ETR1414_003
■GENERAL
DESCRIPTION
The XC2164 series are high frequency, low current consumption CMOS ICs with built-in crystal oscillator and divider circuits.
For fundamental oscillation, output is selectable from any one of the following values for f0: f0/1, f0/2, f0/4, and f0/8.
With oscillation capacitors and a feedback resistor built-in, it is possible to configure a stable fundamental oscillator or 3rd
overtone oscillator using only an external crystal.
Also the series has stand-by function built-in and the type, which suspends the
oscillation completely (XC2164A~D type) or the type suspends only an output (XC2164K~N type) are available. The XC2164
series are integrated into SOT-26 packages. The series is also available in chip form.
■APPLICATIONS
●Crystal
oscillation modules
●Clocks
for micro computer, DSPs
●Communication
equipment
●Various
system clocks
■FEATURES
Oscillation Frequency
Divider Ratio
: 4MHz ~ 30MHz (Fundamental)
20MHz ~ 125MHz (3rd Overtone)
: Selectable from f0/1, f0/2, f0/4,
f0/8 (f0/2, f0/4, f0/8 are
fundamental only)
: 3-State
: 3.3V
±
10%, 5.0V
±
10%
: Stand-by function included
Selectable from Chip Enable type
and Output Enable type
Output
Operating Voltage Range
Low Power Consumption
CMOS
Built-in Oscillation Feedback Resistor
Built- in Oscillation Capacitors Cg, Cd
Packages
: SOT-26, Chip Form (1.3x0.8mm)
■PIN
CONFIGURATION
■PIN
ASSIGNMENT
PIN NUMBER
1
2
3
4
5
6
PIN NAME
Q
0
V
SS
/XT
XT
V
DD
/INH
FUNCTION
Clock Output
Ground
Crystal Oscillator
Connection (Output)
Crystal Oscillator
Connection (Input)
Power Supply
Stand-by Control*
unit [μm]
*Stand-by control pin has a pull-up resistor built-in.
■/INH,
Q
0
PIN FUNCTION
/I
NH
“H” or OPEN
“L”
H = High level
L = Low level
Q
0
Clock Output
High impedance
1/12
XC2164
Series
■PAD
LAYOUT FOR CHIP FORM
■PAD
DIMENSIONS
PIN NUMBER
1
2
3
4
5
6
PIN
NAME
Q
0
V
SS
/ XT
XT
V
DD
/ INH
PAD DIMENSIONS
X
Y
514
- 264
222
- 264
- 450
- 264
- 450
264
514
27
47
264
unit [μm]
1.3×0.8mm
XC2164xx1xxT : 280±20μm
XC2164xx1xxF : 200±20μm
V
DD
Level
100×100μm
■
PRODUCT CLASSIFICATION
●Ordering
Information
XC2164
①②③④⑤⑥
DESIGNATOR
DESCRIPTION
SYMBOL
A
B
C
D
K
L
M
N
5
6
1
(Table 1)
(Table 2)
C
M
R
L
T
F
DESCRIPTION
: Chip Enable: f0/1
: Chip Enable: f0/2 (Fundamental only)
: Chip Enable: f0/4 (Fundamental only)
: Chip Enable: f0/8 (Fundamental only)
: Output Enable: f0/1
: Output Enable: f0/2 (Fundamental only)
: Output Enable: f0/4 (Fundamental only)
: Output Enable: f0/8 (Fundamental only)
: Not polyimide coating on the chip surface (SOT-26 only)
: Polyimide coating on the chip surface (Chip form only)
: CMOS (V
DD
/2) *TTL: Fundamental 4MHz to 30MHz
: 3rd Overtone, built-in type
: Fundamental, built-in type
: Chip form
: SOT-26
: Embossed tape, standard feed
: Embossed tape, reverse feed
: Chip tray (Wafer thickness : 280±20μm)
: Chip tray (Wafer thickness : 200±20μm)
①
