PTFA181001E
PTFA181001F
Thermally-Enhanced High Power RF LDMOS FETs
100 W, 1805 – 1880 MHz
Description
The PTFA181001E and PTFA181001F are 100-watt LDMOS FETs
designed for EDGE and WCDMA power amplifier applications in the
DCS band. Features include input and output matching, and
thermally-enhanced packages with slotted or earless flanges.
Manufactured with Infineon's advanced LDMOS process, these
devices provide excellent thermal performance and superior
reliability.
PTFA181001E
Package H-36248-2
PTFA181001F
Package H-37248-2
2-Carrier WCDMA Drive-up
V
DD
= 28 V, I
DQ
= 750 mA, ƒ = 1880 MHz, 3GPP WCDMA
signal, P/A R = 8 dB, 10 MHz carrier spacing
-23
35
•
•
•
IM3 (dBc), ACPR (dBc)
IM3
ue
20
15
10
5
46
-33
-38
-43
-48
-53
34
36
38
25
Drain Efficiency (%)
d
•
•
•
•
•
-28
Efficiency
30
in
nt
ACPR
Average Output Power (dBm)
sc
o
40
42
44
RF Characteristics
EDGE Measurements
(not subject to production test—verified by design/characterization in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 750 mA, P
OUT
= 45 W, ƒ = 1879.8 MHz
Characteristic
Error Vector Magnitude
Modulation Spectrum @ 400 KHz
Modulation Spectrum @ 600 KHz
Gain
Drain Efficiency
All published data at T
CASE
= 25°C unless otherwise indicated
di
pr
Symbol
RMS EVM
ACPR
ACPR
G
ps
od
Min
—
—
—
—
—
Features
Thermally-enhanced packages
Broadband internal matching
Typical EDGE performance at 1879.8 MHz, 28 V
- Average output power = 45 W
- Linear Gain = 16.5 dB
- Efficiency = 36%
- EVM RMS = 1.8%
Typical CW performance, 1880 MHz, 28 V
- Output power at P–1dB = 120 W
- Gain 15.5 dB
- Efficiency = 52%
Integrated ESD protection: Human Body Model,
Class 2 (minimum)
Excellent thermal stability, low HCI drift
Capable of handling 10:1 VSWR @ 28 V,
100 W (CW) output power
Pb-free and RoHS compliant
uc
Typ
1.8
–61
–73
16.5
36
t
Max
—
—
—
—
—
Unit
%
dBc
dBc
dB
%
η
D
*See Infineon distributor for future availability.
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
– DISCONTINUED
1 of 11
Rev. 03,
2014-02-12
PTFA181001E
PTFA181001F
RF Characteristics
(cont.)
Two-tone Measurements
(tested in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 750 mA, P
OUT
= 100 W PEP, ƒ = 1850 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G
ps
Min
16
39
—
Typ
16.5
41
Max
—
—
–28
Unit
dB
%
dBc
η
D
IMD
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 mA
V
DS
= 28 V, V
GS
= 0 V
V
DS
= 63 V, V
GS
= 0 V
Symbol
od
Min
65
—
—
—
2.0
—
T
J
uc
Typ
—
—
—
0.85
2.5
—
t
–30
Max
—
1.0
10.0
—
3.0
1.0
Unit
V
µA
µA
Ω
V
µA
V
(BR)DSS
I
DSS
I
DSS
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 28 V, I
D
= 750 mA
V
GS
= 10 V, V
DS
= 0 V
ue
d
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
nt
in
Symbol
V
DSS
V
GS
pr
R
DS(on)
V
GS
I
GSS
Value
65
–0.5 to +12
200
407
2.33
–40 to +150
0.43
Unit
V
V
°C
W
W/°C
°C
°C/W
Junction Temperature
Above 25°C derate by
Storage Temperature Range
di
Total Device Dissipation
sc
o
P
D
T
STG
R
θJC
Thermal Resistance (T
CASE
= 70°C, 100 W CW)
Ordering Information
Type and Version
PTFA181001E
PTFA181001F
V4
V4
Package Type
H-36248-2
H-37248-2
Package Description
Thermally-enhanced slotted flange, single-ended
Thermally-enhanced earless flange, single-ended
Marking
PTFA181001E
PTFA181001F
*See Infineon distributor for future availability.
