PD-96923E
IRHNJ67230
JANSR2N7591U3
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-0.5)
Product Summary
Part Number
IRHNJ67230
IRHNJ63230
Radiation Level
100 kRads(Si)
300 kRads(Si)
RDS(on)
0.13
0.13
I
D
16A
16A
QPL Part Number
JANSR2N7591U3
JANSF2N7591U3
SMD-0.5
200V, N-CHANNEL
REF: MIL-PRF-19500/746
R
TECHNOLOGY
6
Description
IR HiRel R6 technology provides high performance power
MOSFETs for space applications. These devices have been
characterized for both Total Dose and Single Event Effect
(SEE) with useful performance up to LET of 90 MeV-cm
2
/mg.
The combination of low R
DS
(on) and low gate charge reduces
the power losses in switching applications such as DC-DC
converters and motor controllers. These devices retain all of
the well established advantages of MOSFETs such as voltage
control, fast switching and temperature stability of electrical
parameters.
Features
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Simple Drive Requirements
Hermetically Sealed
Ceramic Package
Light Weight
Surface Mount
ESD Rating: Class 3A per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Symbol
I
D1
@ V
GS
= 12V, T
C
= 25°C
I
DM
@ T
C
= 25°C
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Pre-Irradiation
Parameter
Value
16
10
64
75
0.6
±20
60
16
7.5
8.6
-55 to + 150
300 (for 5s)
1.0 (Typical)
g
W
W/°C
V
mJ
A
mJ
V/ns
°C
A
Units
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Lead Temperature
Weight
I
D2
@ V
GS
= 12V, T
C
= 100°C Continuous Drain Current
For Footnotes, refer to the page 2.
1
International Rectifier HiRel Products, Inc.
2018-10-22
IRHNJ67230
JANSR2N7591U3
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Symbol
BV
DSS
BV
DSS
/T
J
R
DS(on)
V
GS(th)
V
GS(th)
/T
J
gfs
I
DSS
I
GSS
Q
G
Q
GS
Q
GD
t
d(on)
t
r
t
d(off)
t
f
Ls +L
D
C
iss
C
oss
C
rss
R
G
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-
Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Forward Transconductance
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Min. Typ. Max. Units
200
–––
–––
–––
0.22
–––
–––
–––
0.13
V
V/°C
Test Conditions
V
GS
= 0V, I
D
= 1.0mA
Reference to 25°C, I
D
= 1.0mA
V
GS
= 12V, I
D2
= 10A
2.0
–––
4.0
V
V
DS
= V
GS
, I
D
= 1.0mA
––– -10.25 ––– mV/°C
V
DS
= 15V, I
D2
= 10A
10
––– –––
S
V
DS
= 160V, V
GS
= 0V
––– –––
10
µA
V
DS
= 160V,V
GS
= 0V,T
J
=125°C
––– –––
25
V
GS
= 20V
––– ––– 100
nA
V
GS
= -20V
––– ––– -100
I
D1
= 16A
––– –––
50
nC
V
DS
= 100V
––– –––
15
V
GS
= 12V
––– –––
20
V
DD
= 100V
––– –––
25
I
D1
= 16A
––– –––
30
ns
––– –––
60
R
G
= 7.5
V
GS
= 12V
––– –––
30
–––
–––
–––
–––
–––
4.0
1450
210
3.8
0.9
–––
–––
–––
–––
–––
nH
Measured from center of Drain
pad to center of Source pad
V
GS
= 0V
pF
V
DS
= 25V
ƒ = 1.0MHz
ƒ = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
16
64
1.2
350
3.5
A
V
ns
µC
Test Conditions
T
J
=25°C, I
S
= 16A, V
GS
=0V
T
J
=25°C, I
F
= 16A,V
DD
≤
25V
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Thermal Resistance
Symbol
R
JC
Junction-to-Case
Parameter
Min.
–––
Typ.
–––
Max.
1.67
Units
°C/W
Footnotes:
Repetitive Rating; Pulse width limited by maximum junction temperature.
DD
= 25V, starting T
J
= 25°C, L = 0.47mH, Peak I
L
= 16A, V
GS
= 12V
V
I
SD
16A, di/dt
570A/µs, V
DD
200V, T
J
150°C
Pulse width
300 µs; Duty Cycle
2%
Total Dose Irradiation with V
GS
Bias. 12 volt V
GS
applied and V
DS
= 0 during irradiation per MIL-STD-750, Method 1019, condition A.
Total Dose Irradiation with V
DS
Bias. 160 volt V
DS
applied and V
GS
= 0 during irradiation per MlL-STD-750, Method 1019, condition A.
2
International Rectifier HiRel Products, Inc.
2018-10-22
IRHNJ67230
JANSR2N7591U3
Radiation Characteristics
Pre-Irradiation
IR HiRel radiation hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance
program at IR Hirel is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose
(per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using
the same drive circuitry and test conditions in order to provide a direct comparison.