Divider Ratio
&
/INH Pin Function
②
③
④
⑤
Chip Surface Treatment
Duty Level
Frequency Range & Rf,
Cg, Cd Values
Packages
⑥
Device Orientation
Table 1: 3rd Overtone, Built-In Type
SYMBOL
A
B
C
D
E
F
H
K
L
FREQUENCY RANGE
3.3V ±10%
5.0V ±10%
−
20MHz to 30MHz
20MHz to 30MHz
30MHz to 40MHz
30MHz to 40MHz
40MHz to 50MHz
40MHz to 50MHz
50MHz to 65MHz
50MHz to 65MHz
65MHz to 80MHz
65MHz to 80MHz
80MHz to 95MHz
80MHz to 95MHz
95MHz to 110MHz
95MHz to 110MHz
110MHz to 125MHz
110MHz to 125MHz
−
Rf
(kΩ)
9.0
6.5
5.0
3.5
2.8
2.5
2.2
2.0
2.3
Cg
(pF)
21.5
20.0
16.0
14.0
12.5
10.0
8.0
7.0
5.5
Cd
(pF)
21.5
20.0
16.0
14.0
12.5
10.0
8.0
7.0
5.5
Table 2: Fundamental, Built-In Type
SYMBOL
M, V
T
FREQUENCY RANGE
3.3V ±10%
5.0V ±10%
4MHz to 30MHz
4MHz to 30MHz
4MHz to 30MHz
4MHz to 30MHz
Rf
（kΩ）
3.5/7.0
3.5/7.0
Cg
（pF）
20.0
35.0
Cd
（pF）
20.0
35.0
(*)Rf = 3.5MΩ@V
DD
= 5.0V Operation
Rf = 7.0 MΩ@V
DD
=3.3V Operation
2/12
XC2164
Series
■BLOCK
DIAGRAM
■ABSOLUTE
MAXIMUM RATINGS
Ta=25℃
PARAMETER
Supply Voltage
Input Voltage
Power Dissipation
Operating Temperature Range
Storage Temperature Range
SYMBOL
V
DD
V
IN
Pd
Topr
Tstg
CONDITIONS
V
SS
- 0.3 ~ V
SS
+ 7.0
V
SS
- 0.3 ~ V
DD
+ 0.3
250*
- 40 ~ + 85
- 65 ~ + 150 (Chip Form)
- 55 ~ + 125 (SOT-26)
UNITS
V
V
mW
℃
℃
℃
** When implemented on a glass epoxy PCB. (SOT-26 package)
3/12
XC2164
Series
■ELECTRICAL
CHARACTERISTICS
●DC
Electrical Characteristics
XC2164Ax1M, T, V / XC2164Kx1M, T, V (Fundamental)
5.0V operation (unless otherwise stated, V
DD
=5.0V, No Load, Ta= -30~+80℃)
PARAMETER
Operating Voltage
"H" Level Input Voltage
"L" Level Input Voltage
"H" Level Output Voltage
"L" Level Output Voltage
SYMBOL
V
DD
V
IH
V
IL
V
OH
V
OL
CONDITIONS
MIN.
4.5
2.4
-
3.9
-
-
-
-
-
-
-
-
-
0.5
25
-
TYP.
5.0
-
-
4.2
0.3
11
11
11
11
5
5
MAX.
5.5
-
0.4
-
0.4
(15)
(15)
(15)
(15)
(8)
(8)
UNITS
V
V
V
V
V
CMOS: V
DD
=4.5V, I
OH
= - 16mA
CMOS: V
DD
=4.5V, I
OH
=16mA
/INH=Open,
Q
0
=Open
f=30MHz
XC2164Ax1M, V
XC2164Ax1T
XC2164Kx1M, V
XC2164Kx1T
XC2164Ax1M, V
/INH="L",
XC2164Ax1T
Q
0
=Open
XC2164Kx1M, V
f=30MHz
XC2164Kx1T
/INH="L"
/INH=0.7 V
DD
Supply Current 1
I
DD1
mA
μA
mA
MΩ
kΩ
MΩ
μA
Supply Current 2
I
DD2
Input Pull-Up Resistance 1
Input Pull-Up Resistance 2
Internal Oscillation
Feedback Resistance
Output Disable
Leak Current
* T.B.D.: To be determined
R
UP1
R
UP2
Rf
I
OZ
(T.B.D.*) (T.B.D.*)
9
(14)
1.0
2.0
50
100
3.5
-
-
10
/INH="L"
-
XC2164Ax1M, XC2164Kx1M (Fundamental)
3.3V operation (unless otherwise stated, V
DD
=3.3V, No Load, Ta= -30~+80℃)
PARAMETER
Operating Voltage
"H" Level Input Voltage
"L" Level Input Voltage
"H" Level Output Voltage
"L" Level Output Voltage
Supply Current 1
Supply Current 2
Input Pull-Up Resistance 1
Input Pull-Up Resistance 2
Internal Oscillation
Feedback Resistance
Output Disable
Leak Current
* T.B.D.: To be determined
SYMBOL
V
DD
V
IH
V
IL
V
OH
V
OL
I
DD1
I
DD2
R
UP1
R
UP2
Rf
Id
CONDITIONS
MIN.
