ASMT-MYA0
1W Power LED Light Source on MCPCB
Data Sheet
Description
Avago Technologies’ 1W Warm White Power LED is a high
performance energy efficient device which can handle
high thermal and high driving current. The exposed pad
design has excellent heat transfer from the package to
the motherboard.
The Warm White Power LED is available in various color
temperature ranging from 2600K to 4000K. The product
has high Color Rendering Index (CRI) which provides
excellent color perception and visual clarity.
Features
•
Available in Warm White color.
•
Energy efficient
•
High current operation.
•
Long operation life.
•
Wide viewing angle.
•
Silicone encapsulation
Specifications
•
InGaN Technology
•
3.6V, 350 mA (typical)
•
110 viewing angle
Package Dimensions
Applications
•
Portable (flash light, bicycle head light)
•
Reading light
•
Architectural lighting
•
Garden lighting
•
Decorative lighting
Notes:
1. All dimensions in millimeters.
2. Tolerance is ±0.1mm unless otherwise specified.
Device Selection Guide at Junction Temperature Tj = 25½½
½½
½
Luminous Flux, Φv
[1,2,3]
(lm)
½olor
Warm White
Part Number
ASMT-MYA0
Min
43.0
Typ
50.0
Max
73.0
Test ½urrent (mA)
350
Dice Technology
InGaN
Notes:
1. Φ
V
is the total luminous flux output as measured with an integrating sphere at 25ms mono pulse condition.
2. Flux tolerance is ±10 %
3. Φ
V
data are only applicable for ASMT-MY00 component level device only.
Part Numbering System
ASMT-M x A0 - N x
1
x
2
x
3
0
Color Bin Selection
Max Flux Bin Selection
Min Flux Bin Selection
Color
Y - Warm White
Absolute Maximum Ratings
[3]
at T
A
= 25½½
Parameter
DC Forward Current
[1]
Peak Pulsing Current
[]
Power Dissipation
LED Junction Temperature
Storage Temperature Range
ASMT-MYA0
350
500
1400
110
-40 to +100
Units
mA
mA
mW
°C
°C
°C
Operating Ambient Temperature Range -40 to +85
Note:
1. DC forward current – derate linearly based on Figure 5.
2. Pulse condition duty factor = 10%, Frequency = 1kHz.
3. Absolute Maximum Rating data are only applicable for ASMT-MY00
component level device only.
Optical ½haracteristics
[2]
(T
A
= 25 ½½)
½orrelated ½olor
Temperature, ½½T (Kelvin)
Part Number
ASMT-MYA0
½olor
Warm White
Min
600
Max
4000
Viewing Angle 2½½½
[1]
½½½
½½
(Degrees)
Typ
110
Luminous Efficiency (lm/W)
Typ
40
Notes:
1. θ½ is the off-axis angle where the luminous intensity is ½ the peak intensity.
2. Optical Characteristics data are only applicable for ASMT-MY00 component level device only.
Electrical ½haracteristic
[3]
(T
A
= 25½½)
Forward Voltage V
F
(Volts) @ I
F
= 350mA
Dice Type
InGaN
Typ
3.6
Max.
4.0
Reverse Voltage V
R [1]
Not recommended
Thermal Resistance R
½
j-b
(½½/W)
[2]
Typ.
18
Note:
1. Not designed for reverse bias operation.
2. R
θj-b
is Thermal Resistance from LED junction to MCPCB.
