S E M I C O N D U C T O R
HA-2520/883
HA-2522/883
Uncompensated, High Slew Rate
Operational Amplifiers
Description
Description The HA-2520/883 and HA-2522/883 are mono-
lithic operational amplifiers which deliver an unsurpassed
combination of specifications for slew rate, bandwidth and
settling time. These dielectrically isolated amplifiers are
designed for closed loop gains of 3 or greater without exter-
nal compensation. In addition, these high performance com-
ponents also provide low offset current and high input
impedance.
The 100V/µs (min) slew rate (80V/µs for HA-2522/883) and
fast settling time of these amplifiers make them ideal com-
ponents for pulse amplification and data acquisition designs.
To insure compliance with slew rate and transient response
specifications, all devices are 100% tested for AC perfor-
mance characteristics over full temperature. These devices
are valuable components for RF and video circuitry requiring
wideband operation. For accurate signal conditioning
designs, the HA-2520/883’s superior dynamic specifications
are complemented by 25nA (max) offset current (50nA for
HA-2522/883) and offset voltage adjust capability.
July 1994
Features
• This Circuit is Processed in Accordance to MIL-STD-
883 and is Fully Conformant Under the Provisions of
Paragraph 1.2.1.
• High Slew Rate (HA-2520/883) . . . . . . . . 100V/µs (Min)
120V/µs (Typ)
• Wide Power Bandwidth (HA-2520/883) . . 1.5MHz (Min)
• Wide Gain Bandwidth (HA-2520/883) . . . . 10MHz (Min)
20MHz (Typ)
• High Input Impedance (HA-2520/883). . . . . 50MΩ (Min)
100MΩ (Typ)
• Low Offset Current (HA-2520/883) . . . . . . . . 25nA (Min)
10nA (Typ)
• Fast Settling (0.1% of 10V Step) . . . . . . . . . 200ns (Typ)
• Low Quiescent Supply Current . . . . . . . . . . 6mA (Max)
Applications
• Data Acquisition Systems
• RF Amplifiers
• Video Amplifiers
• Signal Generators
• Pulse Amplification
Ordering Information
PART
NUMBER
HA2-2520/883
HA2-2522/883
HA4-2522/883
HA7-2520/883
HA7-2522/883
TEMPERATURE
RANGE
-55
o
C to +125
o
C
-55
o
C to +125
o
C
-55
o
C to +125
o
C
-55
o
C to +125
o
C
-55
o
C to +125
o
C
PACKAGE
8 Pin Can
8 Pin Can
20 Lead Ceramic LCC
8 Lead CerDIP
8 Lead CerDIP
Pinouts
HA-2520/883, HA-2522/883
(CERDIP)
TOP VIEW
HA-2522/883
(CLCC)
TOP VIEW
BAL
COMP
NC
NC
NC
HA-2520/883, HA-2522/883
(METAL CAN)
TOP VIEW
COMP
8
BAL
-IN
+IN
V-
1
2
3
4
-
+
8
7
6
5
COMP
V+
OUT
BAL
NC
-IN
NC
+IN
NC
4
5
6
3
2
1
20 19
18 NC
BAL
17 V+
16 NC
1
-
+
3
4
V-
7 V+
-
+
-IN
2
6 OUT
7
8
9
NC
10 11 12 13
V-
NC
BAL
NC
15 OUT
14 NC
+IN
5
BAL
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper I.C. Handling Procedures.
Copyright
©
Harris Corporation 1994
Spec Number
3-150
511004-883
File Number
3735
Specifications HA-2520/883, HA-2522/883
Absolute Maximum Ratings
Voltage Between V+ and V- Terminals . . . . . . . . . . . . . . . . . . . . 40V
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V
Voltage at Either Input Terminal . . . . . . . . . . . . . . . . . . . . . . V+ to V-
Peak Output Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
Storage Temperature Range . . . . . . . . . . . . . . . . . -65
o
C to +150
o
C
ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <2000V
Lead Temperature (Soldering 10s) . . . . . . . . . . . . . . . . . . . . +300
o
C
Thermal Information
Thermal Resistance
θ
JA
θ
JC
o
C/W
CerDIP Package . . . . . . . . . . . . . . . . . . . 115
28
o
C/W
Ceramic LCC Package . . . . . . . . . . . . . .
75
o
C/W
23
o
C/W
o
C/W
Metal Can Package . . . . . . . . . . . . . . . . . 160
75
o
C/W
Package Power Dissipation Limit at +75
o
C for T
J
≤
+175
o
C
CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 870mW
Ceramic LCC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.33W
Metal Can Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW
Package Power Dissipation Derating Factor Above +75
o
C
CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.7mW/
o
C
Ceramic LCC Package . . . . . . . . . . . . . . . . . . . . . . . . 13.3mW/
o
C
Metal Can Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.3mW/
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Operating Temperature Range . . . . . . . . . . . . . . . . -55
o
C to +125
o
C
Operating Supply Voltage
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±15V
V
INCM
≤
1/2 (V+ - V-)
R
L
≥
2kΩ
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Tested at: V
SUPPLY
=
±15V,
R
SOURCE
= 100Ω, R
LOAD
= 500kΩ, V
OUT
= 0V, Unless Otherwise Specified.
