PTFA071701E
PTFA071701F
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs
170 W, 725 – 770 MHz
Description
The PTFA071701E and PTFA071701F are 170-watt, LDMOS FETs
designed for use in cellular power amplifiers in the 725 to 770 MHz
frequency band. Features include internal I/O matching, and
thermally-enhanced, ceramic open-cavity packages. Manufactured
with Infineon's advanced LDMOS process, these devices provide
excellent thermal performance and superior reliability.
PTFA071701E*
Package H-36248-2
Two-tone Drive-up
V
DD
= 30 V, I
DQ
= 900 mA,
ƒ = 765 MHz, tone spacing = 1 MHz
-20
60
55
Intermodulation Distortion (dBc)
-35
-40
-45
-50
-55
-60
-65
44
46
48
IM5
Efficiency
ue
45
40
35
30
25
20
15
52
54
IM3
Drain Efficiency (%)
-30
50
d
-25
nt
in
IM7
sc
o
50
Output Power, PEP (dBm)
RF Characteristics
Two-carrier WCDMA Measurements
(not subject to production test—verified by design/characterization in Infineon test fixture)
V
DD
= 30 V, I
DQ
= 1.0 A, P
OUT
= 40 W average,
ƒ
1
= 760, ƒ
2
= 770 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8.1 dB at 0.01% CCDF
Characteristic
Gain
Drain Efficiency
Adjacent Channel Power Ratio
All published data at T
CASE
= 25°C unless otherwise indicated
di
pr
od
uc
Features
•
•
•
•
•
•
•
PTFA071701F*
Package H-37248-2
Thermally-enhanced packages, Pb-free and
RoHS-compliant
Broadband internal matching
Typical CDMA2000 performance at 770 MHz, 30 V
- Average output power = 35 W
- Linear Gain = 18 dB
- Efficiency = 34%
- Adjacent channel power = –50 dBc
Typical CW performance, 770 MHz, 30 V
- Output power at P–1dB = 165 W
- Efficiency = 62%
Integrated ESD protection: Human Body Model,
Class 2 (minimum)
Excellent thermal stability, low HCI drift
Capable of handling 10:1 VSWR @ 30 V,
170 W (CW) output power
Symbol
G
ps
Min
—
—
—
ts
Typ
18.5
32
–36
Max
—
—
—
Unit
dB
%
dBc
η
D
ACPR
*See Infineon distributor for future availability.
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
– DRAFT ONLY
1 of 9
Rev. 04, 2015-01-14
PTFA071701E
PTFA071701F
Confidential, Limited Internal Distribution
RF Characteristics
(cont.)
Two-tone Measurements
(tested in Infineon test fixture)
V
DD
= 30 V, I
DQ
= 0.9 A, P
OUT
= 150 W PEP, ƒ = 765 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G
ps
Min
18.0
44
—
Typ
18.7
46
Max
—
—
–28
Unit
dB
%
dBc
η
D
IMD
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 mA
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 63 V, V
GS
= 0 V
pr
od
uc
Symbol
Min
65
—
—
V
(BR)DSS
I
DSS
I
DSS
R
DS(on)
V
GS
I
GSS
—
2.0
—
ts
–29.5
Typ
—
—
—
Max
—
1.0
10.0
—
3.0
1.0
Unit
V
µA
µA
Ω
V
µA
Gate Leakage Current
V
GS
= 10 V, V
DS
= 0 V
ue
Operating Gate Voltage
V
DS
= 30 V, I
DQ
= 1.0 A
d
On-State Resistance
V
GS
= 10 V, V
DS
= 0.1 V
0.07
2.48
—
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
nt
in
Symbol
V
DSS
V
GS
T
J
T
STG
R
θJC
Value
65
–0.5 to +12
200
–40 to +150
0.38
Unit
V
V
°C
°C
°C/W
Thermal Resistance (T
CASE
= 70°C, 170 W CW)
Ordering Information
Type and Version
PTFA071701E V4
PTFA071701E V4 R250
PTFA071701F V4
PTFA071701F V4 R250
di
Storage Temperature Range
sc
o
Package Type
H-36248-2
H-36248-2
H-37248-2
H-37248-2
Package Description
Slotted flange, single-ended
Slotted flange, single-ended
Earless flange, single-ended
Earless flange, single-ended
Shipping
Tray
Tape & Reel 250 pcs
Tray
Tape & Reel 250 pcs
*See Infineon distributor for future availability.
