AS8S512K32
& AS8S512K32A
512K x 32 SRAM
SRAM MEMORY ARRAY
AVAILABLE AS MILITARY SPECIFICATIONS
•
•
SMD 5962-94611 & 5962-95624 (Military Pinout)
MIL-STD-883
SRAM
OPTIONS
Operating Temp. Ranges
Full Military (-55
o
C to +125
o
C)
Military (-55
o
C to +125
o
C)
Industrial (-40
o
C to +85
o
C)
Timing
12ns
15ns
17ns
20ns
Markings
-12
-15
-17
-20
Markings
Q & 883
XT
IT
Timing
25ns
35ns
45ns
55ns
Markings
-25
-35
-45
-55
FEATURES
• Operation with single 5V
• Built in decoupling caps for
supply
low noise
• Vastly improved Icc Specs
• Organized as 512Kx32 , byte
• High speed: 12, 15, 17, 20, 25,
selectable
35, 45 & 55ns
• TTL Compatible Inputs and
• Low power CMOS
Outputs
Package
Ceramic Quad Flatpack
Pin Grid Array
Low Power Data
Retention Mode
Pinout
Military
Commercial
Markings
Q, Q1, Q2, BQFP
P
L
Markings
(no indicator)
A*
*(available with Q package only)
GENERAL DESCRIPTION
The AS8S512K32 and AS8S512K32A are 16 Megabit CMOS
SRAM Modules organized as 512Kx32 bits. These devices achieve
high speed access, low power consumption and high reliability by
employing advanced CMOS memory technology.
This military temperature grade product is ideally suited for
military applications.
NC
A0
A1
A2
A3
A4
A5
CS3\
GND
CS4\
WE1\
A6
A7
A8
A9
A10
Vcc
9
8
7
6
5
4
3
2
1
68
67
66
65
64
63
62
61
68 Lead CQFP
(Q, Q1, Q2)
Military SMD
Pinout Option
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
Vcc
A11
A12
A13
A14
A15
A16
CS1\
OE\
CS2\
A17
WE2\
WE3\
WE4\
A18
NC
NC
68 Lead
CQFP
(BQFP)
Military SMD
Pinout Option
Vcc
A11
A12
A13
A14
A15
A16
CS2\
OE\
CS4\
A17
A18
NC
NC
NC
NC
NC
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
GND
I/O 8
I/O 9
I/O 10
I/O 11
I/O 12
I/O 13
I/O 14
I/O 15
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
9
8
7
6
5
4
3
2
1
68
67
66
65
64
63
62
61
NC
A0
A1
A2
A3
A4
A5
CS1\
GND
CS3\
WE\
A6
A7
A8
A9
A10
Vcc
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
I/O 16
I/O 17
I/O 18
I/O 19
I/O 20
I/O 21
I/O 22
I/O 23
GND
I/O 24
I/O 25
I/O 26
I/O 27
I/O 28
I/O 29
I/O 30
I/O 31
I/O 31
A6
A5
A4
A3
A2
A1
A0
Vcc
A13
A12
A11
A10
A9
A8
A7
I/O 0
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
GND
I/O 8
I/O 9
I/O 10
I/O 11
I/O 12
I/O 13
I/O 14
I/O 15
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
I/O 16
I/O 17
I/O 18
I/O 19
I/O 20
I/O 21
I/O 22
I/O 23
GND
I/O 24
I/O 25
I/O 26
I/O 27
I/O 28
I/O 29
I/O 30
I/O 31
I/O17
I/O18
I/O19
Vss
I/O20
I/O21
I/O22
I/O23
Vcc
I/O24
I/O25
I/O26
I/O27
Vss
I/O28
I/O29
I/O30
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
9
8
7
6
5
4
3
2
1
68
67
66
65
64
63
62
61
I/O 16
A18
A17
CS4\
CS3\
CS2\
CS1\
NC
Vcc
NC
NC
OE\
WE\
A16
A15
A14
I/O 15
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
PIN ASSIGNMENT
(Top View)
I/O 14
I/O 13
I/O 12
Vss
I/O 11
I/O 10
I/O 9
I/O 8
Vcc
I/O 7
I/O 6
I/O 5
I/O 4
Vss
I/O 3
I/O 2
I/O 1
68 Lead CQFP
Commercial
Pinout Option
(Q with
Pinout A)
66 Lead
PGA (P)
Military SMD
Pinout
AS8S512K32 & AS8S512K32A
Rev. 6.9 08/13
Micross Components reserves the right to change products or specifications without notice.
1
Austin Semiconductor, Inc.
