A426316B Series
Preliminary
Features
n
Organization: 65,536 words X 16 bits
n
Part Identification:
-
A426316B
-
A426316B-L (with self-refresh mode)
n
High speed
- 30/35/40 ns
RAS
access time
- 16/18/20 ns column address access time
- 10/11/12 ns
CAS
access time
n
Low power consumption
- Operating: 75mA (-30 max)
-
Standby: 3 mA (TTL)
Separate
CAS
(
UCAS
,
LCAS
) for byte selection
Self refresh mode
256 refresh cycles, 4 ms refresh interval
Read-modify-write,
RAS
-only,
CAS
-before-
RAS
,
Hidden refresh capability
n
TTL-compatible, three-state I/O
n
JEDEC standard packages
-
400mil, 40-pin SOJ
-
400mil, 40/44 TSOP type II package
n
Single 5V power supply/built-in VBB generator
n
n
n
n
64K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE
Pin Configuration
n
SOJ
n
TSOP
Pin Descriptions
Symbol
VCC
I/O
0
I/O
1
I/O
2
I/O
3
VCC
I/O
4
I/O
5
I/O
6
I/O
7
NC
NC
WE
RAS
NC
A0
A1
A2
A3
VCC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
VSS
I/O
15
I/O
14
I/O
13
I/O
12
VSS
I/O
11
I/O
10
I/O
9
I/O
8
NC
LCAS
UCAS
OE
NC
A7
A6
A5
A4
VSS
VCC
I/O
0
I/O
1
I/O
2
I/O
3
VCC
I/O
4
I/O
5
I/O
6
I/O
7
NC
NC
WE
RAS
NC
A0
A1
A2
A3
VCC
1
2
3
4
5
6
7
8
9
10
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
32
31
30
29
28
27
26
25
24
23
VSS
I/O
15
I/O
14
I/O
13
I/O
12
VSS
I/O
11
I/O
10
I/O
9
I/O
8
NC
LCAS
UCAS
OE
NC
A7
A6
A5
A4
VSS
Description
Address Inputs
Data Input/Output
Row Address Strobe
Column Address Strobe/Upper Byte Control
Column Address Strobe/Lower Byte Control
Write Enable
Output Enable
+5V Power Supply
Ground
No Connection
A0 – A7
I/O
0
- I/O
15
RAS
PRELIMINARY
A426316BS
(November, 2000, Version 0.0)
A426316BV
UCAS
LCAS
WE
OE
VCC
VSS
NC
1
AMIC Technology, Inc.
A426316B Series
Selection Guide
Symbol
t
RAC
t
AA
t
CAC
t
OEA
t
RC
t
PC
I
CC1
I
CC6
Description
Maximum
RAS
Access Time
Maximum Column Address Access Time
Maximum
CAS
Access Time
Maximum Output Enable (
OE
) Access Time
Minimum Read or Write Cycle Time
Minimum EDO Page Mode Cycle Time
Maximum Operating Current
Maximum CMOS Standby Current
-30
30
16
10
10
65
12
95
2
-35
35
18
11
11
70
14
85
2
-40
40
20
12
12
75
15
75
2
Unit
ns
ns
ns
ns
ns
ns
mA
mA
Functional Description
The A426316B is a high performance CMOS Dynamic
Random Access Memory organized as 65,536 words X
16 bits. The A426316B is fabricated with advanced
CMOS technology and designed with innovative design
techniques resulting in high speed, extremely low power
and wide operating margins at component and system
levels.
The A426316B features a high speed page mode
operation in which high speed read, write and read-write
are performed on any of the bits defined by the column
address. The asynchronous column address uses an
extremely short row address capture time to ease the
system level timing constraints associated with
multiplexed addressing. Output is tri-stated by a column
address strobe (
UCAS
and
LCAS
) which acts as an
output enable independent of
RAS
. Very EDO
UCAS
and
LCAS
to output access time eases system design.
All inputs are TTL compatible. EDO Page Mode
operation allows random access up to 256 X 16 bits
within a page, with cycle time as short as 12/14/15 ns.
The A426316B is best suited for graphics, digital signal
processing and high performance peripherals.
The A426316B is available in JEDEC standard 40-pin
plastic SOJ package and 40/44 TSOP type II package.
PRELIMINARY
(November, 2000, Version 0.0)
2
AMIC Technology, Inc.
A426316B Series
Truth Table
Function
Standby
Read: Word
Read: Lower Byte
RAS
UCAS
H
L
H
LCAS
H
L
L
WE
OE
Address
X
Row/Col.
Row/Col.
I/Os
High-Z
Data Out
I/O
0-7
= Data Out
I/O
8-15
= High-Z
I/O
0-7
= High-Z
I/O
8-15
= Data Out
Data In
I/O
0-7
= Data In
I/O
8-15
= X
I/O
0-7
= X
I/O
8-15
= Data In
Data Out
→
Data In
Data Out
Data Out
Data In
Data In
Data In
Data In
Data Out
Data In
→
High-Z
High-Z
High-Z
High-Z
Notes
H
L
L
X
H
H
X
L
L
Read: Upper Byte
L
L
H
H
L
Row/Col.
Write: Word(Early)
Write: Lower Byte(Early)
L
L
L
H
L
L
L
L
X
X
Row/Col.
Row/Col.
Write: Upper Byte(Early)
L
L
H
L
X
Row/Col.
Read-Write
EDO-Page-Mode Read: Hi-Z
-First cycle
-Subsequent Cycles
EDO-Page-Mode Write(Early)
-First cycle
-Subsequent Cycles
EDO-Page-Mode Read-Write
-First cycle
-Subsequent Cycles
Hidden Refresh Read
Hidden Refresh Write
RAS
-Only Refresh
L
L
L
L
L
L
L
L→H→L
L→H→L
L
H→L
H→L
L
H→L
H→L
H→L
H→L
H→L
H→L
L
L
H
L
L
L
H→L
H→L
H→L
H→L
H→L
H→L
L
L
H
L
L
H→L
H
H
L
L
H→L
H→L
H
L
X
X
X
L→H
H→L
H→L
X
X
L→H
L→H
L
X
X
X
X
Row/Col.
Row/Col.
Col.
Row/Col.
Col.
Row/Col.
Col.
Row/Col.
Row/Col.
Row
X
X
1.2
2
2
1
1
1, 2
1, 2
2
1
CBR Refresh
Self Refresh (L-ver only)
Note:
3
1. Byte Write may be executed with either
UCAS
or
LCAS
active.
2. Byte Read may be executed with either
UCAS
or
LCAS
active.
3. Only one
CAS
signal (
UCAS
or
LCAS
) must be active.
PRELIMINARY
(November, 2000, Version 0.0)
4
AMIC Technology, Inc.
电源技术
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