Data Sheet
– DISCONTINUED
2 of 11
Rev. 03, 2014-02-12
PTFA181001E
PTFA181001F
Typical Performance
(data taken in a production test fixture)
Edge EVM and Modulation Spectrum
vs. Quiescent Current
V
DD
= 28 V, ƒ = 1879.8 MHz, P
OUT
= 46.5 dBm
2.6
2.4
-10
-20
45
EDGE Modulation Spectrum Performance
V
DD
= 28 V, I
DQ
= 750 mA, ƒ = 1879.8 MHz
EVM RMS (avg. %)
.
2.0
1.8
1.6
1.4
1.2
1.0
0.65
0.70
0.75
0.80
-40
-50
-60
400 kHz
-60
uc
600 kHz
41
43
45
47
49
2.2
-30
25
400 kHz
600 kHz
0.85
-70
-80
-80
od
37
39
37
39
41
15
pr
-90
0.90
-100
5
EDGE EVM Performance
in
ue
nt
V
DD
= 28 V, I
DQ
= 750 mA, ƒ = 1879.8 MHz
8
sc
o
45
d
Quiescent Current (A)
Output Power (dBm)
Intermodulation Distortion vs. Output Power
(as measured in a broadband circuit)
V
DD
= 28 V, I
DQ
= 750 mA, ƒ
1
= 1879 MHz, ƒ
2
= 1880 MHz
-20
-25
Efficiency
3rd Order
EVM RMS (avg. %)
.
6
35
Drain Efficiency (%)
-30
IMD (dBc)
-35
-40
-45
-50
-55
-60
di
5th
4
25
2
15
7th
EVM
0
37
39
41
43
45
47
49
5
-65
43
45
47
49
Output Power (dBm)
Output Power, Avg. (dBm)
Data Sheet
– DISCONTINUED
3 of 11
Rev. 03, 2014-02-12
Drain Efficiency (%)
-40
t
EVM
Modulation Spectrum (dBc)
-20
Modulation Spectrum (dBc)
Efficiency
35
PTFA181001E
PTFA181001F
Typical Performance
(cont.)
Gain & Efficiency vs. Output Power
V
DD
= 28 V, I
DQ
= 750 mA, ƒ = 1880 MHz
52
Output Power
(P–1dB)
vs. Drain Voltage
I
DQ
= 750 mA, ƒ = 1880 MHz
18
17
65
55
Drain Efficiency (%)
Output Power (dBm)
Gain (dB)
16
15
14
45
35
25
51
50
Efficiency
13
12
36
38
40
42
44
46
48
50
52
15
5
pr
49
24
od
26
28
30
32
in
ue
IS-95 CDMA Performance
d
-10
Output Power (dBm)
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
1.03
0.15 A
0.44 A
0.73 A
1.10 A
2.20 A
3.30 A
4.41 A
5.51 A
35
30
T
CASE
= 90°C
sc
o
T
CASE
= 25°C
Normalized Bias Voltage (V)
Adj. Ch. Power Ratio (dBc)
Efficiency
nt
V
DD
= 28 V, I
DQ
= 750 mA, ƒ = 1880 MHz
-20
-30
-40
-50
-60
1.02
1.01
1.00
0.99
0.98
0.97
0.96
0.95
-20
0
20
40
60
80
100
Drain Efficiency (%)
25
20
15
10
5
0
33
35
di
ACP F
C
– 0.75 MHz
ACPR F
C
+ 1.98 MHz
37
39
41
43
45
47
-70
-80
Output Power, Avg. (dBm)
Case Temperature (°C)
Data Sheet
– DISCONTINUED
5 of 11
uc
Drain Voltage (V)
Gain
t
Rev. 03, 2014-02-12
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