2.97
2.4
-
2.5
-
-
-
-
-
1.0
35
-
TYP.
3.30
-
-
-
-
5
5
2
MAX.
3.63
-
0.4
-
0.4
(8)
(8)
(4)
UNITS
V
V
V
V
V
mA
μA
mA
MΩ
kΩ
MΩ
μA
CMOS: V
DD
=2.97V, I
OH
= - 8mA
CMOS: V
DD
=2.97V, I
OH
=8mA
XC2164Ax1M
/INH=Open,
Q
0
=Open, f=30MHz
XC2164Kx1M
/INH="L",
XC2164Ax1M
Q
0
=Open, f=30MHz
XC2164Kx1M
/INH="L"
/INH=0.7 V
DD
(T.B.D.*) (T.B.D.*)
2.0
4.0
70
140
7.0
-
-
10
/INH="L"
-
4/12
XC2164
Series
■
ELECTRICAL CHARACTERISTICS (Continued)
●DC
Electrical Characteristics (Continued)
XC2164Ax1T, V / XC2164Kx1T, V (Fundamental)
3.3V operation (unless otherwise stated, V
DD
=3.3V, No Load, Ta= -30~+80℃)
PARAMETER
Operating Voltage
"H" Level Input Voltage
"L" Level Input Voltage
"H" Level Output Voltage
"L" Level Output Voltage
SYMBOL
V
DD
V
IH
V
IL
V
OH
V
OL
CONDITIONS
MIN.
2.50
2.4
-
2.5
-
-
-
-
-
-
-
-
-
1.0
35
-
TYP.
3.30
-
-
-
-
4
5
4
5
2
2
MAX.
3.63
-
0.4
-
0.4
(6.5)
(8)
(6.5)
(8)
(4)
(4)
UNITS
V
V
V
V
V
CMOS: 2.97V, I
OH
= - 8mA
CMOS: 2.97V, I
OH
=8mA
/INH=Open,
Q
0
=Open,
f=30MHz
XC2164Ax1T
XC2164Ax1V
XC2164Kx1T
XC2164Kx1V
XC2164Ax1T
/INH="L",
XC2164Ax1V
Q
0
=Open,
XC2164Kx1T
f=30MHz
XC2164Kx1V
/INH="L"
/INH=0.7 V
DD
Supply Current 1
I
DD1
mA
μA
mA
MΩ
kΩ
MΩ
μA
Supply Current 2
I
DD2
Input Pull-Up Resistance 1
Input Pull-Up Resistance 2
Internal Oscillation
Feedback Resistance
Output Disable
Leakage Current
* T.B.D.: To be determined
R
UP1
R
UP2
Rf
I
OZ
(T.B.D.*) (T.B.D.*)
(T.B.D.*) (T.B.D.*)
2.0
4.0
70
140
7.0
-
-
10
/INH="L"
-
Comparative Chart of Oscillation Frequency vs. Supply Voltage, and Negative Resistance Value
SYMBOL
M
V
T
OSCILLATION FREQUENCY vs. SUPPLY VOLTAGE
V
DD
=3.3V±10%
±
4.3ppm
±
1.2ppm
±
9.4ppm
NEGATIVE RESISTANCE VALUE
V
DD
=3.3V
- 130Ω
- 150Ω
- 660Ω
V
DD
=5.0V
- 220Ω
- 250Ω
- 760Ω
V
DD
=5.0V±10%
±
4.5ppm
±
2.1ppm
±
7.0ppm
(The designed value when 30MHz crystal is used.)
5/12
意法半导体-低功耗射频
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