Power Bipolar Transistor, 2A I(C), 70V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, 10 Pin, SIP-10
| 参数名称 | 属性值 |
| 零件包装代码 | SIP |
| 包装说明 | SIP-10 |
| 针数 | 10 |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| 最大集电极电流 (IC) | 2 A |
| 集电极-发射极最大电压 | 70 V |
| 配置 | COMMON EMITTER, 4 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR |
| 最小直流电流增益 (hFE) | 1000 |
| JESD-30 代码 | R-PSIP-T10 |
| 元件数量 | 4 |
| 端子数量 | 10 |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 极性/信道类型 | NPN |
| 认证状态 | Not Qualified |
| 表面贴装 | NO |
| 端子形式 | THROUGH-HOLE |
| 端子位置 | SINGLE |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| 标称过渡频率 (fT) | 20 MHz |
| Base Number Matches | 1 |
| PUB4123 | PUB4123P | PUB4123Q | PU4123P | PU4123Q | |
|---|---|---|---|---|---|
| 描述 | Power Bipolar Transistor, 2A I(C), 70V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, 10 Pin, SIP-10 | Power Bipolar Transistor, 2A I(C), 70V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, 10 Pin, SIP-10 | Power Bipolar Transistor, 2A I(C), 70V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, 10 Pin, SIP-10 | Power Bipolar Transistor, 2A I(C), 70V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, 10 Pin, SIP-10 | Power Bipolar Transistor, 2A I(C), 70V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, 10 Pin, SIP-10 |
| 零件包装代码 | SIP | SIP | SIP | SIP | SIP |
| 包装说明 | SIP-10 | IN-LINE, R-PSIP-T10 | SIP-10 | IN-LINE, R-PSIP-T10 | IN-LINE, R-PSIP-T10 |
| 针数 | 10 | 10 | 10 | 10 | 10 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 最大集电极电流 (IC) | 2 A | 2 A | 2 A | 2 A | 2 A |
| 集电极-发射极最大电压 | 70 V | 70 V | 70 V | 70 V | 70 V |
| 配置 | COMMON EMITTER, 4 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | COMMON EMITTER, 4 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | COMMON EMITTER, 4 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | COMMON EMITTER, 4 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | COMMON EMITTER, 4 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR |
| 最小直流电流增益 (hFE) | 1000 | 2000 | 1000 | 2000 | 1000 |
| JESD-30 代码 | R-PSIP-T10 | R-PSIP-T10 | R-PSIP-T10 | R-PSIP-T10 | R-PSIP-T10 |
| 元件数量 | 4 | 4 | 4 | 4 | 4 |
| 端子数量 | 10 | 10 | 10 | 10 | 10 |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE |
| 极性/信道类型 | NPN | NPN | NPN | NPN | NPN |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | NO | NO | NO | NO | NO |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子位置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON |
| 标称过渡频率 (fT) | 20 MHz | 20 MHz | 20 MHz | 20 MHz | 20 MHz |
| Base Number Matches | 1 | 1 | 1 | - | - |
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