3. Electrical Characteristic data are only applicable for ASMT-MY00 component level device only.
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
380
430
480
530
580
WARM WHITE
500
FORWARD CURRENT - mA
RELATIVE INTENSITY
450
400
350
300
250
200
150
100
50
0
0.00
630
680
730
780
0.50
1.00
1.50
2.00
2.50
3.00
3.50
4.00
WAVELENGTH - nm
FORWARD VOLTAGE - V
Figure 1. Relative intensity vs. wavelength
1.40
Figure 2. Forward ½urrent vs Forward Voltage
1.0
0.9
0.8
RELATIVE INTENSITY
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
Warm White
RELATIVE LUMINOUS FLUX (v) - lm
1.20
1.00
0.80
0.60
0.40
0.20
0.00
0
50
100 150 200 250 300 350 400 450 500
MONO PULSE CURRENT - mA
-90
-70
-50
-30
-10
10
30
50
70
90
OFF-AXIS ANGLE (°)
Figure 3. Relative Luminous Flux vs. Mono Pulse ½urrent
400
Figure 4. Radiation Pattern
I
F
MAX FORWARD CURRENT - mA
350
300
TEMPERATURE
250
200
150
100
50
0
60 - 120 SEC.
0
10
20
30
40
50
60
70
T
A
AMBIENT TEMPERATURE - °C
80
90
TIME
Rθ
JA
= 50°C/W
Rθ
JA
= 40°C/W
Rθ
JA
= 30°C/W
217°C
200°C
150°C
3°C/SEC. MAX.
255 - 260 °C
3°C/SEC. MAX.
10 - 30 SEC.
6°C/SEC. MAX.
100 SEC. MAX.
(Acc. to J-STD-020C)
Figure 5. Maximum forward current vs. ambient temperature
Derated based on T
J
MAX = 110½½, R½
JA
= 30½½/W / 40½½/W and 50½½/W
Figure 6. Recommended Reflow Soldering
3
RELATIVE FORWARD VOLTAGE SHIFT (mV)
200
150
100
50
0
-50
-100
-150
-200
-40
-15
10
35
60
85
TEMPERATURE - °C
Figure 7. Recommended soldering land pattern
100
90
Figure 8. Temperature vs. relative forward voltage shift
RELATIVE INTENSITY (%)
80
70
60
50
40
30
20
10
0
25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 100 105 110
JUNCTION TEMPERATURE (°C)
Figure 9. Relative LOP vs. junction temperature
Note: All parametric charts are only applicable for ASMT-MY00 component level device only.
4
½olor Bin Selections [X
3
]
Individual reel will contain parts from one full bin only.
0
A
B
C
D
E
F
Z
Y
W
V
U
Q
P
N
M
J
1
3
4
5
6
Full Distribution
A only
B only
C only
D only
E only
F only
A and B only
B and C only
C and D only
D and E only
E and F only
A, B and C only
B, C and D only
C, D and E only
D, E and F only
Special Color Bin
A, B, C and D only
E, F, G and H only
B, C, D and E only
C, D, E and F only
A, B, C, D and E only
B, C, D, E, and F only
Flux Bin Limit
[1]
(For reference only) [X
1
, X
2
]
Flux (lm) at 350mA
Bin
J
K
Min
43.0
56.0
Max
56.0
73.0
Tolerance for each bin limits is ±10 %
Note:
1. Flux Bin Limit is only applicable for ASMT-MY00 component level
device only
White
Bin A
Bin B
Bin C
Bin D
Bin E
Bin F
½olor Limits
(½hromaticity ½oordinates)
X
Y
X
Y
X
Y
X
Y
X
Y
X
Y
0.45
0.434
0.438
0.403
0.407
0.393
0.395
0.36
0.381
0.377
0.373
0.349
0.488
0.447
0.470
0.414
0.418
0.4
0.407
0.393
0.387
0.404
0.381
0.377
0.470
0.414
0.45
0.384
0.45
0.434
0.438
0.403
0.418
0.4
0.407
0.393
0.438
0.403
0.44
0.376
0.438
0.403
0.44
0.376
0.407
0.393
0.395
0.36
Tolerances ± 0.01
0.48
0.46
0.44
Y - COORDINATE
0.42
0.40
0.38
0.36
0.34
0.32
0.34
4.0k
F
E
3.5k
D
A
C
3.0k
B
2.6k
Black Body Curve
0.36
0.38
0.40
0.42
0.44
0.46
0.48
0.50
0.52
X - COORDINATE
Note:
1. Color Limit and Color binning chart are only applicable for
ASMT-MY00 component level device only
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
