com
www.vishay.com
3
85HF(R) Series
Vishay Semiconductors
90
80
70
60
50
40
30
20
10
0
0
0
10 20 30 40 50 60 70
80
90
20 40 60
80
100 120 140 160 180
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Standard Recovery Diodes,
(Stud Version), 85 A
180°
120°
90°
60°
30°
1K
Maximum Average Forward Power Loss (W)
0.7
Rth
1.
2K
3K
5
/
W
W
SA
K/
W
K/
=0
/
W
.5 K
/
W
-D
RMS Limit
/
W
elta
R
Conduction Angle
85HF(R)
Series
(100V to 1200V)
Tj = 180˚C
5 K/
W
W
10 K/
Fig. 5 - Forward Power Loss Characteristics
Maximum Average Forward Power Loss (W)
120
100
80
DC
180°
120°
90°
60°
30°
0.7
1
K/
W
1.5
2K
3K
Conduction Period
85HF(R)
Series
(100V to 1200V)
Tj = 180˚C
Rt
hS
A=
0.5
W
K/
K/
K/
W
W
-D
/
W
elt
aR
60
RMS Limit
40
20
0
0
20
40
60
80
/
W
5 K/
W
10 K/W
0
100 120 140
20 40 60
80
100 120 140 160 180
Maximum Allowable Ambient Temperature (°C)
Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
Maximum Average Forward Power Loss (W)
100
90
80
70
60
50
40
30
20
10
0
0
180°
120°
90°
60°
30°
0.7
K/
W
Rt
1
1.5
2K
hS
K/
W
A=
0.5
W
K/
K /
W
-D
RMS Limit
/
W
/
W
elt
aR
3K
Conduction Angle
85HF(R)
Series
(1400V, 1600V)
Tj = 150˚C
5 K/
W
10 K/W
10 20 30 40 50 60 70
80
90
0
Average Forward Current (A)
25
50
75
100
125
150
Maximum Allowable Ambient Temperature (°C)
Fig. 7 - Forward Power Loss Characteristics
www.vishay.com
4
For technical questions, contact:
ind-modules@vishay.com
Document Number: 93529
Revision: 25-May-09
85HF(R) Series
Standard Recovery Diodes,
(Stud Version), 85 A
Maximum Average Forward Power Loss (W)
Vishay Semiconductors
140
120
100
80
60
40
20
0
0
20
40
60
80
100 120 140
0
25
50
75
100
125
150
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
DC
180°
120°
90°
60°
30°
Rt
hS
A
=
W
K/
0.7
1K
1.5
0.
5
K/
/
W
W
-D
elt
RMS Limit
Conduction Period
85HF(R)
Series
(1400V, 1600V)
Tj = 150˚C
2K
K/
W
/
W
a
R
3 K/
W
5 K/
W
10 K/W
Fig. 8 - Forward Power Loss Characteristics
1600
Peak Half Sine Wave Forward Current (A)
1400
1200
1000
800
600
400
1
Instantaneous Forward Current (A)
At Any Rated Load Condition And
With
Rated
Vrrm
Applied Following Surge.
Initial Tj = Tj Max.
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
10000
Tj = 25°C
Tj = Tj Max.
1000
100
85HF(R)
Series
up
to 1200V
85HF(R)
Series
10
10
100
0
1
2
3
4
5
6
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Instantaneous Forward Voltage (V)
Fig. 9 - Maximum Non-Repetitive Surge Current
Fig. 11 - Forward Voltage Drop Characteristics
(up to 1200 V)
1800
Peak Half Sine Wave Forward Current (A)
Instantaneous Forward Current (A)
Maximum
Non
Repetitive Surge Current
Versus
Pulse Train Duration.
1600
Initial Tj = Tj Max.
No Voltage
Reapplied
1400
Rated
Vrrm
Reapplied
1000
Tj = Tj Max.
1200
1000
800
600
400
85HF(R)
Series
100
Tj = 25°C
10
88HF
(R) Series
200
0.01
1
0.1
Pulse Train Duration (s)
1
0
0.5
1
1.5
2
2.5
Instantaneous Forward Voltage (V)
Fig. 10 - Maximum Non-Repetitive Surge Current
Fig. 12 - Forward Voltage Drop Characteristics
(for 1400 V, 1600 V)
Document Number: 93529
Revision: 25-May-09
For technical questions, contact:
ind-modules@vishay.com
www.vishay.com
5
stm32/stm8
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
