Datasheet> 器件分类 > 分立半导体> 晶体管> PUA3123P

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PUA3123P: 产品描述Power Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 3-Element, NPN, Silicon, Plastic/Epoxy, 8 Pin, SIP-8; 产品类别分立半导体晶体管; 文件大小86KB，共3页; 制造商Panasonic(松下); 官网地址http://www.panasonic.co.jp/semicon/e-index.html

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PUA3123P概述

Power Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 3-Element, NPN, Silicon, Plastic/Epoxy, 8 Pin, SIP-8

PUA3123P规格参数

参数名称	属性值
零件包装代码	SIP
包装说明	IN-LINE, R-PSIP-T8
针数	8
Reach Compliance Code	unknown
ECCN代码	EAR99
最大集电极电流 (IC)	2 A
集电极-发射极最大电压	50 V
配置	COMPLEX
最小直流电流增益 (hFE)	2000
JESD-30 代码	R-PSIP-T8
元件数量	3
端子数量	8
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	IN-LINE
极性/信道类型	NPN
认证状态	Not Qualified
表面贴装	NO
端子形式	THROUGH-HOLE
端子位置	SINGLE
晶体管应用	SWITCHING
晶体管元件材料	SILICON
标称过渡频率 (fT)	20 MHz
Base Number Matches	1

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Power Transistor Arrays

PUA3123

(PU3123)

Silicon NPN triple diffusion planar type darlington

For power amplification

■

Features

•

Built-in zener diode (60 V) between collector and base

•

Small variation in withstand pressure

•

Large energy handling capability

•

High-speed switching

•

NPN 3 elements

9.5

±0.2

1.65

±0.2

8.0

±0.2

20.2

±0.3

Unit: mm

4.0

±0.2

0.8

±0.25

Solder Dip

5.3

±0.5

4.4

±0.5

0.5

±0.15

1.0

±0.25

2.54

±0.2

2.57 = 17.78

±0.25

C 1.5

±0.5

■

Absolute Maximum Ratings

25°C

Parameter

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

Collector current

Peak collector current

Collector power dissipation

25°C

Junction temperature

Storage temperature

stg

Symbol

CBO

CEO

EBO

Rating

60±10

2.4

150

−55

+150

°C

Unit

0.5

±0.15

1: Emitter

2: Base

3: Collector

1 2 3 4 5 6 7 8

4: Base

5: Collector

6: Base

7: Collector

8: Emitter

SIP8-A1 Package

■

Electrical Characteristics

25°C

3°C

Parameter

Collector-emitter voltage (Base open)

Collector-base cutoff current (Emitter open)

Emitter-base cutoff current (Collector open)

Forward current transfer ratio

Symbol

CEO

CBO

EBO

FE1

FE2 *1

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Turn-on time

Storage time

Fall time

Energy handling capability

CE(sat)

BE(sat)

stg

s/b

Conditions

5 mA, I

50 V, I

5 V, I

4 V, I

1 A

4 V, I

2 A

2 A, I

8 mA

2 A, I

8 mA

10 V, I

0.5 A, f

1 MHz

2 A

8 mA, I

= −8

50 V

0.71 A, L

100 mH, R

100

Ω

0.4

3.0

1.0

1 000

10 000

2.5

MHz

µs

Min

Typ

Max

100

Unit

µA



Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *1: Rank classification

*2: E

s/b

test circuit

Mercury relay

Rank

Free

1 000 to 10 000 2 000 to 10 000 1 000 to 5 000

Note) The part number in the parenthesis shows conventional part number.

Publication date: March 2004

SJK00013AED

Request for your special attention and precautions in using the technical information

and semiconductors described in this material

(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of

the products or technical information described in this material and controlled under the "Foreign Exchange

and Foreign Trade Law" is to be exported or taken out of Japan.

(2) The technical information described in this material is limited to showing representative characteristics and

applied circuits examples of the products. It neither warrants non-infringement of intellectual property right

or any other rights owned by our company or a third party, nor grants any license.

(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical

information as described in this material.

(4) The products described in this material are intended to be used for standard applications or general elec-

tronic equipment (such as office equipment, communications equipment, measuring instruments and house-

hold appliances).

Consult our sales staff in advance for information on the following applications:

•

Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-

tion equipment, life support systems and safety devices) in which exceptional quality and reliability are

required, or if the failure or malfunction of the products may directly jeopardize life or harm the human

body.

•

Any applications other than the standard applications intended.

(5) The products and product specifications described in this material are subject to change without notice for

modification and/or improvement. At the final stage of your design, purchasing, or use of the products,

therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica-

tions satisfy your requirements.

(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-

ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not

be liable for any defect which may arise later in your equipment.

Even when the products are used within the guaranteed values, take into the consideration of incidence of

break down and failure mode, possible to occur to semiconductor products. Measures on the systems such

as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent

physical injury, fire, social damages, for example, by using the products.

(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life

and amount of time let standing of unsealed items) agreed upon when specification sheets are individually

exchanged.

(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written

permission of Matsushita Electric Industrial Co., Ltd.

2003 SEP

PUA3123P相似产品对比

	PUA3123P	PUA3123	PU3123	PU3123Q	PU3123P	PUA3123Q
描述	Power Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 3-Element, NPN, Silicon, Plastic/Epoxy, 8 Pin, SIP-8	Power Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 3-Element, NPN, Silicon, Plastic/Epoxy, 8 Pin, SIP-8	Power Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 3-Element, NPN, Silicon, Plastic/Epoxy, 8 Pin, SIP-8	Power Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 3-Element, NPN, Silicon, Plastic/Epoxy, 8 Pin, SIP-8	Power Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 3-Element, NPN, Silicon, Plastic/Epoxy, 8 Pin, SIP-8	Power Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 3-Element, NPN, Silicon, Plastic/Epoxy, 8 Pin, SIP-8
零件包装代码	SIP	SIP	SIP	SIP	SIP	SIP
包装说明	IN-LINE, R-PSIP-T8	SIP-8	IN-LINE, R-PSIP-T8	IN-LINE, R-PSIP-T8	IN-LINE, R-PSIP-T8	SIP-8
针数	8	8	8	8	8	8
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
最大集电极电流 (IC)	2 A	2 A	2 A	2 A	2 A	2 A
集电极-发射极最大电压	50 V	50 V	50 V	50 V	50 V	50 V
配置	COMPLEX	COMPLEX	COMPLEX	COMPLEX	COMPLEX	COMPLEX
最小直流电流增益 (hFE)	2000	1000	1000	1000	2000	1000
JESD-30 代码	R-PSIP-T8	R-PSIP-T8	R-PSIP-T8	R-PSIP-T8	R-PSIP-T8	R-PSIP-T8
元件数量	3	3	3	3	3	3
端子数量	8	8	8	8	8	8
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE
极性/信道类型	NPN	NPN	NPN	NPN	NPN	NPN
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	NO	NO	NO	NO	NO	NO
端子形式	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
端子位置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
标称过渡频率 (fT)	20 MHz	20 MHz	20 MHz	20 MHz	20 MHz	20 MHz
厂商名称	-	-	Panasonic(松下)	Panasonic(松下)	Panasonic(松下)	Panasonic(松下)

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器件捷径: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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