HN4B102J
TOSHIBA Transistor
Silicon PNP / NPN Epitaxial Type (PCT Process)
HN4B102J
MOS Gate Drive Applications
Switching Applications
•
•
•
•
+0.2
2.8 -0.3
Unit: mm
Small footprint due to a small and thin package
High DC current gain
: PNP h
FE
= 200 to 500 (I
C
=－0.2 A)
: NPN
Low collector-emitter saturation
High-speed switching
2.9±0.2
1.9±0.2
+0.2
1.6 -0.1
0.95
: NPN
: NPN
V
CE (sat)
= 0.14 V (max)
2
3
: PNP t
f
= 40 ns (typ.)
t
f
= 45 ns (typ.)
4
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation (t = 10 s)
Collector power
dissipation (DC)
Junction temperature
Storage temperature range
Single-device
operation
Single-device
operation
DC
(Note 1)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
(Note 2)
P
C
(Note 2)
T
j
T
stg
Rating
PNP
−30
−30
−7
−1.8
−8.0
−0.5
1.1
0.75
150
−55
to 150
NPN
60
30
7
2.0
8.0
0.5
V
V
V
A
A
W
W
°C
°C
Unit
+0.2
1.1 -0.1
1. Base
2. Emitter
3. Base
4. Collector
5. Collector
(Q1 PNP)
(Q1 PNP/Q2 NPN)
(Q2 NPN)
(Q2 NPN)
(Q1 PNP)
JEDEC
JEITA
TOSHIBA
Pulse (Note 1)
2-3L1A
Weight: 0.014g (typ.)
Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device.
Note 2: Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 645 mm
2
)
Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Figure 1
Circuit Configuration
(top view)
５
４
Figure 2
Marking
Part No.
(or abbreviation code)
5
0~0.1
―
―
L
2009-06-17
１
Q1
(PNP)
２
３
Q2
(NPN)
1
+0.1
0.16 -0.06
0.4±0.1
: PNP
V
CE (sat)
=－0.20 V (max)
0.95
h
FE
= 200 to 500 (I
C
= 0.2 A)
1
5
HN4B102J
Electrical Characteristics
(Ta = 25°C)
PNP
Characteristic
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
Symbol
I
CBO
I
EBO
V
(BR) CEO
h
FE
(1)
DC current gain
h
FE
(2)
h
FE
(3)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Rise time
Switching time
Storage time
Fall time
V
CE (sat)
V
BE (sat)
C
ob
t
r
t
stg
t
f
Test Condition
V
CB
= −30
V, I
E
=
0
V
EB
= −7
V, I
C
=
0
I
C
= −10
mA, I
B
=
0
V
CE
= −2
V, I
C
= −0.2
A
V
CE
= −2
V, I
C
= −0.6
A
V
CE
= −2
V, I
C
= −2.0
A
I
C
= −0.6
A, I
B
= −20
mA
I
C
= −0.6
A, I
B
= −20
mA
V
CB
= −10
V, I
E
=
0, f = 1MHz
See Figure 3 circuit diagram
V
CC
i≒−18 V, R
L
=
30
Ω
I
B1
=
I
B2
=
20 mA
Min
⎯
⎯
−30
200
125
40
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
16.5
40
280
40
Max
−100
−100
⎯
500
⎯
⎯
−0.20
−1.10
⎯
⎯
⎯
⎯
ns
V
V
pF
Unit
nA
nA
V
NPN
Characteristic
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
Symbol
I
CBO
I
EBO
V
(BR) CEO
h
FE
(1)
DC current gain
h
FE
(2)
h
FE
(3)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Rise time
Switching time
Storage time
Fall time
V
CE (sat)
V
BE (sat)
C
ob
t
r
t
stg
t
f
Test Condition
V
CB
=
60 V, I
E
=
0
V
EB
=
7 V, I
C
=
0
I
C
=
10 mA, I
B
=
0
V
CE
=
2 V, I
C
=
0.2 A
V
CE
=
2 V, I
C
=
0.6 A
V
CE
=
2 V, I
C
=
2.0 A
I
C
=
0.6 A, I
B
=
20 mA
I
C
=
0.6 A, I
B
=
20 mA
V
CB
=
10 V, I
E
=
0, f = 1MHz
See Figure 4 circuit diagram
V
CC
≒18
V, R
L
=
30
Ω
I
B1
=
I
B2
=
20 mA
Min
⎯
⎯
30
200
125
40
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
14
45
580
45
Max
100
100
⎯
500
⎯
⎯
0.14
1.10
⎯
⎯
⎯
⎯
ns
V
V
pF
Unit
nA
nA
V
Figure 3. Switching Time Test Circuit & Timing Chart
VCC
20μs
RL
IB2
IB1
IB1
Input
Duty cycle
＜1%
IB2
Figure 4. Switching Time Test Circuit & Timing Chart
VCC
20μs
RL
IB1
Output
Output
IB2
Input
Duty cycle
＜1%
IB1
IB2
2
2009-06-17
HN4B102J
PNP
I
C
– V
CE
-2
-20
-10
-8
-6
1000
h
FE
– I
C
Ta
=
100°C
(A)
-1.6
I
C
h
FE
300
−55°C
100
25°C
Collector current
-5
-4
-0.8
-3
