TN0604
N-Channel Enhancement-Mode
Vertical DMOS FET
Features
►
►
►
►
►
►
►
►
Low threshold — 1.6V max.
High input impedance
Low input capacitance — 140pF typical
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Complementary N- and P-channel devices
General Description
This low threshold, enhancement-mode (normally-off)
transistor utilizes a vertical DMOS structure and Supertex’s
well-proven, silicon-gate manufacturing process. This
combination produces a device with the power handling
capabilities of bipolar transistors and the high input
impedance and positive temperature coefficient inherent
in MOS devices. Characteristic of all MOS structures, this
device is free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
The Quad-Array package (20-Lead SOW (WG)) uses
four independent DMOS transistors which provide four
independent channels.
Applications
►
►
►
►
►
►
►
Logic level interfaces – ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
Ordering Information
BV
DSS
/BV
DGS
(V)
R
DS(ON)
max
(Ω)
I
D(ON)
min
(A)
V
GS(th)
max
(V)
Package Options
TO-92
TN0604N3-G
-
20-Lead SOW
-
TN0604WG-G
40
40
0.75
1.0
4.0
4.0
1.6
1.6
-G indicates package is RoHS compliant (‘Green’)
Absolute Maximum Ratings
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
Soldering temperature*
Value
BV
DSS
BV
DGS
±20V
-55
O
C to +150
O
C
300
O
C
Pin Configurations
SOURCE
DRAIN
GATE
DRAIN
1
DRAIN
1
DRAIN
1
GATE
1
SOURCE
1
SOURCE
2
GATE
2
DRAIN
2
DRAIN
2
DRAIN
2
DRAIN
4
DRAIN
4
DRAIN
4
GATE
4
SOURCE
4
SOURCE
3
GATE
3
DRAIN
3
DRAIN
3
DRAIN
3
TO-92 (N3)
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
* Distance of 1.6mm from case for 10 seconds.
20-Lead SOW (WG)
Product Marking
Top Marking
YYWW
T N 0604WG
LLLLLLLLLL
Product Marking
TN
0604
YYWW
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
TO-92 (N3)
Bottom Marking
CCCCCCCCCCC
AAA
YY = Year Sealed
WW = Week Sealed
L = Lot Number
C = Country of Origin*
A = Assembler ID*
= “Green” Packaging
*May be part of top marking
20-Lead SOW (WG)
TN0604
Thermal Characteristics
Package
TO-92 (N3)
20-Lead SOW (WG)
(continuous)
(A)
I
D
(1)
(pulsed)
(A)
I
D
Power Dissipation
@T
A
= 25
O
C
(W)
θ
jc
( C/W)
O
θ
ja
( C/W)
O
I
DR(1)
(A)
I
DRM
(A)
0.7
1.0
4.6
4.0
0.74
1.5
125
-
170
84
0.7
1.0
4.6
4.0
Notes:
(1) I
D
(continuous) is limited by max rated T
j
.
Electrical Characteristics
(@25 C unless otherwise specified)
O
Sym
BV
DSS
V
GS(th)
ΔV
GS(th)
I
GSS
I
DSS
Parameter
Drain-to-source breakdown voltage
Gate threshold voltage
Change in V
GS(th)
with temperature
Gate body leakage
Zero gate voltage drain current
Min
40
0.6
-
-
-
-
1.5
4.0
TO-92/ 20-Lead SOW
-
-
-
-
0.5
-
-
-
-
-
-
-
-
-
TO-92
20-Lead SOW
Typ
-
-
-3.8
-
-
-
2.1
7.0
1.0
0.6
-
0.5
0.8
140
75
25
-
-
-
-
1.2
300
Max
-
1.6
-4.5
100
10
1.0
-
-
1.6
0.75
1.0
0.75
-
190
110
50
10
6.0
25
20
1.8
-
Units
V
V
nA
µA
mA
A
Conditions
