MURB2060CT
Technical Data
Data Sheet N0331, Rev. A
MURB2060CT ULTRAFAST RECTIFIER
Features
Ultra-Fast Switching
High Current Capability
Low Reverse Leakage Current
High Surge Current Capability
Plastic Material has UL Flammability Classification 94V-O
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
D
2
PAK
Circuit Diagram
Applications
Switching Power Supply
Power Switching Circuits
General Purpose
Maximum Ratings:
Characteristics
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Peak One Cycle Non-Repetitive Surge
Current(Per Leg)
Symbol
V
RRM
V
RWM
V
R
I
F (AV)
I
FSM
Condition
-
50% duty cycle @T
C
=105°C,
rectangular wave form
8.3ms, Half Sine pulse
Max.
600
10(Per Leg)
20(Per Device)
110
Units
V
A
A
Electrical Characteristics:
Characteristics
Forward Voltage Drop(Per Leg)*
Reverse Current(Per Leg)*
Reverse Recovery Time(Per Leg)
* Pulse width < 300 µs, duty cycle < 2%
Symbol
V
F1
V
F2
I
R1
I
R2
t
rr
Condition
@ 10A, Pulse, T
J
= 25C
@ 10A, Pulse, T
J
= 100C
@V
R
= rated V
R,
T
J
= 25C
@V
R
= rated V
R,
T
J
= 100C
@I
F
=500mA, I
R
=1A,and I
rm
=250mA
Typ.
1.25
-
0.03
-
45
Max.
2.2
2.0
5
50
50
Units
V
V
μA
μA
ns
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MURB2060CT
Technical Data
Data Sheet N0331, Rev. A
Thermal-Mechanical Specifications:
Characteristics
Junction Temperature
Storage Temperature
Typical Thermal Resistance Junction to
Case
Approximate Weight
Case Style
Symbol
T
J
T
stg
R
JC
wt
Condition
-
-
DC operation
-
D PAK
2
Specification
-55 to +150
-55 to +150
4
1.85
Units
C
C
C/W
g
Ratings and Characteristics Curves
μ
A)
1000
Junction Capacitance. (PF)
100
10
TJ=125℃
100
TJ=25℃
Instantaneous Reverse Current. (
1
0.1
0.01
0.001
10
30
50
70
90
Percent Of Rated Peak Reverse Voltage. (%)
TJ=25℃
10
0
5
10
15
20
25
30
35
40
Reverse Voltage. (V)
Fig.1-Typical Junction Capacitance
Instantaneous Forward Current-IF(A)
Fig.2-Typical Reverse Characteristics
100
10
TJ=125℃
TJ=25℃
1
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
Forw ard Voltage Drop-VF(V)
Fig.3-Typical Forward Voltage Drop Characteristics
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MURB2060CT
Technical Data
Data Sheet N0331, Rev. A
Mechanical Dimensions D
2
PAK
Symbol
A
A1
A2
b
b1
c
c1
D
D1
E
E1
E2
e
H
L
L1
L2
L3
e
e1
e2
e3
Dimensions in millimeters
Min.
4.47
0
2.59
0.71
1.17
0.31
1.17
8.50
6.40
10.01
7.6
9.98
14.6
2.00
1.12
1.30
0
Typical
4.70
0.10
2.69
0.81
1.27
0.38
1.27
8.70
Max.
4.85
0.25
2.89
0.96
1.37
0.61
1.37
8.90
10.16
10.08
2.54
15.1
2.30
1.27
0.25BSC
-
5°
4°
4°
10.31
10.31
15.6
2.74
1.42
2.20
8°
Ordering Information
Device
MURB2060CT
Marking Diagram
Shipping
800pcs / reel
Where XXXXX is YYWWL
MUR
B
20
60
CT
SSG
YY
WW
L
= Device Type
= Package type
= Forward Current (20A)
= Reverse Voltage(600V)
= Configuration
= SSG
= Year
= Week
= Lot Number
Package
D
2
PAK
For information on tape and reel specifications, including part
orientation and tape sizes, please refer to our tape and reel
packaging specification.
Cautions：Molding
resin
Epoxy resin UL:94V-0
Carrier Tape Specification D
2
PAK
SYMBOL
A
B
C
d
E
F
P0
P
P1
W
10.70
16.03
5.11
1.45
1.65
11.40
3.90
15.90
1.90
23.90
Millimeters
Min.
Max.
10.90
16.23
5.31
1.65
1.85
11.60
4.10
16.10
2.10
24.30
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MURB2060CT
Technical Data
Data Sheet N0331, Rev. A
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales
department for the latest version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any
other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes
no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or
circuits described in the datasheets.
4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary
damage resulting from use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics
(Nanjing) Co., Ltd.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC -
Sangdest Microelectronics (Nanjing) Co., Ltd.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party.
When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations..
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