AS8S512K32
AS8S512K32
&
& AS8S512K32A
AS8S512K32A
SRAM
SRAM
CS
CS\4
CS4\
CS
CS3\
CS\3
CS
512K x 8
M3
512K x 8
M2
512K x 8
I/O 24 - I/O 31
CS\2
CS2\
M1
M0
I/O 16 - I/O 23
CS
512K x 8
CS\1
CS1\
WE\
OE\
A0 - A18
I/O 8 - I/O 15
I/O 0 - I/O 7
MILITARY PINOUT/BLOCK DIAGRAM
MILITARY PINOUT/BLOCK DIAGRAM
COMMERCIAL PINOUT/BLOCK DIAGRAM
COMMERCIAL PINOUT/BLOCK DIAGRAM
TRUTH TABLE
MODE
Read
Write(2)
Standby
OE\
L
X
X
CE\
CS
CS
WE\
L
H
L
X
L
H
I/O
D
OUT
D
IN
High Z
POWER
ACTIVE
ACTIVE
STANDBY
AS8S512K32 & AS8S512K32A
AS8S512K32 & AS8S512K32A
Rev. 6.0 6/05
Rev. 6.9 08/13
2
2
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
Micross Components reserves the right to change products or specifications without notice.
Austin Semiconductor, Inc.
ABSOLUTE MAXIMUM RATINGS*
ABSOLUTE MAXIMUM RATINGS*
Voltage of Vcc Supply Relative to Vss.................-.5V to +7V
Voltage of Vcc Supply Relative to Vss......................-.5V to +7V
Storage Temperature.....................................-65°C to +150°C
Storage Temperature............................................-65°C to +150°C
Short Circuit Output Current(per I/O)............................20mA
Short Circuit Output Current(per I/O).................................20mA
Voltage on Any Pin Relative to Vss................-.5V to Vcc+1V
Voltage on Any Pin Relative to Vss....................-.5V to Vcc+1V
Maximum Junction Temperature**.............................+150°C
Maximum Junction Temperature**...................................+150°C
*Stresses greater than those listed under “Absolute Maximum
*Stresses greater than those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device.
Ratings” may cause permanent damage to the device.
AS8S512K32
AS8S512K32
& AS8S512K32A
& AS8S512K32A
SRAM
SRAM
This is stress rating only and functional operation on the
This is a
a
stress rating only and functional operation on the
device at these or any other conditions above those indicated
device at these or any other conditions above those indicated
in the operational sections of this specification is not implied.
in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended
Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
periods may affect reliability.
**Junction temperature depends upon package
cycle
cycle
**Junction temperature depends upon package type,
type,
time,
time, loading, ambient temperature and airflow. See the Ap-
loading, ambient temperature and airflow. See the Application
plication Information section at the end of this datasheet for
Information section at the end of this datasheet for more infor-
more information.
mation.
ELECTRICAL CHARACTERISTICS AND
RECOMMENDED DC OPERATING CONDITIONS
ELECTRICAL CHARACTERISTICS AND
RECOMMENDED DC OPERATING CONDITIONS
(-55
o
C < T
A
< 125
o
C and -40
o
C to +85
o
C; Vcc
5V +10%)
(-55
o
C < T
A
< 125
o
C and -40
o
C to +85
o
C; Vcc =
= 5V +10%)
DESCRIPTION
Input High (logic 1) Voltage
Input Low (logic 1) Voltage
Input Leakage Current
ADD,OE
Input Leakage Current
WE, CE
Output Leakage Current
I/O
Output High Voltage
Output Low Voltage
Supply Voltage
CONDITIONS
SYMBOL
V
IH
V
IL
0V<V
IN
<V
CC
Output(s) Disabled
0V<V
OUT
<V
CC
I
OH
= 4.0mA
I
OL
= 8.0mA
I
LI1
I
LI2
ILO
V
OH
V
OL
V
CC
4.5
MIN
2.2
-0.5
-10
-10
-10
2.4
0.4
5.5
MAX UNITS NOTES
V
CC
+.5
V
1
0.8
10
10
10
V
µA
µA
µA
V
V
V
1
1
1
1,2
DESCRIPTION
DESCRIPTION
CONDITIONS
CONDITIONS
MAX
MAX
SYMBOL -12 -15 -17 -20 -25 -35 -45 -55 UNITS NOTES
SYMBOL -12 -15 -17 -20 -25 -35 -45 -55 UNITS NOTES
Icc
Icc
250 200
175 150 140 130 120 110 mA
250 200 700 650 600 570 570 550 mA
3,13
3,13
CS\<VIL; VCC MAX
CS\<VIL; VCC =
=
MAX
Power Supply
Power Supply
f = MAX = 1/ tRC (MIN)
Current: Operating
f = MAX = 1/ tRC (MIN)
Current: Operating
Outputs Open
Outputs Open
CS\>VIH; VCC = MAX
Power
Supply
Supply
CS\>VIH; VCC = MAX
Power
f = MAX = 1/ tRC (MIN)
Current:
Standby f = MAX = 1/ tRC (MIN)
Current:
Standby
Outputs Open
Outputs Open
VIN VCC 0.2V, or
VIN =
=
VCC -
-
0.2V, or
VSS +0.2V
VSS +0.2V
VCC=Max;
0Hz
VCC=Max; f
f
=
=
0Hz
I
SBT1
I
SBT1
40
80
40
40 35
35
30
30
30
mA
80 240 240 190 190 150 150 mA
3,
3,
13
13
CMOS Standby
CMOS Standby
I
SBT2
I
SBT2
20
80
20
80
20
80
20
80
20
80
20
80
20
80
20
mA
mA
80
AS8S512K32 & AS8S512K32A
AS8S512K32 & AS8S512K32A
Rev. 6.9 08/13
Rev. 6.0 6/05
3
3
Micross Components reserves the right to change products or specifications without notice.