V
GS
= 0V, I
D
= 2.0mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= ± 20V, V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
GS
= 0V, V
DS
= 0.8 Max Rat-
ing, T
A
= 125°C
V
GS
= 5.0V, V
DS
= 20V
V
GS
= 10V, V
DS
= 20V
V
GS
= 5.0V, I
D
= 0.75A
mV/
O
C V
GS
= V
DS
, I
D
= 2.5mA
I
D(ON)
ON-state drain current
Static drain-to-source
ON-state resistance
R
DS(ON)
ΔR
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Ω
%/
O
C
V
GS
= 10V, I
D
= 1.5A
V
GS
= 10V, I
D
= 1.5A
V
GS
= 0V,
V
DS
= 20V,
f = 1.0MHz
V
DD
= 20V,
I
D
= 0.5A,
R
GEN
= 25Ω
Change in R
DS(ON)
with temperature
Forward transductance
Input capacitance
Common source output capacitance
Reverse transfer capacitance
Turn-ON delay time
Rise time
Turn-OFF delay time
Fall time
Diode forward voltage drop
Reverse recovery time
mmho V
DS
= 20V, I
D
= 1.5A
pF
ns
V
ns
V
GS
= 0V, I
SD
= 1.5A
V
GS
= 0V, I
SD
= 1.0A
Notes:
(1) All D.C. parameters 100% tested at 25
O
C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
(2) All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
10V
V
DD
R
L
OUTPUT
90%
INPUT
0V
10%
t
(ON)
PULSE
GENERATOR
t
(OFF)
t
r
t
d(OFF)
t
F
R
GEN
t
d(ON)
V
DD
10%
10%
INPUT
D.U.T.
OUTPUT
0V
90%
90%
2
TN0604
Typical Performance Curves
Output Characteristics
10
10
Saturation Characteristics
8
V
GS
=
10V
8
V
GS
=
I
D
(amperes)
I
D
(amperes)
6
9V
8V
6
10V
9V
8V
4
7V
6V
4
7V
6V
2
5V
4V
2
5V
4V
3V
0
0
10
20
30
40
50
3V
0
0
2
4
6
8
10
V
DS
(volts)
Transconductance vs. Drain Current
2.0
2.0
V
DS
(volts)
Power Dissipation vs. Case Temperature
V
DS
= 25V
DS
G
FS
(siemens)
P
D
(watts)
TA = -55°C
1.0
TA = 25°C
T
A
= 125°C
TO-92
1.0
0
0
1
2
3
4
5
6
7
0
0
25
50
75
100
125
150
I
D
(amperes)
Maximum Rated Safe Operating Area
10
1.0
T
C
(
°
C)
Thermal Response Characteristics
Thermal Resistance (normalized)
TO-92 (pulsed)
0.8
I
D
(amperes)
1.0
0.6
TO-92 (DC)
0.1
0.4
0.2
TO-92
T
C
= 25°C
P
D
= 1W
T C = 25°C
0.01
0.1
1
10
100
0
0.001
0.01
0.1
1
10
V
DS
(volts)
t
p
(seconds)
3
TN0604
Typical Performance Curves
(cont.)
BV
DSS
Variation with Temperature
2.0
1.1
On-Resistance vs. Drain Current
V
GS
= 5V
BV
DSS
(normalized)
R
DS(ON)
(ohms)
V
GS
= 10V
1.0
1.0
0.9
0
-50
0
50
100
150
0
5.0
10.0
T
j
(°C)
Transfer Characteristics
10
I
D
(amperes)
V
(th)
and R
DS
Variation with Temperature
1.4
1.4
V
DS
= 25V
8
V
GS(th)
(normalized)
I
D
(amperes)
6
=
-
55
°
C
=
1.2
V
(th)
@ 1mA
1.2
°
C
25
T
A
4
T
A
1.0
R
DS
@ 10V, 1.5A
1.0
=
5
12
°
C
0.8
0.8
T
A
2
0.6
0
0
2
4
6
8
10
-50
0
50
100
150
0.6
V
GS
(volts)
Capacitance vs. Drain-to-Source Voltage
200
10
T
j
(°C)
Gate Drive Dynamic Characteristics
f = 1MHz
150
8
C
ISS
V
DS
= 10V
C (picofarads)
V
GS
(volts)
170 pF
6
170 pF
100
C
OSS
50
4
V
DS
= 40V
C
RSS
2
0
0
10
20
30
40
0
0
1.0
2.0
3.0
4.0
5.0
V
DS
(volts)
Q
G
(nanocoulombs)
4
R
DS(ON)
(normalized)
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
