PEMD9; PUMD9
NPN/PNP resistor-equipped transistors;
R1 = 10 k, R2 = 47 k
Rev. 6 — 22 November 2011
Product data sheet
1. Product profile
1.1 General description
NPN/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted
Device (SMD) plastic packages.
Table 1.
Product overview
Package
NXP
PEMD9
PUMD9
SOT666
SOT363
JEITA
-
SC-88
PNP/PNP
complement
PEMB9
PUMB9
NPN/NPN
complement
PEMH9
PUMH9
Package
configuration
ultra small and flat
lead
very small
Type number
1.2 Features and benefits
100 mA output current capability
Built-in bias resistors
Simplifies circuit design
Reduces component count
Reduces pick and place costs
AEC-Q101 qualified
1.3 Applications
Low current peripheral driver
Control of IC inputs
Replaces general-purpose transistors in digital applications
1.4 Quick reference data
Table 2.
Symbol
V
CEO
I
O
R1
R2/R1
Quick reference data
Parameter
collector-emitter voltage
output current
bias resistor 1 (input)
bias resistor ratio
Conditions
open base
Min
-
-
7
3.7
Typ
-
-
10
4.7
Max
50
100
13
5.7
Unit
V
mA
k
Per transistor; for the PNP transistor (TR2) with negative polarity
NXP Semiconductors
PEMD9; PUMD9
NPN/PNP resistor-equipped transistors; R1 = 10 k, R2 = 47 k
2. Pinning information
Table 3.
Pin
1
2
3
4
5
6
Pinning
Description
GND (emitter) TR1
input (base) TR1
output (collector) TR2
GND (emitter) TR2
input (base) TR2
output (collector) TR1
1
2
3
001aab555
TR1
R2
R1
R1
R2
TR2
Simplified outline
6
5
4
Graphic symbol
6
5
4
1
2
3
006aaa143
3. Ordering information
Table 4.
Ordering information
Package
Name
PEMD9
PUMD9
-
SC-88
Description
plastic surface-mounted package; 6 leads
plastic surface-mounted package; 6 leads
Version
SOT666
SOT363
Type number
4. Marking
Table 5.
PEMD9
PUMD9
[1]
* = placeholder for manufacturing site code
Marking codes
Marking code
[1]
D9
D*9
Type number
PEMD9_PUMD9
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 6 — 22 November 2011
2 of 16
NXP Semiconductors
PEMD9; PUMD9
NPN/PNP resistor-equipped transistors; R1 = 10 k, R2 = 47 k
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
V
I
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage TR1
positive
negative
input voltage TR2
positive
negative
I
O
I
CM
P
tot
output current
peak collector current
total power dissipation
PEMD9 (SOT666)
PUMD9 (SOT363)
Per device
P
tot
total power dissipation
PEMD9 (SOT666)
PUMD9 (SOT363)
T
j
T
amb
T
stg
[1]
[2]
Conditions
open emitter
open base
open collector
Min
-
-
-
-
-
-
-
-
Max
50
50
6
+40
6
+6
40
100
100
Unit
V
V
V
V
V
V
V
mA
mA
Per transistor; for the PNP transistor (TR2) with negative polarity
single pulse;
t
p
1 ms
T
amb
25
C
[1][2]
[1]
-
-
-
200
200
mW
mW
T
amb
25
C
[1][2]
[1]
-
-
-
65
65
300
300
150
+150
+150
mW
mW
C
C
C
junction temperature
ambient temperature
storage temperature
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Reflow soldering is the only recommended soldering method.
PEMD9_PUMD9
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 6 — 22 November 2011
3 of 16
NXP Semiconductors
PEMD9; PUMD9
NPN/PNP resistor-equipped transistors; R1 = 10 k, R2 = 47 k
400
P
tot
(mW)
300
006aac749
200
100
0
-75
-25
25
75
125
175
T
amb
(°C)
FR4 PCB, standard footprint
Fig 1.
Per device: Power derating curve for SOT363 (SC-88) and SOT666
6. Thermal characteristics
Table 7.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
PEMD9 (SOT666)
PUMD9 (SOT363)
Per device
R
th(j-a)
thermal resistance from
junction to ambient
PEMD9 (SOT666)
PUMD9 (SOT363)
[1]
[2]
Conditions
in free air
[1][2]
[1]
Min
Typ
Max
Unit
Per transistor
-
-
-
-
625
625
K/W
K/W
in free air
[1][2]
[1]
-
-
-
-
417
417
K/W
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Reflow soldering is the only recommended soldering method.
PEMD9_PUMD9
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 6 — 22 November 2011
4 of 16
NXP Semiconductors
PEMD9; PUMD9
NPN/PNP resistor-equipped transistors; R1 = 10 k, R2 = 47 k
10
3
duty cycle = 1
Z
th(j-a)
(K/W)
10
2
0.1
0.05
0.02
0.01
0.75
0.5
0.33
0.2
006aac751
10
0
1
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig 2.
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration for
PEMD9 (SOT666); typical values
006aac750
10
3
duty cycle = 1
Z
th(j-a)
(K/W)
10
2
0.1
0.05
0.02
10
0
0.75
0.5
0.33
0.2
0.01
1
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig 3.
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration for
PUMD9 (SOT363); typical values
PEMD9_PUMD9
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 6 — 22 November 2011
5 of 16
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