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
Austin Semiconductor, Inc.
CAPACITANCE
(V
IN
= 0V, f = 1MHz, T
A
= 25
o
C
)1
C
ADD
C
OE
C
WE,
C
CS
C
WE
("A" version)
SYMBOL
SYMBOL
PARAMETER
A0 - A18 Capacitance
OE\ Capacitance
WE\ and CS\ Capacitance
WE\ Capacitance
PARAMETER
AS8S512K32
& AS8S512K32A
UNITS
AS8S512K32
pF
& AS8S512K32A
pF
pF
pF
pF
UNITS
pF
MAX
50
50
20
20
50
MAX
50
SRAM
C
IO
0- I/O
= 1MHz, T
CAPACITANCE
(V
I/O
= 0V, f
31 Capacitance
= 25
o
C
)1
IN
A
C
ADD
A0 - A18 Capacitance
NOTE:
C
OE
OE\ Capacitance
1. This parameter is sampled.
C
WE,
C
CS
WE\ and CS\ Capacitance
C
IO
I/O 0- I/O 31 Capacitance
C
WE
("A" version)
WE\ Capacitance
50
20
20
50
pF
pF
pF
pF
NOTE:
1. This parameter is sampled.
AC TEST CONDITIONS
Test Specifications
Input pulse levels.........................................V
SS
to 3V
Input rise and fall times.........................................5ns
Input timing reference levels...............................1.5V
AC TEST CONDITIONS
Output reference levels........................................1.5V
Output load..............................................See Figure 1
Test Specifications
Input pulse levels.........................................V
SS
to 3V
Input rise and fall times.........................................5ns
Input timing reference levels...............................1.5V
Output reference levels........................................1.5V
Output load..............................................See Figure 1
Current Source
Device
Under
Test
-
+
+
I
OL
Ceff = 50pf
Current Source
Vz = 1.5V
(Bipolar
Supply)
I
OH
NOTES:
Vz is programmable from -2V to + 7V.
I
OL
and I
OH
programmable from 0 to 16 mA.
Vz is typically the midpoint of V
OH
and V
OL
.
I
OL
and I
OH
are adjusted to simulate a typical resistive load
circuit.
NOTES:
Vz is programmable from -2V to + 7V.
AS8S512K32 & AS8S512K32A
I
OL
and I
OH
programmable from 0 to 16 mA.
Rev. 6.0 6/05
Vz is typically the midpoint of V
OH
and V
OL
.
4
I
OL
and I
OH
are adjusted to simulate a typical resistive load
circuit.
Figure 1
Figure 1
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
AS8S512K32 & AS8S512K32A
Rev. 6.9 08/13
Micross Components reserves the right to change products or specifications without notice.
4
AS8S512K32
& AS8S512K32A
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
(NOTE 5) (-55
o
C<T
A
< 125
o
C and -40
o
C to +85
o
C; V
CC
= 5V +10%)
DESCRIPTION
READ CYCLE
READ cycle time
Address access time
Chip select access time
Output hold from address change
Chip select to output in Low-Z
Chip select to output in High-Z
Output enable access time
Output enable to output in Low-Z
Output disable to output in High-Z
WRITE CYCLE
WRITE cycle time
Chip select to end of write
Address valid to end of write
Address setup time
Address hold from end of write
WRITE pulse width
WRITE pulse width
Data setup time
Data hold time
Write disable to output in Low-z
Write enable to output in High-Z
SRAM
SYMBOL
RC
AA
t
ACS
t
OH
t
LZCS
t
HZCS
t
AOE
t
LZOE
t
HZOE
t
t
-12
-15
-17
-20
-25
-35
-45
-55
UNITS NOTES
MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX
12
12
12
2
2
7
7
0
7
12
10
10
2
1
10
10
8
0
2
7
15
12
12
2
1
12
12
10
0
2
8
0
9
17
15
15
2
1
15
15
12
0
2
9
2
2
8
8
0
12
20
15
15
2
1
15
15
10
0
2
11
15
15
15
2
2
9
9
0
12
25
17
17
2
1
17
17
12
0
2
13
17
17
17
2
2
10
10
0
12
35
20
20
2
1
20
20
15
0
2
15
20
20
20
2
2
12
12
0
15
45
25
25
2
1
25
25
20
0
2
15
25
25
25
2
2
15
15
0
20
55
25
25
2
1
25
25
20
0
2
15
35
35
35
2
2
20
20
0
20
45
45
45
2
2
20
20
55
55
55
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
4,6,7
4,6,7
4,6
4,6
WC
CW
t
AW
t
AS
t
AH
t
WP1
t
WP2
t
DS
t
DH
t
LZWE
t
HZWE
t
t
4,6,7
4,6,7
AS8S512K32 & AS8S512K32A
Rev. 6.9 08/13
Micross Components reserves the right to change products or specifications without notice.
5
无线连接
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