Table1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Symbol
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Parameter
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (SMD-0.5)
Diode Forward Voltage
Up to 300 kRads (Si)
1
Min.
200
2.0
–––
–––
–––
–––
–––
–––
Max.
–––
4.0
100
-100
10
0.134
0.130
1.2
V
V
nA
nA
µA
V
V
GS
= 0V, I
D
= 1.0mA
V
DS
= V
GS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20V
V
DS
= 160V, V
GS
= 0V
V
GS
= 12V, I
D2
= 10A
V
GS
= 12V, I
D2
= 10A
V
GS
= 0V, I
S
= 16A
Units
Test Conditions
1. Part numbers IRHNJ67230 (JANSR2N7591U3) and IRHNJ63230 (JANSF2N7591U3)
IR HiRel radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects
(SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
LET
(MeV/(mg/cm
2
))
42 ± 5%
61 ± 5%
90 ± 5%
Energy
(MeV)
2450 ± 5%
825 ± 5%
1470 ± 5%
Range
(µm)
205 ± 5%
66 ± 7.5%
80 ± 5%
@ VGS = 0V
200
200
170
VDS (V)
@ VGS = -5V @ VGS = -10V @ VGS = -15V
200
200
170
200
200
–––
190
190
–––
250
Bias VDS (V)
200
150
100
50
0
0
-5
-10
-15
Bias VGS (V)
Fig a.
Typical Single Event Effect, Safe Operating Area
For Footnotes, refer to the page 2.
3
International Rectifier HiRel Products, Inc.
2018-10-22
LET=42 ± 5%
LET=61 ± 5%
LET=90 ± 5%
IRHNJ67230
JANSR2N7591U3
Pre-Irradiation
100
VGS
TOP
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
100
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
ID, Drain-to-Source Current (A)
10
ID, Drain-to-Source Current (A)
10
5.0V
1
5.0V
60s PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
1
60s PULSE WIDTH
Tj = 150°C
0.1
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
100
T J = 25°C
10
RDS(on) , Drain-to-Source On Resistance
(Normalized)
3.0
Fig 2.
Typical Output Characteristics
ID = 16A
2.5
T J = 150°C
ID, Drain-to-Source Current (A)
2.0
1
1.5
1.0
0.1
VDS = 50V
6s PULSE WIDTH
5
6
7
8
9
10
11
12
13
0.5
VGS = 12V
0.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.01
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
RDS(on), Drain-to -Source On Resistance (
)
RDS(on) , Drain-to -Source On Resistance (
)
Fig 4.
Normalized On-Resistance Vs.
Temperature
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
10
20
30
40
50
60
70
ID, Drain Current (A)
VGS = 12V
T J = 25°C
T J = 150°C
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
4
8
12
16
20
24
T J = 25°C
T J = 150°C
ID = 16A
VGS, Gate -to -Source Voltage (V)
Fig 5.
Typical On-Resistance Vs Gate Voltage
4
Fig 6.
Typical On-Resistance Vs Drain Current
2018-10-22
International Rectifier HiRel Products, Inc.
IRHNJ67230
JANSR2N7591U3
Pre-Irradiation
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
250
6.0
ID = 1.0mA
VGS(th) Gate threshold Voltage (V)
240
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
230
220
210
200
ID = 50µA
ID = 250µA
ID = 1.0mA
ID = 150mA
-60 -40 -20
0
20
40
60
80 100 120 140 160
190
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Temperature ( °C )
T J , Temperature ( °C )
Fig 7.
Typical Drain-to-Source
Breakdown Voltage Vs Temperature
2800
2400
2000
1600
1200
800
400
0
1
10
100
VGS = 0V,
f = 1 MHz
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
Coss = Cds + Cgd
Fig 8.
Typical Threshold Voltage Vs
Temperature
20
ID = 16A
VGS, Gate-to-Source Voltage (V)
16
VDS = 160V
VDS = 100V
VDS = 40V
C, Capacitance (pF)
Ciss
12
C oss
8
4
FOR TEST CIRCUIT
17
SEE FIGURE 13
0
0
10
20
30
Crss
40
50
VDS, Drain-to-Source Voltage (V)
QG, Total Gate Charge (nC)
Fig 9.
Typical Capacitance Vs.
Drain-to-Source Voltage
100
16
Fig 10.
Typical Gate Charge Vs.
Gate-to-Source Voltage
ISD, Reverse Drain Current (A)
12
T J = 150°C
10
T J = 25°C
ID, Drain Current (A)
8
4
VGS = 0V
1.0
0.4
0.6
0.8
1.0
1.2
VSD , Source-to-Drain Voltage (V)
0
25
50
75
100
125
150
T C , Case Temperature (°C)
Fig 11.
Typical Source-Drain Diode Forward Voltage
5
Fig 12.
Maximum Drain Current Vs.Case Temperature
2018-10-22
International Rectifier HiRel Products, Inc.
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