GROUP A
SUBGROUPS
1
2, 3
+I
B
V
CM
= 0V,
+R
S
= 100kΩ,
-R
S
= 100Ω
V
CM
= 0V,
+R
S
= 100Ω,
-R
S
= 100kΩ
V
CM
= 0V,
+R
S
= 100kΩ,
-R
S
= 100kΩ
V+ = 5V, V- = -25V
1
2, 3
1
2, 3
1
2, 3
1
2, 3
-CMR
V+ = 25V, V- = -5V
1
2, 3
Large Signal
Voltage Gain
+A
VOL
V
OUT
= 0V and +10V,
R
L
= 2kΩ
V
OUT
= 0V and -10V,
R
L
= 2kΩ
∆V
CM
= +10V,
V+ = +5V, V- = -25V,
V
OUT
= -10V
∆V
CM
= -10V,
V+ = +25V, V- = -5V,
V
OUT
= +10V
R
L
= 2kΩ
4
5, 6
4
5, 6
1
2, 3
1
2, 3
4
5, 6
-V
OUT
R
L
= 2kΩ
4
5, 6
HA-2520/883
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
MIN
-8
-10
-200
-400
-200
-400
-25
-50
+10
+10
-
-
10
7.5
10
7.5
80
80
80
80
10
10
-
-
MAX
8
10
200
400
200
400
25
50
-
-
-10
-10
-
-
-
-
-
-
-
-
-
-
-10
-10
HA-2522/883
MIN
-10
-14
-250
-500
-250
-500
-50
-100
+10
+10
-
-
7.5
5
7.5
5
74
74
74
74
10
10
-
-
MAX
10
14
250
500
250
500
50
100
-
-
-10
-10
-
-
-
-
-
-
-
-
-
-
-10
-10
UNITS
mV
mV
nA
nA
nA
nA
nA
nA
V
V
V
V
kV/V
kV/V
kV/V
kV/V
dB
dB
dB
dB
V
V
V
V
PARAMETERS
Input Offset
Voltage
Input Bias Current
SYMBOL
V
IO
CONDITIONS
V
CM
= 0V
-I
B
Input Offset
Current
Common Mode
Range
I
IO
+CMR
-A
VOL
Common Mode
Rejection Ratio
+CMRR
-CMRR
Output Voltage
Swing
+V
OUT
Spec Number
3-151
511004-883
Specifications HA-2520/883, HA-2522/883
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
Device Tested at: V
SUPPLY
=
±15V,
R
SOURCE
= 100Ω, R
LOAD
= 500kΩ, V
OUT
= 0V, Unless Otherwise Specified.
GROUP A
SUBGROUPS
4
5, 6
-I
OUT
V
OUT
= +10V
4
5, 6
Quiescent Power
Supply Current
+I
CC
V
OUT
= 0V, I
OUT
= 0mA
1
2, 3
-I
CC
V
OUT
= 0V, I
OUT
= 0mA
1
2, 3
Power Supply
Rejection Ratio
+PSRR
∆V
SUP
= 10V,
V+ = +20V, V- = -15V,
V+ = +10V, V- = -15V
∆V
SUP
= 10V,
V+ = +15V, V- = -20V,
V+ = +15V, V- = -10V
Note 1
1
2, 3
1
2, 3
1
2, 3
-V
IO
Adj
Note 1
1
2, 3
NOTE:
1. Offset adjustment range is [V
IO
(Measured)
±1mV]
minimum referred to output. This test is for functionality only to assure adjustment
through 0V.
HA-2520/883
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
MIN
10
7.5
-
-
-
-
-6
-6.5
80
80
80
80
V
IO
-1
V
IO
-1
V
IO
+1
V
IO
+1
MAX
-
-
-10
-7.5
6
6.5
-
-
-
-
-
-
-
-
-
-
HA-2522/883
MIN
10
7.5
-
-
-
-
-6
-7
74
74
74
74
V
IO
-1
V
IO
-1
V
IO
+1
V
IO
+1
MAX
-
-
-10
-7.5
6
7
-
-
-
-
-
-
-
-
-
-
UNITS
mA
mA
mA
mA
mA
mA
mA
mA
dB
dB
dB
dB
mV
mV
mV
mV
PARAMETERS
Output Current
SYMBOL
+I
OUT
CONDITIONS
V
OUT
= -10V
-PSRR
Offset Voltage
Adjustment
+V
IO
Adj
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Tested at: V
SUPPLY
=
±15V,
R
SOURCE
= 50Ω, R
LOAD
= 2kΩ, C
LOAD
= 50pF, A
VCL
= +3V/V, Unless Otherwise Specified.
