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HMP512F7FFP8C-Y5N3

产品描述DDR DRAM, 128MX72, CMOS, ROHS COMPLIANT, DIMM-240
产品类别存储    存储   
文件大小627KB,共26页
制造商SK Hynix(海力士)
官网地址http://www.hynix.com/eng/
标准  
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HMP512F7FFP8C-Y5N3概述

DDR DRAM, 128MX72, CMOS, ROHS COMPLIANT, DIMM-240

HMP512F7FFP8C-Y5N3规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
零件包装代码DIMM
包装说明DIMM, DIMM240,40
针数240
Reach Compliance Codecompliant
ECCN代码EAR99
访问模式DUAL BANK PAGE BURST
其他特性AUTO/SELF REFRESH
最大时钟频率 (fCLK)333 MHz
I/O 类型COMMON
JESD-30 代码R-XDMA-N240
内存密度9663676416 bit
内存集成电路类型DDR DRAM
内存宽度72
功能数量1
端口数量1
端子数量240
字数134217728 words
字数代码128000000
工作模式SYNCHRONOUS
最高工作温度95 °C
最低工作温度
组织128MX72
输出特性3-STATE
封装主体材料UNSPECIFIED
封装代码DIMM
封装等效代码DIMM240,40
封装形状RECTANGULAR
封装形式MICROELECTRONIC ASSEMBLY
峰值回流温度(摄氏度)260
电源1.5,1.8 V
认证状态Not Qualified
刷新周期8192
自我刷新YES
最大供电电压 (Vsup)1.575 V
最小供电电压 (Vsup)1.455 V
标称供电电压 (Vsup)1.5 V
表面贴装NO
技术CMOS
温度等级OTHER
端子形式NO LEAD
端子节距1 mm
端子位置DUAL
处于峰值回流温度下的最长时间20
Base Number Matches1

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240pin Fully Buffered DDR2 SDRAM DIMMs based on 512 Mb F-ver.
This Hynix’s Fully Buffered DIMM is a high-bandwidth & large capacity channel solution that has a narrow
host interface. Hynix’s FB-DIMM features novel architecture including the Advanced Memory Buffer that
isolates the DDR2 SDRAMs from the channel. This single component located in the front side center of
each DIMM, acts as a repeater and buffer for all signals and commands which are exchanged between the
host controller and the DDR2 SDRAMs including data in and output. The AMB communicates with the host
controller and adjacent DIMMs on a system board using an industry standard Differential Point to Point
Link Interface at 1.5V power.
The AMB also allows buffering of memory traffic to support large memory capacities. All memory control
for the DDR2 SDRAM devices resides in the host, including memory request initiation, timing, refresh,
scrubbing, sparing, configuration access and power management. The AMB interface is responsible for
handling channel and memory requests to and from the local FBDIMM and for forwarding request to other
FBDIMMs on the memory channel.
FEATURES
240 pin Fully Buffered ECC dual In-Line DDR2 SDRAM Module
JEDEC standard Double Data Rate2 Synchronous DRAMs (DDR2 SDRAMs) with 1.8V +/- 0.1V Power Supply
All inputs and outputs are compatible with SSTL_1.8 interface
Built with 512Mb DDR2 SDRAMs in 60ball FBGA
Host interface and AMB component industry standard compliant
MBIST & IBIST test functions
4 Bank architecture
OCD (Off-Chip Driver Impedance Adjustment)
ODT (On-Die Termination)
Fully differential clock operations (CK & CK)
Programmable Burst Length 4 / 8 with both sequential and interleave mode
Auto refresh and self refresh supported
8192 refresh cycles / 64ms
Serial presence detect with EEPROM
133.35 x 30.35 mm form factor
RoHS compliant
Full Module Heat Spreader
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev 1.2 / Feb. 2009
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