TN0606
TN0610
Low Threshold
N-Channel Enhancement-Mode
Vertical DMOS FETs
Ordering Information
BV
DSS
/ R
DS(ON)
BV
DGS
(max)
60V
100V
†
I
D(ON)
(min)
3.0A
3.0A
V
GS(th)
(max)
2.0V
2.0V
Order Number / Package
TO-92
TN0606N3
TN0610N3
TO-220
TN0606N5
—
1.5Ω
1.5Ω
MIL visual screening available
7
Low Threshold DMOS Technology
These low threshold enhancement-mode (normally-off) transis-
tors utilize a vertical DMOS structure and Supertex's well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Features
s
Low threshold — 2.0V max.
s
High input impedance
s
Low input capacitance — 100pF typical
s
Fast switching speeds
s
Low on resistance
s
Free from secondary breakdown
s
Low input and output leakage
s
Complementary N- and P-channel devices
Applications
s
Logic level interfaces – ideal for TTL and CMOS
s
Solid state relays
s
Battery operated systems
s
Photo voltaic drives
s
Analog switches
s
General purpose line drivers
s
Telecom switches
Package Options
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
*
Distance of 1.6 mm from case for 10 seconds.
7-51
BV
DSS
BV
DGS
±
20V
-55°C to +150°C
300°C
G
D
S
SGD
TO-220
TAB: DRAIN
TO-92
Note:
1. See Package Outline section for dimensions
TN0606/TN0610
Thermal Characteristics
Package
TO-92
TO-220
I
D
(continuous)*
0.8A
3.0A
I
D
(pulsed)
3.2A
4.1A
Power Dissipation
@ T
C
= 25
°
C
1W
45W
θ
jc
°
C/W
125
2.7
θ
ja
°
C/W
170
70
I
DR
*
0.8A
3.0A
I
DRM
3.2A
4.1A
*
I
D
(continuous) is limited by max rated T
j
.
Electrical Characteristics
(@ 25°C unless otherwise specified)
Symbol
BV
DSS
V
GS(th)
∆V
GS(th)
I
GSS
I
DSS
Parameter
Drain-to-Source
Breakdown Voltage
Gate Threshold Voltage
Change in V
GS(th)
with Temperature
Gate Body Leakage
Zero Gate Voltage Drain Current
TN0610
TN0606
Min
100
60
0.6
2.0
-4.5
100
10
1.0
I
D(ON)
ON-State Drain Current
1.2
3.0
2.0
6.7
15
R
DS(ON)
∆R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Static Drain-to-Source
ON-State Resistance
Change in R
DS(ON)
with Temperature
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage Drop
Reverse Recovery Time
0.8
300
0.4
0.5
100
50
10
150
85
35
6
14
16
16
1.8
V
ns
V
GS
= 0V, I
SD
= 1.5A
V
GS
= 0V, I
SD
= 1.5A
ns
V
DD
= 25V
I
D
= 1.5A
R
GEN
= 25Ω
1.5
1.0
2.0
1.5
0.75
%/°C
Ω
V
mV/°C
nA
µA
mA
A
V
GS
= V
DS
, I
D
= 1mA
V
GS
= V
DS
, I
D
= 1mA
V
GS
=
±20V,
V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125°C (note 2)
V
GS
= 5V, V
DS
= 25V
V
GS
= 10V, V
DS
= 25V
V
GS
= 3V, I
D
= 0.25A
V
GS
= 5V, I
D
= 0.75A
V
GS
= 10V, I
D
= 0.75A
V
GS
= 10V, I
D
= 0.75A
V
DS
= 25V, I
D
= 1.0A
V
GS
= 0V, V
DS
= 25V
f = 1 MHz
Typ
Max
Unit
V
Conditions
V
GS
= 0V, I
D
= 1mA
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
10V
90%
INPUT
0V
PULSE
GENERATOR
R
gen
10%
t
(ON)
t
(OFF)
t
r
t
d(OFF)
t
F
t
d(ON)
V
DD
10%
10%
INPUT
OUTPUT
0V
90%
90%
7-52
Ω
pF
V
DD
R
L
OUTPUT
D.U.T.
TN0606/TN0610
Typical Performance Curves
Output Characteristics
10
10
Saturation Characteristics
8
V
GS
=
10V
9V
8V
4
7V
6V
2
5V
3V
0
0
10
20
30
40
50
8
I
D
(amperes)
I
D
(amperes)
6
6
V
GS
=
10V
9V
8V
4
7V
6V
2
5V
4V
3V
0
1
2
4
6
8
10
V
DS
(volts)
Transconductance vs. Drain Current
1.0
V
DS
= 25V
0.8
40
50
TO-220
V
DS
(volts)
Power Dissipation vs. Case Temperature
7
G
FS
(siemens)
T
A
= -55°C
T
A
= 25°C
0.4
T
A
= 150°C
0.2
P
D
(watts)
0.6
30
20
10
TO-92
0
1
2
4
6
8
10
0
0
25
50
75
100
125
150
I
D
(amperes)
Maximum Rated Safe Operating Area
10
1.0
T
C
(
°
C)
Thermal Response Characteristics
Thermal Resistance (normalized)
0.8
TO-220
P
D
= 45W
T
C
= 25°C
TO-220 (DC)
I
D
(amperes)
1.0
0.6
0.4
0.1
TO-92 (DC)
T
C
= 25°C
0.2
TO-92
P
D
= 1W
T
C
= 25°C
0.01
0.1
1
10
0.01
1
10
100
1000
0
0.001
V
DS
(volts)
t
p
(seconds)
7-53
TN0606/TN0610
Typical Performance Curves
BV
DSS
Variation with Temperature
1.1
5
On-Resistance vs. Drain Current
4
V
GS
= 5V
BV
DSS
(normalized)
R
DS(ON)
(ohms)
3
1.0
V
GS
= 10V
2
1
0.9
-50
0
50
100
150
0
0
2
4
6
8
10
T
j
(
°
C)
Transfer Characteristics
10
I
D
(amperes)
V
(th)
and R
DS
Variation with Temperature
2.0
1.4
1.6
V
DS
= 25V
8
T
A
= -55
°
C
I
D
(amperes)
25
°
C
6
1.2
1.2
1.0
R
DS
@ 10V, 0.75A
0.8
4
0.8
0.4
0.6
2
150
°
C
0
0
2
4
6
8
10
-50
0
50
100
0
150
V
GS
(volts)
Capacitance vs. Drain-to-Source Voltage
200
10
T
j
(
°
C)
Gate Drive Dynamic Characteristics
f = 1MHz
8
150
V
DS
= 10V
C (picofarads)
V
GS
(volts)
C
ISS
100
6
V
DS
= 40V
172 pF
4
50
C
OSS
2
C
RSS
0
0
10
20
30
40
0
0
0.5
95 pF
1.0
1.5
2.0
2.5
V
DS
(volts)
Q
G
(nanocoulombs)
7-54
R
DS(ON)
(normalized)
V
GS(th)
(normalized)
V
(th)
@ 1mA
嵌入式系统
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