Data Sheet
– DRAFT ONLY
2 of 9
Rev. 04, 2015-01-14
PTFA071701E
PTFA071701F
Confidential, Limited Internal Distribution
Typical Performance
(data taken in a production test fixture)
Power Sweep, CW Conditions
V
DD
= 30 V, I
DQ
= 0.9 A, ƒ = 770 MHz
21
20
19
65
55
50
Broadband Performance
V
DD
= 30 V, I
DQ
= 900 mA, P
OUT
= 75 W
0
-5
-10
-15
Gain (dB), Efficiency (%)
45
Gain (dB)
Gain
45
35
25
40
35
30
25
20
pr
od
uc
Gain
15
700
730
18
17
16
15
30
35
40
45
50
55
Return Loss
-20
-25
-30
-35
790
Efficiency
15
5
760
Output Power (dBm)
Frequency (MHz)
CW Performance at Selected Voltages
in
ue
d
Power Sweep
V
DD
= 30 V, ƒ = 770 MHz
nt
I
DQ
= 0.9 A, ƒ = 770 MHz
64
60
sc
o
21
20
21
20
Gain
I
DQ
= 1.3 A
I
DQ
= 1.1 A
Drain Efficiency (%)
Power Gain (dB)
56
52
48
44
40
19
18
17
19
18
17
Efficiency
36
48
49
50
V
DD
= 32 V
V
DD
= 30 V
V
DD
= 28 V
51
52
53
16
15
14
Gain (dB)
di
I
DQ
= 0.9 A
16
15
30
35
40
45
50
55
I
DQ
= 0.7 A
Output Power (dBm)
Output Power (dBm)
Data Sheet
– DRAFT ONLY
3 of 9
Rev. 04, 2015-01-14
Input Return Loss (dB)
Drain Efficiency (%)
Efficiency
ts
PTFA071701E
PTFA071701F
Confidential, Limited Internal Distribution
Reference Circuit
0.001µF
R2
1.3K
V
R1
1.2K
V
QQ1
LM7805
V
DD
Q1
BCP56
C2
0.001µF
R3
2K
V
C3
0.001µF
R4
2K
V
R6
5.1K
V
C4
0.1µF
R5
2K
V
R7
10
V
C5
10µF
35V
R8
5.1K
V
C6
4.7µF
C7
0.1µF
C8
62pF
pr
od
uc
L1
C12
62pF
C13
2.2µF
ts
V
DD
C15
0.1µF
C16
10µF
50V
l
4
l
6
C14
10µF
50V
J1
d
C9
62pF
R9
10
V
DUT
C22
3.3pF
C24
62pF
l
1
l
2
l
3
C10
3.9pF
l
5
l
8
l
9
l
10
C23
3.3pF
L2
l
11
l
12
J2
ue
C11
6.2pF
l
7
in
Reference circuit schematic for
ƒ
= 770 MHz
Circuit Assembly Information
DUT
PTFA071701E or PTFA071701F
PCB
0.76 mm [.030"] thick,
ε
r
= 3.48
Microstrip
l1
l2
l3
l4
l5
l6, l7
l8
l9
(taper)
l10
(taper)
l11
l12
LDMOS Transistor
Rogers RO4350
Dimensions: L x W ( mm)
5.84 x 1.65
12.32 x 2.54
8.00 x 2.54
35.94 x 0.76
20.32 x 17.78
24.13 x 2.03
29.97 x 16.51
13.46 x 16.51 / 3.05
0.51 x 3.05 / 2.54
1.27 x 2.54
3.76 x 1.65
5 of 9
sc
o
nt
C17
62pF
C18
2.2µF
C19
10µF
50V
C20
0.1µF
C21
10µF
50V
di
1 oz. copper
Dimensions: L x W (in.)
0.230
0.485
0.315
1.415
0.800
0.950
1.180
0.530
0.020
0.050
0.148
x 0.065
x 0.100
x 0.100
x 0.030
x 0.700
x 0.080
x 0.650
x 0.650 / 0.120
x 0.120 / 0.100
x 0.100
x 0.065
Electrical Characteristics at 770 MHz
0.025
0.053
0.035
0.148
0.094
0.103
0.139
0.062
0.002
0.005
0.016
λ,
50.7
Ω
λ,
38.4
Ω
λ,
38.4
Ω
λ,
76.7
Ω
λ,
7.8
Ω
λ,
44.5
Ω
λ,
8.4
Ω
λ,
8.4
Ω
/ 33.8
Ω
λ,
33.8
Ω /
38.4
Ω
λ,
38.4
Ω
λ,
50.7
Ω
Data Sheet
– DRAFT ONLY
Rev. 04, 2015-01-14
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