GROUP A
SUBGROUPS
7
8A, 8B
7
8A, 8B
7
8A, 8B
7
8A, 8B
7
8A, 8B
-OS
V
OUT
= 0 to -200mV
7
8A, 8B
HA-2520/883
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
MIN
100
84
100
84
-
-
-
-
-
-
-
-
MAX
-
-
-
-
50
55
50
55
40
45
40
45
HA-2522/883
MIN
80
60
80
60
-
-
-
-
-
-
-
-
MAX
-
-
-
-
50
60
50
60
50
60
50
60
UNITS
V/µs
V/µs
V/µs
V/µs
ns
ns
ns
ns
%
%
%
%
PARAMETERS
Slew Rate
SYMBOL
+SR
CONDITIONS
V
OUT
= -5V to +5V
25%
≤
+SR
≤
75%
V
OUT
= +5V to -5V
75%
≥
-SR
≥
25%
V
OUT
= 0 to +200mV
10%
≤
T
R
≤
90%
V
OUT
= 0 to -200mV
10%
≤
T
F
≤
90%
V
OUT
= 0 to +200mV
-SR
Rise and Fall
Time
T
R
T
F
Overshoot
+OS
Spec Number
3-152
511004-883
Specifications HA-2520/883, HA-2522/883
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Characterized at: V
SUPPLY
=
±15V,
R
LOAD
= 2kΩ, C
LOAD
= 50pF, A
V
≥
3, C
COMP
= 0pF, Unless Otherwise Specified.
HA-2520/883
PARAMETERS
Differential Input
Resistance
Full Power
Bandwidth
Full Power
Bandwidth
Minimum Closed
Loop Stable Gain
Quiescent Power
Consumption
NOTES:
1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These param-
eters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization
based upon data from multiple production runs which reflect lot to lot and within lot variation.
2. Full Power Bandwidth guarantee based on Slew Rate measurement using FPBW = Slew Rate/(2πV
PEAK
).
3. Quiescent Power Consumption based upon Quiescent Supply Current test maximum. (No load on outputs.)
SYMBOL
R
IN
GBWP
CONDITIONS
V
CM
= 0V
V
O
= 200mV, f
O
= 10kHz
V
O
= 200mV, f
O
= 1MHz
FPBW
CLSG
PC
V
PEAK
= 10V
R
L
= 2kΩ, C
L
= 50pF
V
OUT
= 0V, I
OUT
= 0mA
NOTES
1
1
1
1, 2
1
1, 3
TEMPERATURE
+25
o
C
+25
o
C
+25
o
C
+25
o
C
-55
o
C to +125
o
C
-55
o
C to +125
o
C
MIN
50
10
10
1.6
+3
-
MAX
-
-
-
-
-
195
HA-2522/883
MIN
40
10
10
1.2
+3
-
MAX
-
-
-
-
-
210
UNITS
MΩ
MHz
MHz
MHz
V/V
mW
TABLE 4. ELECTRICAL TEST REQUIREMENTS
MIL-STD-883 TEST REQUIREMENTS
Interim Electrical Parameters (Pre Burn-In)
Final Electrical Test Parameters
Group A Test Requirements
Groups C and D Endpoints
NOTE:
1. PDA applies to Subgroup 1 only.
SUBGROUPS (SEE TABLES 1 AND 2)
1
1 (Note 1), 2, 3, 4, 5, 6, 7, 8A, 8B
1, 2, 3, 4, 5, 6, 7, 8A, 8B
1
Spec Number
3-153
511004-883
HA-2520/883, HA-2522/883
Die Characteristics
DIE DIMENSIONS:
67 x 57 x 19 mils
±
1 mils
1700 x 1440 x 483µm
±
25.4µm
METALLIZATION:
Type: Al, 1% Cu
Thickness: 16k
Å
±
2k
Å
GLASSIVATION:
Type: Nitride (Si3N4) over Silox (SiO2, 5% Phos.)
Silox Thickness: 12kÅ
±
2kÅ
Nitride Thickness: 3.5kÅ
±
1.5kÅ
WORST CASE CURRENT DENSITY:
0.26 x 10
5
A/cm
2
SUBSTRATE POTENTIAL (Powered Up):
Unbiased
TRANSISTOR COUNT:
HA-2520/883: 40
HA-2522/883: 40
PROCESS:
Bipolar Dielectric Isolation
Metallization Mask Layout
HA-2520/883, HA-2522/883
COMP
V+
OUT
BAL
BAL
-IN
+IN
V-
Spec Number
3-154
511004-883
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