Power Transistor Arrays
PUB4211
(PU4211)
, PUB4511
(PU4511)
Silicon PNP epitaxial planar type
For power amplification
Complementary to PUB4111 (PU4111),
PUB4411 (PU4411)
■
Features
25.3
±0.2
Unit: mm
M
Di ain
sc te
on na
tin nc
ue e/
d
1.65
±0.2
Solder Dip
5.3
±0.5
4.4
±0.5
4.0
±0.2
■
Absolute Maximum Ratings
T
C
=
25°C
Parameter
Symbol
V
CBO
V
CEO
I
C
V
EBO
I
CP
P
C
T
j
Collector-base voltage (Emitter open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector-emitter voltage (Base open)
Collector power dissipation
Junction temperature
Storage temperature
T
a
=
25°C
T
stg
■
Electrical Characteristics
T
C
=
25°C
±
3°C
Parameter
Symbol
V
CEO
V
BE
I
CES
Collector-emitter voltage (Base open)
Base-emitter saturation voltage
nt
in
Collector-emitter cutoff current (V
BE
=
0)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
co
Emitter-base cutoff current (Collector open)
Collector-emitter saturation voltage
V
CE(sat)
f
T
t
on
t
f
Transition frequency
Turn-on time
ai
Storage time
M
Fall time
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
■
Internal Connection
•
PUB4211
3
2
1
4
5
6
7
8
10
9
Pl
e
Publication date: March 2004
pl d in
as
an c
e
ed lud
pl
vi
an m m es
si
tf
ed ain ai fo
ol
lo dis dis ten nte llow
ht w c
tp in o co an nan in
:// g nt n ce c g
pa U in tin t e fo
na RL ue ue ype typ ur
so a d t d
e Pr
od
ni bo yp typ
c. u e e
uc
ne t l
d
tl
at
ife
t/s e
cy
c/ st
en in
cl
e
fo
st
rm
ag
at
e.
io
n.
9.5
±0.2
8.0
±0.2
•
Low collector-emitter saturation voltage V
CE(sat)
•
Satisfactory linearity of forward current transfer ratio h
FE
•
Large collector current I
C
•
PUB4211 (PU4211): PNP 4 elements
PUB4511 (PU4511): PNP 2 elements
×
2
0.8
±0.25
0.5
±0.15
1.0
±0.25
2.54
±0.2
0.5
±0.15
Rating
−60
−60
−5
−4
−8
15
Unit
V
V
V
A
A
C 1.5
±0.5
1: Emitter
2: Base
3: Collector
4: Base
5: Collector
1 2 3 4 5 6 7 8 9 10
6: Base
7: Collector
8: Base
9: Collector
10: Emitter
SIP10-A1 Package
9
×
2.54 = 22.86
±0.25
W
3.5
150
°C
°C
−55
to
+150
Conditions
Min
−60
Typ
Max
−2.0
Unit
V
V
I
C
= −30
mA, I
B
=
0
ue
V
CE
= −4
V, I
C
= −3
A
V
CE
= −60
V, V
BE
=
0
V
CE
= −30
V, I
B
=
0
V
EB
= −5
V, I
C
=
0
−400
−700
−1
250
µA
µA
V
I
CEO
I
EBO
h
FE1
h
FE2
mA
is
V
CE
= −4
V, I
C
= −1
A
40
/D
V
CE
= −4
V, I
C
= −3
A
15
ce
I
C
= −4
A, I
B
= −
0.4 A
I
C
= −4
A
−1.5
an
V
CE
= −10
V, I
C
= −
0.1 A, f
=
1 MHz
I
B1
= −
0.4 A, I
B2
=
0.4 A
V
CC
= −50
V
20
MHz
µs
µs
µs
en
0.2
0.5
nt
t
stg
0.2
•
PUB4511
2
1
3
4
5
6
7
8
9
10
Note) The part numbers in the parenthesis show conventional part number.
SJK00069AED
1
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(1)
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Consult our sales staff in advance for information on the following applications:
–
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–
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