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PUB4423P: 产品描述Power Bipolar Transistor, 2A I(C), 70V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, 10 Pin, SIP-10; 产品类别分立半导体晶体管; 文件大小212KB，共3页; 制造商Panasonic(松下); 官网地址http://www.panasonic.co.jp/semicon/e-index.html

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PUB4423P概述

Power Bipolar Transistor, 2A I(C), 70V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, 10 Pin, SIP-10

PUB4423P规格参数

参数名称	属性值
零件包装代码	SIP
包装说明	IN-LINE, R-PSIP-T10
针数	10
Reach Compliance Code	unknown
ECCN代码	EAR99
最大集电极电流 (IC)	2 A
集电极-发射极最大电压	70 V
配置	2 BANKS, COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE)	2000
JESD-30 代码	R-PSIP-T10
元件数量	4
端子数量	10
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	IN-LINE
极性/信道类型	NPN
认证状态	Not Qualified
表面贴装	NO
端子形式	THROUGH-HOLE
端子位置	SINGLE
晶体管应用	SWITCHING
晶体管元件材料	SILICON
标称过渡频率 (fT)	20 MHz
Base Number Matches	1

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Power Transistor Arrays

PUB4123

(PU4123)

, PUB4423

(PU4423)

Silicon NPN triple diffusion planar type darlington

For power amplification

■

Features

•

Built-in zener diode (60 V) between collector and base

•

Small variation in withstand pressure

•

Large energy handling capability

•

High-speed switching

•

PUB4121 (PU4121): NPN 4 elements

PUB4421 (PU4421): NPN 2 elements

25.3

±0.2

Unit: mm

Di ain

sc te

on na

tin nc

ue e/

9.5

±0.2

8.0

±0.2

1.65

±0.2

Solder Dip

5.3

±0.5

4.4

±0.5

4.0

±0.2

■

Absolute Maximum Ratings

25°C

Parameter

Symbol

CBO

CEO

EBO

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

Collector current

Peak collector current

Collector power dissipation

25°C

Junction temperature

Storage temperature

stg

■

Electrical Characteristics

25°C

3°C

Parameter

Symbol

CEO

CBO

EBO

FE1

Collector-emitter voltage (Base open)

Collector-base cutoff current (Emitter open)

Emitter-base cutoff current (Collector open)

Forward current transfer ratio

FE2 *1

Collector-emitter saturation voltage

CE(sat)

BE(sat)

Base-emitter saturation voltage

Transition frequency

Turn-on time

Storage time

Fall time

Energy handling capability

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *1: Rank classification

*2: E

s/b

test circuit

Mercury relay

Rank

Free

1 000 to 10 000 2 000 to 10 000 1 000 to 5 000

Publication date: March 2004

pl d in

an c

ed lud

an m m es

ed ain ai fo

lo dis dis ten nte llow

ht w c

tp in o co an nan in

:// g nt n ce c g

pa U in tin t e fo

na RL ue ue ype typ ur

so a d t d

e Pr

ni bo yp typ

c. u e e

ne t l

ife

t/s e

c/ st

en in

0.8

±0.25

0.5

±0.15

1.0

±0.25

2.54

±0.2

0.5

±0.15

Rating

60±10

Unit

C 1.5

±0.5

1: Emitter

2: Base

3: Collector

4: Base

5: Collector

1 2 3 4 5 6 7 8 9 10

6: Base

7: Collector

8: Base

9: Collector

10: Emitter

SIP10-A1 Package

2.54 = 22.86

±0.25

3.5

150

°C

−55

+150

Conditions

Min

Typ

Max

Unit

µA



5 mA, I

50 V, I

5 V, I

100

4 V, I

1 A

4 V, I

2 A

2 A, I

8 mA

2 A, I

8 mA

2 A

1 000

10 000

2.5

10 V, I

0.5 A, f

1 MHz

8 mA, I

= −8

50 V

MHz

µs

0.4

stg

3.0

1.0

s/b

0.71 A, L

100 mH, R

100

Ω

Note) The part numbers in the parenthesis show conventional part number.

SJK00066AED

Request for your special attention and precautions in using the technical information and

semiconductors described in this book

(1)

If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

regulations of the exporting country, especially, those with regard to security export control, must be observed.

(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples

of the products, and no license is granted under any intellectual property right or other right owned by our company or any other

company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other

company which may arise as a result of the use of technical information described in this book.

(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office

equipment, communications equipment, measuring instruments and household appliances).

Consult our sales staff in advance for information on the following applications:

–

Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support

systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-

ucts may directly jeopardize life or harm the human body.

–

Any applications other than the standard applications intended.

(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-

provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product

Standards in advance to make sure that the latest specifications satisfy your requirements.

(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions

(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute

maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any

defect which may arise later in your equipment.

Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure

mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire

or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.

(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,

thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which

damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.

(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita

Electric Industrial Co., Ltd.

PUB4423P相似产品对比

	PUB4423P	PUB4423	PUB4423Q	PU4423	PU4423Q	PU4423P
描述	Power Bipolar Transistor, 2A I(C), 70V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, 10 Pin, SIP-10	Power Bipolar Transistor, 2A I(C), 70V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, 10 Pin, SIP-10	Power Bipolar Transistor, 2A I(C), 70V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, 10 Pin, SIP-10	Power Bipolar Transistor, 2A I(C), 70V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, 10 Pin, SIP-10	Power Bipolar Transistor, 2A I(C), 70V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, 10 Pin, SIP-10	Power Bipolar Transistor, 2A I(C), 70V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, 10 Pin, SIP-10
零件包装代码	SIP	SIP	SIP	SIP	SIP	SIP
包装说明	IN-LINE, R-PSIP-T10	SIP-10	SIP-10	IN-LINE, R-PSIP-T10	IN-LINE, R-PSIP-T10	IN-LINE, R-PSIP-T10
针数	10	10	10	10	10	10
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
最大集电极电流 (IC)	2 A	2 A	2 A	2 A	2 A	2 A
集电极-发射极最大电压	70 V	70 V	70 V	70 V	70 V	70 V
配置	2 BANKS, COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR	2 BANKS, COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR	2 BANKS, COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR	2 BANKS, COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR	2 BANKS, COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR	2 BANKS, COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE)	2000	1000	1000	1000	1000	2000
JESD-30 代码	R-PSIP-T10	R-PSIP-T10	R-PSIP-T10	R-PSIP-T10	R-PSIP-T10	R-PSIP-T10
元件数量	4	4	4	4	4	4
端子数量	10	10	10	10	10	10
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE
极性/信道类型	NPN	NPN	NPN	NPN	NPN	NPN
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	NO	NO	NO	NO	NO	NO
端子形式	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
端子位置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
标称过渡频率 (fT)	20 MHz	20 MHz	20 MHz	20 MHz	20 MHz	20 MHz

PUB4423P

PUB4423P概述

PUB4423P规格参数

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