PD-96923C
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-0.5)
Product Summary
Part Number Radiation Level
IRHNJ67230 100K Rads (Si)
IRHNJ63230 300K Rads (Si)
R
DS(on)
0.13Ω
0.13Ω
I
D
16A
16A
IRHNJ67230
JANSR2N7591U3
200V, N-CHANNEL
REF: MIL-PRF-19500/746
TECHNOLOGY
QPL Part Number
JANSR2N7591U3
JANSF2N7591U3
International Rectifier’s R6
TM
technology provides
superior power MOSFETs for space applications.
These devices have improved immunity to Single
Event Effect (SEE) and have been characterized for
useful performance with Linear Energy Transfer
(LET) up to 90MeV/(mg/cm
2
). Their combination of
very low
RDS(on)
and faster switching times reduces
power loss and increases power density in today’s
high speed switching applications such as DC-DC
converters and motor controllers. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, ease of paralleling
and temperature stability of electrical parameters.
SMD-0.5
Features:
n
n
n
n
n
n
n
n
n
n
Low R
DS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current
À
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Á
Avalanche Current
À
Repetitive Avalanche Energy
À
Peak Diode Recovery dv/dt
Â
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
For footnotes refer to the last page
19
12
76
75
0.6
±20
60
19
7.5
8.6
-55 to 150
300 (for 5s)
1.0 (Typical)
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
g
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1
11/22/10
IRHNJ67230, JANSR2N7591U3
Pre-Irradiation
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BV
DSS /∆TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
∆V
GS(th)/∆TJ Gate Threshold Voltage Coefficient
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
200
—
—
2.0
—
10
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ Max Units
—
0.22
—
—
—
0.13
V
V/°C
Ω
V
mV/°C
S
µA
nA
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
VGS = 12V, ID = 10A
Ã
VDS = VGS, ID = 1.0mA
VDS = 15V, IDS = 10A
Ã
VDS= 160V ,VGS=0V
VDS = 160V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS = 12V, ID = 16A
VDS = 100V
VDD = 100V, ID = 16A,
VGS = 12V, RG = 7.5Ω
—
4.0
-10.25 —
—
—
—
10
—
25
—
—
—
—
—
—
—
—
—
4.0
1450
210
3.8
0.9
100
-100
42
15
15
18
32
41
10
—
—
—
—
IGSS
IGSS
Qg
Q gs
Q gd
td
(on)
tr
td
(off)
tf
LS + LD
Ciss
Coss
C rss
Rg
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
nC
ns
nH
pF
Ω
Measured from the center of
drain pad to center of source pad
VGS = 0V, VDS = 25V
f = 1.0MHz
f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
IS
ISM
VSD
trr
Q RR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
16
64
1.2
346
3.5
Test Conditions
A
V
ns
µC
T
j
= 25°C, IS = 16A, VGS = 0V
Ã
Tj = 25°C, IF = 16A, di/dt
≤
100A/µs
VDD
≤
25V
Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance
Parameter
RthJC
Junction-to-Case
Min Typ Max
—
—
1.67
Units
°C/W
Test Conditions
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHNJ67230, JANSR2N7591U3
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
ÄÅ
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source On-State
Resistance (SMD-0.5)
Diode Forward Voltage
Up to 300K Rads (Si)
1
Min
200
2.0
—
—
—
—
—
—
Max
Units
V
nA
µA
Ω
Ω
V
Test Conditions
V
GS
= 0V, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20V
V
DS
= 160V, V
GS
= 0V
V
GS
= 12V, I
D
= 10A
V
GS
= 12V, I
D
= 10A
V
GS
= 0V, I
D
= 16A
—
4.0
100
-100
10
0.134
0.130
1.2
1. Part numbers IRHNJ67230 (JANSR2N7591U3) and IRHNJ63230 (JANSF2N7591U3)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
LET
(MeV/(mg/cm ))
42 ± 5%
61 ± 5%
90 ± 5%
2
Energy
(MeV)
2450 ± 5%
825 ± 5%
1470 ± 5%
Range
(µm)
205 ± 5%
66 ± 7.5%
80 ± 5%
@VGS=
@VGS=
VDS (V)
@VGS=
@VGS=
0V
200
200
170
-5V
200
200
170
-10V
200
200
-
-15V
190
190
-
250
Bias VDS (V)
200
150
100
50
0
0
-5
-10
-15
Bias VGS (V)
LET=42 ± 5%
LET=61 ± 5%
LET=90 ± 5%
Fig a.
Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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IRHNJ67230, JANSR2N7591U3
Pre-Irradiation
100
VGS
TOP
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
100
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
10
10
5.0V
1
5.0V
60µs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
1
60µs PULSE WIDTH
Tj = 150°C
0.1
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
3.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
T J = 150°C
ID, Drain-to-Source Current (A)
ID = 16A
2.5
T J = 25°C
10
2.0
1
1.5
1.0
0.1
VDS = 50V
15
60µs PULSE WIDTH
5
6
7
8
9
10
11
12
13
0.5
VGS = 12V
0.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.01
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
4
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Pre-Irradiation
IRHNJ67230, JANSR2N7591U3
RDS(on), Drain-to -Source On Resistance (
Ω)
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
4
8
12
16
ID = 16A
RDS(on), Drain-to -Source On Resistance (
Ω)
0.8
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
10
20
30
40
50
60
70
ID, Drain Current (A)
VGS = 12V
T J = 25°C
T J = 150°C
T J = 150°C
T J = 25°C
20
24
VGS, Gate -to -Source Voltage (V)
Fig 5.
Typical On-Resistance Vs
Gate Voltage
Fig 6.
Typical On-Resistance Vs
Drain Current
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
250
6.0
240
VGS(th) Gate threshold Voltage (V)
ID = 1.0mA
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
230
220
210
200
ID = 50µA
ID = 250µA
ID = 1.0mA
ID = 150mA
-60 -40 -20
0
20
40
60
80 100 120 140 160
190
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Temperature ( °C )
T J , Temperature ( °C )
Fig 7.
Typical Drain-to-Source
Breakdown Voltage Vs Temperature
Fig 8.
Typical Threshold Voltage Vs
Temperature
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