-2
-0.4
IB
=−
1 mA
0
0
-0.4
-0.8
Common emitter
Ta
=
25°C
Single nonrepetitive pulse
-1.2
-1.6
-2
DC current gain
-1.2
30
Common emitter
VCE
= −2
V
Single nonrepetitive pulse
-0.01
-0.1
-1
-10
10
-0.001
Collector−emitter voltage
V
CE
(V)
Collector current
I
C
(A)
V
CE (sat)
– I
C
-1
V
BE (sat)
– I
C
-10
Common emitter
I
C
/I
B
=
30
Single nonrepetitive pulse
Collector−emitter saturation voltage
V
CE (sat)
(V)
Common emitter
I
C
/I
B
=
30
Single nonrepetitive pulse
-0.3
Base−emitter saturation voltage
V
BE (sat)
(V)
-3
-0.1
-1
Ta
=
-55°C
-0.03
Ta
=
100°C
−55°C
25°C
-0.3
25°C
100°C
-0.01
-0.001
-0.01
-0.1
-1
-10
-0.1
-0.001
-0.01
-0.1
-1
-10
Collector current
I
C
(A)
Collector current
I
C
(A)
I
C
– V
BE
-2
Common emitter
VCE
= −2
V
Single nonrepetitive
pulse
Safe operating area
-10
IC max (pulse) *
IC max (pulse) *
10
μs*
-1.6
(A)
(A)
100 ms*
100μs*
-1
IC max
(continuous)*
DC operation
Ta = 25°C
10 s*
-0.1
*:
Single nonrepetitive pulse
Ta
=
25°C
Note that the curves for 100 ms, 10 s and
DC operation will be different when the
devices aren’t mounted on an FR4 board
(glass-epoxy, 1.6 mm thick, Cu area: 645
mm
2
).
Single-device operation
These characteristic curves must be
derated linearly with increase in
temperature.
-0.1
-1
-10
10 ms*
I
C
-1.2
Ta
=
100°C
-0.8
−55°C
Collector current
Collector current
I
C
1 ms*
-0.4
25°C
0
0
-0.4
-0.8
-1.2
-1.6
-0.01
Base−emitter voltage
V
BE
(V)
VCEO max
-100
Collector−emitter voltage
V
CE
(V)
3
2009-06-17
HN4B102J
NPN
I
C
– V
CE
2
20
10
8
6
1.2
5
4
0.8
3
2
IB
=
1 mA
0
0
0.4
0.8
Common emitter
Ta
=
25°C
Single nonrepetitive pulse
1.2
1.6
2
1000
h
FE
– I
C
(A)
1.6
Ta
=
100°C
h
FE
300
25°C
−55°C
I
C
Collector current
DC current gain
100
0.4
30
Common emitter
VCE
=
2 V
Single nonrepetitive pulse
10
0.001
0.01
0.1
1
10
Collector−emitter voltage
V
CE
(V)
Collector current
I
C
(A)
V
CE (sat)
– I
C
1
V
BE (sat)
– I
C
10
Common emitter
I
C
/I
B
=
30
Single nonrepetitive pulse
Collector−emitter saturation voltage
V
CE (sat)
(V)
0.3
Base−emitter saturation voltage
V
BE (sat)
(V)
Common emitter
I
C
/I
B
=
30
Single nonrepetitive pulse
3
0.1
1
Ta
=
-55°C
−55°C
0.03
Ta
=
100°C
25°C
100°C
0.3
25°C
0.01
0.001
0.1
0.01
0.1
1
10
0.001
0.01
0.1
1
10
Collector current
I
C
(A)
Collector current
I
C
(A)
I
C
– V
BE
2
Common emitter
VCE
=
2 V
Single nonrepetitive pulse
10
Safe operating area
IC max (pulse) *
IC max (pulse) *
100 ms*
10μs*
(A)
1.6
(A)
I
C
Collector current
1.2
Ta
=
100°C
0.8
−55°C
I
C
1
IC max
(continuous)*
DC operation
Ta = 25°C
10 s*
100μs*
Collector current
1 ms*
0.4
25°C
0.1
0
0.4
0.8
1.2
1.6
Base−emitter voltage
V
BE
(V)
0.01
0.1
1
10
VCEO max
100
0
*:
Single nonrepetitive pulse
Ta
=
25°C
Note that the curves for 100 ms, 10 s and
DC operation will be different when the
devices aren’t mounted on an FR4 board
(glass-epoxy, 1.6 mm thick, Cu area: 645
2
mm ).
Single-device operation
These characteristic curves must be
derated linearly with increase in
temperature.
10 ms*
Collector−emitter voltage
V
CE
(V)
4
2009-06-17
HN4B102J
Common
r
th
－t
w
1000
Transient thermal resistance
r
th
(j-a) (°C/W)
100
10
Curves apply only to limited areas of thermal resistance.
Single nonepetitive pulse Ta = 25°C
Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 645 mm
2
)
Single-device operation
1
0.001
0.01
0.1
1
10
100
1000
Pulse width
t
w
(s)
5
2009-06-17
stm32/stm8
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
